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    FAIRCHILD PT 100 Search Results

    FAIRCHILD PT 100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54ABT245/BRA Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801QRA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    74F403SPC Rochester Electronics LLC Replacement for Fairchild part number 74F403SPC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54F38/QCA Rochester Electronics LLC Replacement for Fairchild part number 54F38/BCA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    93425ADM/B Rochester Electronics LLC Replacement for Fairchild part number 93425ADMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54ABT245/B2A Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801Q2A. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    FAIRCHILD PT 100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SGF23N60UF 600 V PT IGBT General Description Features Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters where High Speed Switching is required feature. • • •


    Original     		PDF SGF23N60UF 220ns SGF23N60UF SGF23N60U

    Untitled

    Abstract: No abstract text available
    Text: SGH40N60UF 600 V PT IGBT General Description Features Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverter and PFC where high speed switching is required feature. • High Speed Switching


    Original     		PDF SGH40N60UF

    IGBT cross reference

    Abstract: AN9007 diode rectifier ebr IGBT SCHEMATIC IGBT tail time AN-9007 PP339 IGBT 2000 failure analysis IGBT IGBT failure
    Text: July, 2000 AN9007 High Performance 1200V PT IGBT with Improved Short-Circuit Immunity Chongman Yun, Sooseong Kim, Youngdae Kwon and Taehoon Kim Fairchild Semiconductor 82-3 Dodang-Dong, Wonmi-Ku, Buchon, Kyunggi-Do, KOREA Phone +82-32-680- 1325, Fax)+82-32-680- 1823, E-mail)cmyun@Fairchildsemi.co.kr


    Original     		PDF AN9007 IGBT cross reference AN9007 diode rectifier ebr IGBT SCHEMATIC IGBT tail time AN-9007 PP339 IGBT 2000 failure analysis IGBT IGBT failure

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		PDF JANSR2N7272 FRL130R4 1000K

    smps power circuit using ka3842

    Abstract: bobbin EER-3542 220V ferrite core transformer sec ka7912 EER3542D ic ka3842b ka3842 application circuits 2 mosfet forward converter cookbook 220v 300w ac regulator circuit KA3842B Schematic
    Text: Application Note 9015 July, 2000 A180W, 100KHz Forward Converter Using QFET by I.S. Yang Introduction The inherent performance advantage of power MOSFETs makes their use very attractive in switched mode power supplies. The fundamental advantage of the power MOSFET is the


    Original     		PDF A180W, 100KHz 100KHz, smps power circuit using ka3842 bobbin EER-3542 220V ferrite core transformer sec ka7912 EER3542D ic ka3842b ka3842 application circuits 2 mosfet forward converter cookbook 220v 300w ac regulator circuit KA3842B Schematic

    Untitled

    Abstract: No abstract text available
    Text: FGA30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as


    Original     		PDF FGA30N60LSD

    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot


    Original     		PDF FRF9150D, FRF9150R, FRF9150H -100V, O-254AA 1000K 3000K Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot


    Original     		PDF FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD

    2E12

    Abstract: FRX130D FRX130H FRX130R
    Text: FRX130D, FRX130R, FRX130H Radiation Hardened N-Channel Power MOSFETs April 1998 Features Description • 6A, 100V, rDS ON = 0.180Ω The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to


    Original     		PDF FRX130D, FRX130R, FRX130H 1000K 1E13n/cm2 1E14n/cm2 10lopment. 2E12 FRX130D FRX130H FRX130R

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 25A, 100V, rDS ON = 0.070Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		PDF JANSR2N7292 FRF150R4 1000K

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7298 Formerly FRF450R4 Data Sheet Radiation Hardened, N-Channel Power MOSFET The Fairchild has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as


