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onsemi FDG6301N MOSFET 2N-CH 25V 0.22A SC88
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDG6301N	Digi-Reel	58,114		1	1 $0.68 10 $0.423 100 $0.68 1000 $0.18521 10000 $0.18521	Buy Now
	FDG6301N	Cut Tape	58,114		1	1 $0.68 10 $0.423 100 $0.68 1000 $0.18521 10000 $0.18521	Buy Now
	FDG6301N	Reel	57,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15834	Buy Now
Avnet Americas	FDG6301N	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	FDG6301N	Reel			6,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	FDG6301N	Reel			6,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	FDG6301N	Reel			6,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	FDG6301N		20,071			1 $0.57 10 $0.403 100 $0.265 1000 $0.178 10000 $0.123	Buy Now
Verical	FDG6301N		12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1401	Buy Now
	FDG6301N		9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1218	Buy Now
Arrow Electronics	FDG6301N		9,000	10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.1218	Buy Now

Newark	FDG6301N	Cut Tape	1,701		5	1 $0.437 10 $0.371 100 $0.258 1000 $0.164 10000 $0.164	Buy Now
	FDG6301N	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.133	Buy Now
Onlinecomponents.com	FDG6301N		12,000			1 - 10 - 100 - 1000 - 10000 $0.1078	Buy Now
TME	FDG6301N		573		1	1 $0.374 10 $0.312 100 $0.239 1000 $0.16 10000 $0.148	Buy Now
Richardson RFPD	FDG6301N				6,000	1 - 10 - 100 - 1000 - 10000 $0.12	Buy Now
Avnet Asia	FDG6301N			10 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDG6301N			11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FDG6301N			11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FDG6301N		600			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	FDG6301N		12,000			1 - 10 - 100 - 1000 - 10000 $0.1078	Buy Now
Wuhan P&S	FDG6301N		1,942		1	1 $0.3291 10 $0.3291 100 $0.2101 1000 $0.1593 10000 $0.1593	Buy Now
onsemi FDG6301N-F085 MOSFET 2N-CH 25V 0.22A SC88
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDG6301N-F085	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	FDG6301N-F085	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	FDG6301N-F085		1,491		1	1 $0.1065 10 $0.1065 100 $0.1001 1000 $0.0905 10000 $0.0905	Buy Now
TME	FDG6301N-F085				3	1 - 10 $0.248 100 $0.165 1000 $0.149 10000 $0.138	Get Quote
onsemi FDG6301N_D87Z MOSFET 2N-CH 25V 0.22A SC88
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDG6301N_D87Z	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.11595	Buy Now
onsemi FDG6301N-F085P MOSFET 2N-CH 25V 0.22A SC70-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDG6301N-F085P	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	FDG6301N-F085P		264,295		1	1 $0.1344 10 $0.1344 100 $0.1263 1000 $0.1142 10000 $0.1142	Buy Now
Flip Electronics	FDG6301N-F085P		600			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Aptina Imaging FDG6301N_F085P Trans MOSFET N-CH 25V 0.22A Automotive 6-Pin SC-70 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	FDG6301N_F085P		207,295		2,627	1 - 10 - 100 - 1000 - 10000 $0.1428	Buy Now
	FDG6301N_F085P		51,000		2,627	1 - 10 - 100 - 1000 - 10000 $0.1428	Buy Now
	FDG6301N_F085P		3,000		2,627	1 - 10 - 100 - 1000 - 10000 $0.1428	Buy Now
	FDG6301N_F085P		3,000		2,627	1 - 10 - 100 - 1000 - 10000 $0.1428	Buy Now

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FDG6301 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
FDG6301N	Fairchild Semiconductor	Dual N-Channel, Digital FET	Original	PDF
FDG6301N	Fairchild Semiconductor	Dual N-Channel, Digital FET	Original	PDF
FDG6301N	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
FDG6301N	Fairchild Semiconductor	Dual N-Channel, Digital FET	Scan	PDF
FDG6301N	Fairchild Semiconductor	Dual N-Channel, Digital FET	Scan	PDF
FDG6301N_D87Z	Fairchild Semiconductor	Transistor Mosfet N-CH 25V 0.22A 6SC-70 T/R	Original	PDF
FDG6301N_F085	Fairchild Semiconductor	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 25V 220MA SC70-6	Original	PDF
FDG6301N-F085	ON Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 25V 0.22A SC70-6	Original	PDF
FDG6301N-F085P	ON Semiconductor	Uncategorized - Miscellaneous - DUAL NMOS SC70-6 25V 4OHM	Original	PDF
FDG6301N_NL	Fairchild Semiconductor	Dual N-Channel Digital FET	Original	PDF

