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    MCH66 Price and Stock

    onsemi MCH6663-TL-H

    MOSFET N/P-CH 30V 1.8A 6MCPH
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    Rochester Electronics LLC MCH6626-TL-E

    MOSFET N/P-CH 20V 1.6A/1A 6MCPH
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    DigiKey MCH6626-TL-E Bulk 2,664
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    Rochester Electronics LLC MCH6605-TL-E

    MOSFET 2P-CH 50V 0.14A 6MCPH
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    DigiKey MCH6605-TL-E Bulk 1,776
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    onsemi MCH6605-TL-E

    MOSFET 2P-CH 50V 0.14A 6MCPH
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    Rochester Electronics MCH6605-TL-E 48,000 1
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    Rochester Electronics LLC MCH6631-TL-E

    MOSFET N/P-CH
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    Find more MCH66 price and stock on Findchips.com

    MCH66 Datasheets (56)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCH6601 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    MCH6601-TL-E On Semiconductor MCH6601 - Small Signal MOSFET 30V 200mA 10.4 Ohm Dual P-Channel MCPH6 Original PDF
    MCH6602 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    MCH6602-TL-E On Semiconductor MCH6602 - Small Signal MOSFET 30V 0.35A 3.7 Ohm Dual N-Channel MCPH6 Original PDF
    MCH6603 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    MCH6603 Sanyo Semiconductor Transistor Selectio Guide (Short Specs) Scan PDF
    MCH6603-TL-H On Semiconductor MCH6603 - Small Signal MOSFET 50V 140mA 23 Ohm Dual P-Channel MCPH6 Original PDF
    MCH6604 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    MCH6604 Sanyo Semiconductor Transistor Selectio Guide (Short Specs) Scan PDF
    MCH6604-TL-E On Semiconductor MCH6604 - Small Signal MOSFET 50V 250mA 7.8 Ohm Dual N-Channel MCPH6 Original PDF
    MCH6605 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    MCH6605-TL-E ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 50V 0.14A MCPH6 Original PDF
    MCH6606 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    MCH6606 Sanyo Semiconductor Transistor Selectio Guide (Short Specs) Scan PDF
    MCH6607 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    MCH6608 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    MCH6609 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    MCH6609 Sanyo Semiconductor Transistor Selectio Guide (Short Specs) Scan PDF
    MCH6610 Sanyo Semiconductor N-Channel Silicon MOSFET Original PDF
    MCH6610 Sanyo Semiconductor Transistor Selectio Guide (Short Specs) Scan PDF

    MCH66 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8758B MCH6663 Power MOSFET http://onsemi.com 30V, 1.8A, 188mΩ, –30V, –1.5A, 325mΩ, Complementary Dual MCPH6 Features • • • • ON-resistance Nch : RDS on 1=145mΩ(typ.) Pch : RDS(on)1=250mΩ(typ.) 4V drive Halogen free compliance


    Original     		EN8758B MCH6663 PDF

    a1216 transistor

    Abstract: a1216 marking xa
    Text: MCH6649 Ordering number : ENA1216 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6649 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original     		MCH6649 ENA1216 PW10s, 900mm A1216-4/4 a1216 transistor a1216 marking xa PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2281 MCH6664 Advance Information http://onsemi.com P-Channel Power MOSFET –30V, –1.5A, 325mΩ, Dual MCPH6 Features • ON-resistance Pch : RDS on 1=250mW (typ.) • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		A2281 MCH6664 250mW 900mm2Ã A2281-5/5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*A2280 MCH6661 Advance Information http://onsemi.com N-Channel Power MOSFET 30V, 1.8A, 188mΩ, Dual MCPH6 Features • ON-resistance Nch : RDS on 1=145mW (typ.) • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		A2280 MCH6661 145mW 900mm2Ã A2280-5/5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8758A MCH6663 Power MOSFET http://onsemi.com 30V, 1.8A, 188mΩ, –30V, –1.5A, 325mΩ, Complementary Dual MCPH6 Features • • • • ON-resistance Nch : RDS on 1=145mΩ(typ.) Pch : RDS(on)1=250mΩ(typ.) 4V drive Halogen free compliance


    Original     		EN8758A MCH6663 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA2280A MCH6661 N-Channel Power MOSFET 30V, 1.8A, 188mΩ, Dual MCPH6 http://onsemi.com Features • ON-resistance Nch : RDS on 1=145mW (typ.) • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original     		ENA2280A MCH6661 145mW 900mm2Ã A2280-5/5 PDF

    TA-3264

    Abstract: ENN6973
    Text: Ordering number : ENN6973 MCH6618 N-Channel and P-Channel Silicon MOSFETs MCH6618 Ultrahigh-Speed Switching Applications unit : mm 2173A [MCH6618] 0.3 4 5 6 3 2 0.65 1 0.15 0.25 0.07 The MCH6618 encapsulates an N-channel MOSFET and a P-channel MOSFET that feature low