    Original     		PDF JANSR2N7298 FRF450R4 1000K

    2E12

    Abstract: FRK9150D FRK9150H FRK9150R Rad Hard in Fairchild for MOSFET
    Text: FRK9150D, FRK9150R, FRK9150H 26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -100V, RDS on = 0.125Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK9150D, FRK9150R, FRK9150H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK9150D FRK9150H FRK9150R Rad Hard in Fairchild for MOSFET

    delta plc

    Abstract: 2E12 FRE160D FRE160H FRE160R Rad Hard in Fairchild for MOSFET
    Text: FRE160D, FRE160R, FRE160H 41A, 100V, 0.050 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 41A, 100V, RDS on = 0.050Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRE160D, FRE160R, FRE160H O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD delta plc 2E12 FRE160D FRE160H FRE160R Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FRM130D FRM130H FRM130R Rad Hard in Fairchild for MOSFET
    Text: FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 14A, 100V, RDS on = 0.180Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRM130D, FRM130R, FRM130H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRM130D FRM130H FRM130R Rad Hard in Fairchild for MOSFET

    1E14

    Abstract: 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7272 FRL130R4 1000K 1E14 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FRK160D FRK160H FRK160R Rad Hard in Fairchild for MOSFET
    Text: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK160D, FRK160R, FRK160H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK160D FRK160H FRK160R Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FRM9140D FRM9140H FRM9140R Rad Hard in Fairchild for MOSFET
    Text: FRM9140D, FRM9140R, FRM9140H 11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 11A, -100V, RDS on = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRM9140D, FRM9140R, FRM9140H -100V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRM9140D FRM9140H FRM9140R Rad Hard in Fairchild for MOSFET

    FRM9130R

    Abstract: 2E12 FRM9130D FRM9130H Rad Hard in Fairchild for MOSFET
    Text: FRM9130D, FRM9130R, FRM9130H 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 6A, -100V, RDS on = 0.550Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRM9130D, FRM9130R, FRM9130H -100V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD FRM9130R 2E12 FRM9130D FRM9130H Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FRM140D FRM140H FRM140R Rad Hard in Fairchild for MOSFET
    Text: FRM140D, FRM140R, FRM140H 23A, 100V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 100V, RDS on = 0.130Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRM140D, FRM140R, FRM140H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRM140D FRM140H FRM140R Rad Hard in Fairchild for MOSFET

    delta plc

    Abstract: 2E12 FRE9160D FRE9160H FRE9160R star delta plc Rad Hard in Fairchild for MOSFET FRE9160
    Text: FRE9160D, FRE9160R, FRE9160H 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 30A, -100V, RDS on = 0.095Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRE9160D, FRE9160R, FRE9160H -100V, O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD delta plc 2E12 FRE9160D FRE9160H FRE9160R star delta plc Rad Hard in Fairchild for MOSFET FRE9160

    Untitled

    Abstract: No abstract text available
    Text: FGH30N60LSD 600 V, 30 A PT IGBT Features General Description • Low Saturation Voltage: VCE sat = 1.1 V @ IC = 30 A Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as


    Original     		PDF FGH30N60LSD FGA30N60LSD O-247

    2E12

    Abstract: FRK9160D FRK9160H FRK9160R Rad Hard in Fairchild for MOSFET
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK9160D FRK9160H FRK9160R Rad Hard in Fairchild for MOSFET

    FRL9130R

    Abstract: 2E12 FRL9130D FRL9130H Rad Hard in Fairchild for MOSFET
    Text: FRL9130D, FRL9130R, FRL9130H 5A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 5A, -100V, RDS on = 0.550Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL9130D, FRL9130R, FRL9130H -100V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD FRL9130R 2E12 FRL9130D FRL9130H Rad Hard in Fairchild for MOSFET

    100v 23A P-Channel MOSFET

    Abstract: Rad Hard in Fairchild for MOSFET FRF9150R 17 17751 21 2E12 FRF9150D FRF9150H FRF9150
    Text: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRF9150D, FRF9150R, FRF9150H -100V, O-254AA 1000K 3000K 100v 23A P-Channel MOSFET Rad Hard in Fairchild for MOSFET FRF9150R 17 17751 21 2E12 FRF9150D FRF9150H FRF9150