FDP036N10A
Abstract: fdp036n10 FDP036N0A 47w marking fdp036
Text: FDP036N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.6mW Features Description • RDS on = 3.2mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDP036N10A
O-220AB
FDP036N10A
fdp036n10
FDP036N0A
47w marking
fdp036
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fdp036n10a
Abstract: No abstract text available
Text: FDP036N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.6 mΩ Features Description • RDS on = 3.2 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching
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FDP036N10A
FDP036N10A
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FDP036N0A
Abstract: FDP036N10A
Text: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 176A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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Original
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FDP036N10A
O-220AB
FDP036N0A
FDP036N10A
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Untitled
Abstract: No abstract text available
Text: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 214A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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Original
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FDP036N10A
FDP036N10A
O-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 214A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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Original
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FDP036N10A
O-220AB
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PDF
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