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    FDG6302P Search Results

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    FDG6302P Price and Stock

    Rochester Electronics LLC FDG6302P

    MOSFET 2P-CH 25V 0.14A SC88
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    DigiKey FDG6302P Bulk 257,483 1,211
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    onsemi FDG6302P

    MOSFET 2P-CH 25V 0.14A SC88
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    DigiKey FDG6302P Reel
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    FAIRCHILD FDG6302P

    Trans MOSFET P-CH 25V 0.14A 6-Pin SC-70 T/R
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    Verical FDG6302P 170,870 1,481
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    FDG6302P 57,000 1,481
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    FDG6302P 24,000 1,481
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    FDG6302P 2,900 1,481
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    Fairchild Semiconductor Corporation FDG6302P

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    Bristol Electronics FDG6302P 38,620 9
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    FDG6302P 3,970 9
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    Quest Components FDG6302P 30,896
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    FDG6302P 3,176
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    FDG6302P 3,126
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    Rochester Electronics FDG6302P 257,483 1
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    Velocity Electronics FDG6302P 786
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    FDG6302P Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDG6302P Fairchild Semiconductor Dual P-Channel, Digital FET Original PDF
    FDG6302P Fairchild Semiconductor Dual P-Channel, Digital FET Original PDF
    FDG6302P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDG6302P Fairchild Semiconductor Dual P-Channel, Digital FET Scan PDF
    FDG6302P Fairchild Semiconductor Dual P-Channel, Digital FET Scan PDF
    FDG6302P Fairchild Semiconductor Dual P-Channel, Digital FET Scan PDF
    FDG6302P_NL Fairchild Semiconductor Dual P-Channel Digital FET Original PDF

    FDG6302P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDG6302P

    Abstract: SC70-6 Fairchild Semiconductor - Process
    Text: July 1999 FDG6302P Dual P-Channel, Digital FET General Description Features -25 V, -0.14 A continuous, -0.4 A peak. RDS ON = 10 Ω @ VGS= -4.5 V, RDS(ON) = 13 Ω @ VGS= -2.7 V. These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's


    Original     		FDG6302P FDG6302P SC70-6 Fairchild Semiconductor - Process PDF

    land pattern sc70-6

    Abstract: SC70-6 CBVK741B019 F63TNR FDG6302P T-23
    Text: November 1998 FAIRCHILD S E M IC O N D U C T O R tm FDG6302P Dual P-Channel, Digital FET G eneral D escription Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan     		FDG6302P SC70-6 SC70-6 land pattern sc70-6 CBVK741B019 F63TNR FDG6302P T-23 PDF

    CBVK741B019

    Abstract: F63TNR FDG6302P SC70-6
    Text: July 1999 FDG6302P Dual P-Channel, Digital FET General Description Features -25 V, -0.14 A continuous, -0.4 A peak. RDS ON = 10 Ω @ VGS= -4.5 V, RDS(ON) = 13 Ω @ VGS= -2.7 V. These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's


    Original     		FDG6302P CBVK741B019 F63TNR FDG6302P SC70-6 PDF

    Small Signal MOSFETs

    Abstract: No abstract text available
    Text: November 1998 FDG6302P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    Original     		FDG6302P Small Signal MOSFETs PDF

    Untitled

    Abstract: No abstract text available
    Text: g A IR C H IL D Ju|y 1999 SEM IC O N D U C TO R tm FDG6302P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    OCR Scan     		FDG6302P FDG6302P 3Mbcib74 PDF

    CBVK741B019

    Abstract: F63TNR FDG6302P SC70-6
    Text: July 1999 FDG6302P Dual P-Channel, Digital FET General Description Features -25 V, -0.14 A continuous, -0.4 A peak. RDS ON = 10 Ω @ VGS= -4.5 V, RDS(ON) = 13 Ω @ VGS= -2.7 V. These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's


    Original     		FDG6302P CBVK741B019 F63TNR FDG6302P SC70-6 PDF

    LS025

    Abstract: ci 415A FDG6302P SC70-6
    Text: July 1999 F = A IR O H II_ D SEMICONDUCTOR tm FDG6302P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    OCR Scan     		FDG6302P SC70-6 OT-23 FDG6302P LS025 ci 415A SC70-6 PDF

    PART NUMBER MARKING SC70-6

    Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
    Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching


    Original     		FFB3946 SC70-6 2N3904 2N3906 PART NUMBER MARKING SC70-6 pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70 PDF

    CBVK741B019

    Abstract: F63TNR FDG6302P FFB3906 FMB3906 MMPQ3906 SC70-6 SOIC-16 4977 gm
    Text: E2 MMPQ3906 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .2A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.