FDG6301 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: November 1998 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to	Original	PDF	FDG6301N
ultra FAST DMOS FET Switches Abstract: FDG6301N SC70-6 Text: FDG6301N_F085 Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. RDS ON = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's	Original	PDF	FDG6301N ultra FAST DMOS FET Switches SC70-6
F63TNR Abstract: FDG6301N FDG6302P SC70-6 CBVK741B019 Text: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to	Original	PDF	FDG6301N F63TNR FDG6301N FDG6302P SC70-6 CBVK741B019
ZENER SINGLE COLOR CODE Abstract: CBVK741B019 F63TNR FDG6301N FDG6302P SC70-6 Text: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to	Original	PDF	FDG6301N ZENER SINGLE COLOR CODE CBVK741B019 F63TNR FDG6301N FDG6302P SC70-6
FDG6301N Abstract: SC70-6 Text: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to	Original	PDF	FDG6301N FDG6301N SC70-6
Untitled Abstract: No abstract text available Text: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to	Original	PDF	FDG6301N
Untitled Abstract: No abstract text available Text: FDG6301N_F085 Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. RDS ON = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's	Original	PDF	FDG6301N
Common rail piezo injector driver Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201 Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or	Original	PDF
OPA2333-HT Abstract: SBOS483C OPA2333 OPA2333SJD Amplifier k thermocouple texas Text: OPA2333-HT www.ti.com SBOS483C – JULY 2009 – REVISED DECEMBER 2010 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES Check for Samples: OPA2333-HT FEATURES 1 • • • • • • Low Offset Voltage: 26 mV Max 0.01-Hz to 10-Hz Noise: 1.5 mVPP	Original	PDF	OPA2333-HT SBOS483C 01-Hz 10-Hz C/210 OPA2333-HT SBOS483C OPA2333 OPA2333SJD Amplifier k thermocouple texas
Untitled Abstract: No abstract text available Text: BurrĆBrown Products from Texas Instruments OPA333 OPA2333 SBOS351C – MARCH 2006 – REVISED MAY 2007 1.8V, microPOWER CMOS OPERATIONAL AMPLIFIERS Zerø-Drift Series FEATURES • • • • • • • • DESCRIPTION LOW OFFSET VOLTAGE: 10 V max ZERO DRIFT: 0.05μV/°C (max)	Original	PDF	OPA333 OPA2333 SBOS351C OPA333
Untitled Abstract: No abstract text available Text: OPA369 OPA2369 BurrĆBrown Products from Texas Instruments SBOS414A – AUGUST 2007 – REVISED SEPTEMBER 2007 1.8V, 1 A max, Zerø-Crossover RAIL-TO-RAIL I/O OPERATIONAL AMPLIFIER FEATURES DESCRIPTION 1 • • • • • • 2 ZERØ-CROSSOVER LOW POWER: 1μA max	Original	PDF	OPA369 OPA2369 SBOS414A SC70-5, OT23-8, OPA369 OPA2369 OPAx369
INA321A Abstract: No abstract text available Text: OPA2333A-Q1 www.ti.com. SBOS463 – DECEMBER 2008 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER	Original	PDF	OPA2333A-Q1 SBOS463 01-Hz 10-Hz INA321A
02333Q Abstract: INA321A OPA2333 OPA2333AQDRQ1 REF3140 SBOS463A Text: OPA2333-Q1 www.ti.com SBOS463A – DECEMBER 2008 – REVISED JUNE 2010 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES Check for Samples: OPA2333-Q1 FEATURES 1 • • • • • • • D OR DGK PACKAGE TOP VIEW Qualified for Automotive Applications	Original	PDF	OPA2333-Q1 SBOS463A 01-Hz 10-Hz 500nV/div 02333Q INA321A OPA2333 OPA2333AQDRQ1 REF3140 SBOS463A
Backing Up Epson Toyocom Real-Time Clock Chips Abstract: No abstract text available Text: AN-1006 Application Note Backing Up Epson Toyocom Real-Time Clock Chips A Demonstration Tool for Cymbet EnerChip™ Solid State Thin Film Rechargeable Batteries is fully charged. At full charge, the current is in the sub-nanoamps. A simple but effective technique prevents the battery from discharging	Original	PDF	AN-1006 RTC-8564 MMBT5087LT1G FDG6301N FDG6304P CBC050 CBC012 ZR40401F41TA Backing Up Epson Toyocom Real-Time Clock Chips

