F53 DIODE Search Results

IR LED and photodiode 5mm

Abstract: IR 5MM receiver infrared 5mm LED 940nm infrared receiver led 5mm IR 5MM led diode F53 diode lens photodiode phototransistor infrared 5mm receiver LED 940nm infrared 5mm LED 5mm led diode
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIR-131-160 REV : 1.0 PAGE : 1/8 5mm Infrared LED MODEL NO : IR1313C/F53
Features :
Peak wavelength p=940nm
View angle 35
High reliability
High radiant intensity
2.54mm Lead spacing
T-1 3/4 5mm Package

MO-203

Abstract: SC70-5L marking F53
Contextual Info: RClamp0503F RailClamp TVS Array for USB OTG Interfaces PROTECTION PRODUCTS - RailClamp® Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission

marking F53

Abstract: F53 DIODE MO-203 SC70-5L
Contextual Info: RClamp0503F RailClamp TVS Array for USB OTG Interfaces PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission

2NU diode

Abstract: LTC4098-3.6 DIODE C06-15
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM400GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

marking F53

Contextual Info: RClamp0503F RailClamp TVS Array for USB OTG Interfaces PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

GUN DIODES

Abstract: F53 DIODE
Contextual Info: RClamp0503F RailClamp TVS Array for USB OTG Interfaces PROTECTION PRODUCTS - RailClamp® Description Features  Transient protection for high-speed data lines to RailClamp TVS arrays are low capacitance ESD protection devices designed to protect high speed data

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ400R12KE3_B1 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #F3BF2$32%132214DDD& F3F23326F4&3 ' 6*6+,- ./01 6 2 6 . #F3BF23432&32F

LTC4098-3.6

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ2400R12KE3 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #F3BF2$%32&132214DDD' F3F23%326F4'3 *6+6, -./0 6 " 6 - #F3BF21432'32F%

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. BSDB-5000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SDB PACKAGE SHOWN ACTUAL SIZE PRV Ratings from 50 to 1000 Volts 0.205 (5.2) Dia Through

f54 DIODE

Abstract: IN 5008 DIODE F53 DIODE
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. BSDB-5000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SDB PACKAGE SHOWN ACTUAL SIZE PRV Ratings from 50 to 1000 Volts 0.205 (5.2) Dia Through

f54 DIODE

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. BSDB-5000-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES SDB PACKAGE SHOWN ACTUAL SIZE PRV Ratings from 50 to 1000 Volts 0.205 (5.2) Dia Through

1RF530

Abstract: 20n10 mtp20n10 IRF530 IRF130 IRF131 IRF132 IRF531 IRF532 IRF533
Contextual Info: ' 3469674 -û M FAIRCHILD IR f a i r c h i D E ~ 1 a M fib V M SEMICONDUCTOR ^ M A Schlumberger C om pany F 1 3 0 - 1 3 3 /IR T P 2 0 N A , 27859 F 5 3 0 - 5 3 3 0 8 /2 0 N N - C h a n n e l

BP107

Abstract: code f54
Contextual Info: WmfBtEK R7S2_ _08 Fast Recovery Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 „ Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 f l Q Q f j f j Q p 800 Amperes Average 2600 Volts

TIL100

Abstract: BP107
Contextual Info: b4E D • 7 E [ì4b51 DDOblìD 03^ H P R X R7S2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 . Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 08 Fast Recovery flç Q fjfjç p 800 Amperes Average

IRF4905

Contextual Info: IRF4905S/L Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs

Contextual Info: TOSHIBA C2M0S Logic TC74HC/HCT Series TC74HC251AP/AF 8-Channel Multiplexer 3-State The TC74HC251A is high speed CMOS 8-CHANNEL MULTIPLEXER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Contextual Info: SKM 100GB063D 7% U OV WH+ / * 00 ,3&)4?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 7X U OV WH :H 7X U MVN WH :H]^ ZNN G M[N L 7%'0) U ¥N WH MNN L ONN L ` ON G MN d0 7%'0) U OV WH MNN L 7%'0) U eN WH ¥V L ONN L ¥ON L ONN L 8 fN EEE g MVN

IRF5303

Abstract: irf530 diode IR 132 E FP133 IRF530-3 IR 126 D 34 FP-13 IRF532 F532 FP132
Contextual Info: IRF530/531/532/533 IRFP130/131/132/133 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ru gg ed ness Fast sw itching tim es Rugged p olysilicon gate cell structure Lower input capacitance Extended safe operating area

9393B

Contextual Info: SKM 200GB063D 7% V SI WH+ / * 00 ,3&)4?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 7X V SI WH :H 7X V RIJ WH :H¥] Superfast NPT-IGBT Modules SKM 200GB063D 390% ZJJ G SZJ P 7%'0) V [J WH SJJ P _JJ P ` SJ G RJ d0 7%'0) V SI WH SJJ P 7%'0) V eJ WH

IRFZ44 data

Abstract: AN-994 IRFZ44 IRFZ44L IRFZ44S
Contextual Info: PD - 9.893A IRFZ44S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ44S Low-profile through-hole (IRFZ44L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.028Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier

360V21

Abstract: AN-994 IRFBF20 IRFBF20L IRFBF20S "thermal via" PCB D2PAK
Contextual Info: PD - 9.1665 IRFBF20S/L PRELIMINARY HEXFET Power MOSFET l l l l l l l Surface Mount IRFBF20S Low-profile through-hole (IRFBF20L) Available in Tape & Reel (IRFBF20S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated D

IRFZ46

Abstract: AN-994 IRFZ46L IRFZ46S "thermal via" PCB D2PAK
Contextual Info: PD - 9.922A IRFZ46S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ46S Low-profile through-hole (IRFZ46L) 175°C Operating Temperature Fast Switching D VDSS = 50V RDS(on) = 0.024Ω G ID = 72A† S Description Third Generation HEXFETs from International Rectifier