FDP036N0A Search Results
FDP036N0A Datasheets Context Search
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FDP036N10A
Abstract: fdp036n10 FDP036N0A 47w marking fdp036
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FDP036N10A O-220AB FDP036N10A fdp036n10 FDP036N0A 47w marking fdp036 | |
fdp036n10aContextual Info: FDP036N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.6 mΩ Features Description • RDS on = 3.2 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching |
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FDP036N10A FDP036N10A | |
FDP036N0A
Abstract: FDP036N10A
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Original |
FDP036N10A O-220AB FDP036N0A FDP036N10A | |
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Contextual Info: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 214A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDP036N10A FDP036N10A O-220AB | |
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Contextual Info: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 214A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
Original |
FDP036N10A O-220AB |