smd diode Mbr0540 Abstract: CMD17-21VGC/TR8 4301 SMD TRANSISTOR SG 21 DIODE SMD smd transistor 2p data SSQ-105-02-T-D-RA Caplugs VC-234-8 Oscilloscope USB 100mhz Schematic APXA160ARA331MJC Text: Application Note 1493 ZL6100EVAL1Z Evaluation Board The ZL6100 is an integrated mixed-signal power conversion and management IC that combines an efficient step-down DC/DC converter with key power and thermal management functions in a single package. The ZL6100 incorporates current sharing and adaptive	Original	PDF	ZL6100EVAL1Z ZL6100 AN1493 smd diode Mbr0540 CMD17-21VGC/TR8 4301 SMD TRANSISTOR SG 21 DIODE SMD smd transistor 2p data SSQ-105-02-T-D-RA Caplugs VC-234-8 Oscilloscope USB 100mhz Schematic APXA160ARA331MJC
Inventec VAIL 2.0 Abstract: PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001 Text: DAVOS-DF PV-1-BUILD 2004.11.04 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : DAVOS-DF SIZE CODE A3 CS SHEET DOC. NUMBER REV PC9603 1 A01 OF 65 TABLE OF CONTENTS	Original	PDF	PC9603 OTS144058 10/27---update Inventec VAIL 2.0 PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001
RT9713 Abstract: C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU Text: VAIL SI2-BUILD-FINAL 2004.08.31 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : VAIL1.0 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX2 67 TABLE OF CONTENTS	Original	PDF	V/5V/12V) 31-Aug-2004 CN6035 RT9713 C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU
c5586 Abstract: c5679 C5694 c5487 47N253 c5664 c5598 c5717 C5488 ez 4r 823 Text: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-10 - ODEM 11-14 - DDR 15-18 - ATI_M10_P 19-20 - VGA DDR 21 -LCD&TV CONNECTOR INTERFACE 22- CRT INTERFACE 23-25- ICH4-M	Original	PDF	16-Jun-2004 QC5420 R1388 C5704 LP2996MRX 6-May-2004 c5586 c5679 C5694 c5487 47N253 c5664 c5598 c5717 C5488 ez 4r 823
C5478 Abstract: dd5011 C5088 c5468 c5470 c5388 C5480 c5344 C5386 Inventec Text: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-12 - MONTARA-GM 13-16 - DDR 17 - TV ENCODER 18 - CRT 19 - LVDS 21-23- ICH4-M 24 - HDD CONNECTOR 25 - CD-ROM CONNECTOR	Original	PDF	C5332 MCH66 RVSD10 RVSD11 PIN90X55 PAD506 FC8496 C5478 dd5011 C5088 c5468 c5470 c5388 C5480 c5344 C5386 Inventec
12c675 Abstract: 8541P Inventec tpa6017 sc1470I LPC47N249 *8541p L1019 R502 3443 070435FR015 Text: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-10 - ODEM 11-14 - DDR 15-18 - ATI_M10_P 19-20 - VGA DDR 21 -LCD INTERFACE 22-24- ICH4-M 25 - HDD CONNECTOR 26 - CD-ROM CONNECTOR	Original	PDF	BLM11A121S C2507 C2505 R2502 R2509 127107MH020G200ZT FIX2501 FIX2502 FIX2500 S2501 12c675 8541P Inventec tpa6017 sc1470I LPC47N249 *8541p L1019 R502 3443 070435FR015
Untitled Abstract: No abstract text available Text: BurrĆBrown Products from Texas Instruments OPA333 OPA2333 SBOS351C – MARCH 2006 – REVISED MAY 2007 1.8V, microPOWER CMOS OPERATIONAL AMPLIFIERS Zerø-Drift Series FEATURES • • • • • • • • DESCRIPTION LOW OFFSET VOLTAGE: 10 V max ZERO DRIFT: 0.05μV/°C (max)	Original	PDF	OPA333 OPA2333 SBOS351C
Untitled Abstract: No abstract text available Text: F A IR C H IL D July 1999 SEM IC O N D U C TO R tm FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This	OCR Scan	PDF	FDG6301N SC70-6 SC70-6
Marking Code m sc70-6 Abstract: jedec SC-70-6 package SC70-6 SPI SC70-6 Marking Code m sc70-6 25 fdg6301n F63TNR bs sc70 Marking Code m sc70-6 .25 bb sc70-6 Text: July 1999 F = / \ IR G H Il_ D S E M IC O N D U C T O R tm FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This	OCR Scan	PDF	FDG6301N 34bTb SC70-6 331-ryp SC-70, Marking Code m sc70-6 jedec SC-70-6 package SC70-6 SPI SC70-6 Marking Code m sc70-6 25 fdg6301n F63TNR bs sc70 Marking Code m sc70-6 .25 bb sc70-6
A9 SOT-23 Abstract: zener sot-23 a9 CBVK741B019 F63TNR FDG6301N SC70-6 land pattern sc70-6 Text: November 1998 FAIRCHILD S E M IC O N D U C T O R tm FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This	OCR Scan	PDF	FDG6301N SC70-6 SC70-6 A9 SOT-23 zener sot-23 a9 CBVK741B019 F63TNR FDG6301N land pattern sc70-6

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FDG6301 Price and Stock

onsemi FDG6301N

onsemi FDG6301N-F085

onsemi FDG6301N_D87Z

onsemi FDG6301N-F085P

Aptina Imaging FDG6301N_F085P

FDG6301 Datasheets (10)

FDG6301 Datasheets Context Search

Untitled

ultra FAST DMOS FET Switches

F63TNR

ZENER SINGLE COLOR CODE

FDG6301N

Untitled

Untitled

Common rail piezo injector driver

OPA2333-HT

Untitled

Untitled

INA321A

02333Q

Backing Up Epson Toyocom Real-Time Clock Chips

smd diode Mbr0540

Inventec VAIL 2.0

RT9713

c5586

C5478

12c675

Untitled

Untitled

Marking Code m sc70-6

A9 SOT-23