    Original     		ENN6973 MCH6618 MCH6618] MCH6618 TA-3264 ENN6973 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6612 Ordering number : EN7078A N-Channel Silicon MOSFET MCH6612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original     		MCH6612 EN7078A PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6607 Ordering number : EN7039A P-Channel Silicon MOSFET MCH6607 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original     		MCH6607 EN7039A 900mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6609 Ordering number : EN7041B P-Channel Silicon MOSFET MCH6609 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original     		MCH6609 EN7041B 900mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6613 Ordering number : EN6920A SANYO Semiconductors DATA SHEET MCH6613 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low


    Original     		EN6920A MCH6613 MCH6613 900mm2information PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6613 Ordering number : EN6920B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6613 General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low


    Original     		EN6920B MCH6613 MCH6613 PW10s, 900movement, PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6605 Ordering number : EN6460C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6605 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 4V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting


    Original     		EN6460C MCH6605 PW10s, 900mm2 PDF

    MCH6630

    Abstract: No abstract text available
    Text: MCH6630 Ordering number : ENN8240 N-Channel Silicon MOSFET MCH6630 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High resistance to damage from ESD TYP 300V . [with a protection diode connected between the gate and source]


    Original     		MCH6630 ENN8240 MCH6630 PDF

    A1216

    Abstract: MOS12
    Text: MCH6649 注文コード No. N A 1 2 1 6 三洋半導体データシート N MCH6649 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・1.5V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


    Original     		MCH6649 900mm2 100mA 100mA, --800mA PW10s --200mA IT11706 900mm2 A1216 MOS12 PDF

    A1018

    Abstract: IT10824 A10183
    Text: MCH6652 注文コード No. N A 1 0 1 8 三洋半導体データシート N MCH6652 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。


    Original     		MCH6652 900mm2 150mA 150mA, 300mA IT10829 900mm2 IT13196 A1018 IT10824 A10183 PDF

    MCH6607

    Abstract: No abstract text available
    Text: Ordering number : ENN7039 MCH6607 P-Channel Silicon MOSFET MCH6607 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single


    Original     		ENN7039 MCH6607 MCH6607] MCH6607 PDF

    MCH6616

    Abstract: TA-3262
    Text: Ordering number : ENN7013 MCH6616 N-Channel Silicon MOSFET MCH6616 Ultrahigh-Speed Switching Applications • • • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original     		ENN7013 MCH6616 MCH6616] MCH6616 TA-3262 PDF

    MCH6606

    Abstract: No abstract text available
    Text: Ordering number:ENN6461 N-Channel Silicon MOSFET MCH6606 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2173 [MCH6606] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 • Low ON resistance. · Ultrahigh-speed swithcing. · 4V drive. · Composite type with 2 MOSFETs contained in one


    Original     		ENN6461 MCH6606 MCH6606] MCH6606 PDF

    MCH6609

    Abstract: No abstract text available
    Text: Ordering number : ENN7041 MCH6609 P-Channel Silicon MOSFET MCH6609 Ultrahigh-Speed Switching Applications Preliminary • 0.25 2.1 • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive. Composite type with 2 MOSFETs contained in a single


    Original     		ENN7041 MCH6609 MCH6609] MCH6609 PDF

    MCH6602

    Abstract: ER 2509
    Text: Ordering number:ENN6445 N-Channel Silicon MOSFET MCH6602 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2173 [MCH6602] 0.3 5 2 3 0.65 0.25 1 0.15 4 1.6 6 2.1 • Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one


    Original     		ENN6445 MCH6602 MCH6602] MCH6602 ER 2509 PDF

    MCH6635

    Abstract: No abstract text available
    Text: MCH6635 注文コード No. N 8 2 1 7 A 三洋半導体データシート 半導体ニューズ No.N8217 をさしかえてください。 MCH6635 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長


    Original     		MCH6635 N8217 900mm2 400mA 400mA, 200mA, 900mm2 IT09190 IT09191 MCH6635 PDF

    MCH6632

    Abstract: No abstract text available
    Text: MCH6632 Ordering number : ENN7711 N-Channel and P-Channel Silicon MOSFETs MCH6632 General-Purpose Switching Device Applications Features • • • The MCH6632 in corporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.


    Original     		MCH6632 ENN7711 MCH6632 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6795 N-Channel and P-Channel Silicon MOSFET MCH6614 SAÜYO Ultrahigh-Speed Switching Applications Features Package Dimensions • The M CH 6614 incorporates two elements that are an N-channel and a P-channel M O SF E T s that feature low


    OCR Scan     		ENN6795 MCH6614 MCH6614] PDF