    Original     		MMPQ3906 SC70-6 SOIC-16 FFB3906 FMB3906 FMB3906 FFB3906 CBVK741B019 F63TNR FDG6302P MMPQ3906 SC70-6 SOIC-16 4977 gm PDF

    Marking Code m sc70-6

    Abstract: PART NUMBER MARKING SC70-6 FDG6331L 125OC AN1030 CBVK741B019 F63TNR FDG6302P SC70-6
    Text: FDG6331L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel


    Original     		FDG6331L SC70-6 SC70-6opment. Marking Code m sc70-6 PART NUMBER MARKING SC70-6 FDG6331L 125OC AN1030 CBVK741B019 F63TNR FDG6302P PDF

    SC70-6 SSOT6

    Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
    Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and


    Original     		SC70-6 FFB2227A FMB2227A FFB2227A FFB2222A FFB2907A SC70-6 SSOT6 SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2907A PDF

    CBVK741B019

    Abstract: F63TNR FDG6302P FDG6308P SC70-6 marking code 04 sc70-6
    Text: FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.6 A, –20 V.


    Original     		FDG6308P SC70-6 SC70-6 CBVK741B019 F63TNR FDG6302P FDG6308P marking code 04 sc70-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDG316P P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior


    Original     		FDG316P SC70-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDG361N N-Channel 100V Specified PowerTrenchMOSFET General Description Features These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low


    Original     		FDG361N PDF

    CBVK741B019

    Abstract: F63TNR FDG311N FDG6302P SC70-6
    Text: FDG311N N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for


    Original     		FDG311N SC70-6 CBVK741B019 F63TNR FDG311N FDG6302P PDF

    CBVK741B019

    Abstract: F63TNR FDG327N FDG6302P SC70-6
    Text: FDG327N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use


    Original     		FDG327N CBVK741B019 F63TNR FDG327N FDG6302P SC70-6 PDF

    FSA642

    Abstract: FDMA1024NZ diagram circuit usb mp3 player with radio fm lcd CFL inverter circuit schematic diagram FAN5646 FDC610PZ block diagram 3x3 matrix keypad and microcontroller FDC658AP CFL 12v inverter circuit schematic diagram free pwm DC-DC SC70-5
    Text: PORTABLE SOLUTIONS w w w. f a i r c h i l d s e m i . c o m INTRODUCTION Fairchild Semiconductor provides complete portable design solutions to assist in your design challenges and accelerate time to market in the ever fast moving design cycle. We offer a large portfolio of leading-edge products


    Original     		PDF

    CFL inverter circuit schematic diagram

    Abstract: FDV301N SOT23 T7525 codec 7525 IGBT application note AN-9006 CFL 12v inverter circuit schematic diagram free DC 12V layout amplifier mp3 player usb diagram circuit usb mp3 player with radio fm lcd FPF2195 AN-7525
    Text: P O RTA B L E S O L U T I O N S FC-7319_Portable_Bro.indd 1 1/17/08 4:29:01 PM FC-7319_Portable_Bro.indd 2 1/17/08 4:29:29 PM INTRODUCTION Fairchild Semiconductor provides complete portable design solutions to assist in your design challenges and accelerate time to market in the ever fast moving design cycle. We offer a large portfolio of leading-edge products


    Original     		FC-7319 CFL inverter circuit schematic diagram FDV301N SOT23 T7525 codec 7525 IGBT application note AN-9006 CFL 12v inverter circuit schematic diagram free DC 12V layout amplifier mp3 player usb diagram circuit usb mp3 player with radio fm lcd FPF2195 AN-7525 PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    BC847S

    Abstract: CBVK741B019 F63TNR FDG6302P SC70-6
    Text: BC847S BC847S E2 B2 C1 C2 SC70-6 Mark: 1C B1 pin #1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier


    Original     		BC847S SC70-6 BC847S CBVK741B019 F63TNR FDG6302P SC70-6 PDF

    Marking Code m sc70-6

    Abstract: CBVK741B019 F63TNR FDG326P FDG6302P SC70-6
    Text: FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.5 A, –20 V.


    Original     		FDG326P SC70-6 SC70-6 Marking Code m sc70-6 CBVK741B019 F63TNR FDG326P FDG6302P PDF

    Untitled

    Abstract: No abstract text available
    Text: SC70-6 Tape and Reel Data SC70-6 Packaging Configuration: Figure 1.0 Packaging Description: Customized Label SC70-6 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


    Original     		SC70-6 177cm 330cm PDF