F30S Search Results

F30SC3L

Abstract: A27AM
Contextual Info: Schottky Barrier Diode Twin Diode O U T L IN E D IM E N S IO N S F30SC3L Package I FTO -220 1 0 ±0.2 ^3.2-ai Unit • mm 2.7 ±a: (M Date code 30V 30A an ^3_ Type No. e ' i c 0181 v F30S(C3L M • T jl5 0 ° C Polarity • 1 £ V f = 0.45 V # Prrsm t j ^ y ' j i f f i l i

Contextual Info: F30S54/F30S57 Monolithic Serial Interface CMOS CODEC/FILTER FA IR C HILD A Schlumberger Company Preliminary Advanced Signal Processing Division Description Connection Diagram Top View The F30S54, F30S57 family consists of fj-law and A-law monolithic PCM CODEC/FILTERS utilizing the A /D and

F30S

Contextual Info: Schottky Barrier Diodes High frequ e n cy rectifyin g A bsolute M axim um R atings Type No. D F30S C 3M L E lectrical C haracteristics Conditions If Ir m ax V r=V rm (typ) B jc (max) [V] [A] [mA] [pF] [°C/W ] 0.45 12.5 0.55 15 V rm lo Conditions Tc Ifsm

k 2545 MOSFET

Abstract: F30S6P 2SJ375
Contextual Info: 6 0 V $ iU —X./V7—MOSFEX , 60V SERIES POWER MOSFET S ltlfl ¡ S ill O U T L IN E D IM E N S IO N S 2SJ375 Case : S T O -220 F30S6P 4.6 ±0.2 1.310.2- 10.2 ± 0.2 g y K iri^ (W ) Date code @ 48 J375 EIAJ No. 2,4 ±°-3 O.l^oi 3 Sri ©© Gate Drain

F30S60

Contextual Info: F30S64/F30S67 Monolithic Serial Interface CMOS CODEC/FILTER FA IR C H ILD A S chtum berger C om pany Preliminary Advanced Signal Processing Division Description Connection Diagram Top View The F30S64, F30S67 fam ily consists of /J-law and A-law m onolithic PCM C O D EC/FILTERS utilizing the A /D and

F3054

Abstract: F3057 F30S54 F30S54DC F30S57 F30S57DC 14 PIN CERAMIC DIP FAIRCHILD Transformer VRK
Contextual Info: F A I R C H F30S54/F30S57 I L D iv iu iiu iiu iiw A S chlum berger Com pany o b lia i in is iT a c c CMOS CODEC/FILTER Preliminary A dvanced Siqnal Processing Division Description Connection Diagram Top View The F30S54, F30S57 fam ily consists of /J-law and A-law

2SK2288

Abstract: F30S6N K2288 STO22
Contextual Info: 6 0 V v U - X /t* 7 -M 0 S F E T 60V SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2288 F30S6N fc&m • R A TIN G S ■ $ S ÎÎÎ t ^ 5 Ë f è Absolute Maximum Ratings m a Item ■% is Symbol Storage Temperature -f- -v 4- Jw iâiS Channel Temperature

F30S60

Abstract: F30S54 F30S57 F30S64 F30S64DC F30S67 F30S67DC TP3064 TP3067
Contextual Info: F A I R C H F30S64/F30S67 I L D M n Il Ii Ut hI I iUr I V InU nI I U A S chlum berger Com pany b Q oU rI iI ad ii II lnl l w t o l lrCf sl Vi or w o CMOS C O D EC /FILTER Preliminary Advanced Signal Processing Division Description Connection Diagram Top View

3FS-4A

Abstract: 3FS4A f10sc4 F30SC4 F30SC4M F15SC4M DF30SC4M F10SC4M
Contextual Info: S u rfa ce-M o u n t D e v ic e s Sch ottk y Barrier D io d e s Single Electrical Charateristics Absolute M axim um Ratings |R irr 6j/ 0ja 0jc If s m T stg Ti (m ax) Conditions (m ax) (m ax) (m ax) (m ax) (m ax) If V r=Vrm [A] [°C ] [°C ] [V] [A] [mA]

Contextual Info: FFH30S60S 30 A, 600 V STEALTH II Diode Features Description • Stealth Recovery, trr = 40 ns @ IF = 30 A • Max. Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II diode with soft recovery characteristics using silicon nitride passivated ion-implanted

f8l60

Abstract: 1FS6 diodes chart F20SC4 5l60 10SC4M 2FS6 10sc6 3FS4A F10SC4
Contextual Info: • ' _ 1 l> | - High Speed Rectifier Diodes Chart Ü AUT7 — K Type No. A xia l D iod es S in g le D iodes & Tw in D iodes S u r f a c e Mounting D e v ic e s M odules 2 D1NS4 D1N S6 D2S4M D2S6.M S2S6M D 3S4M D3S6.M S3S6M D 4 SC 6M S5S4M D 5S4M D 5S6M D 5S9M

F20SC4

Abstract: F20SC4M df40sc4 E10-P f10sc4 1fp3
Contextual Info: ^ lì S c h o ttk y B a rrie r Diodes Single Absolute Maximum Ratings V rm lo Conditions Tc Ifsm Tstg Tj [V] [A] [*c] [A] rc ] [°c] [V] - 5 5 - 150 150 -55 150 150 - 4 0 - 150 150 150 D1FS4 40 S I* 30 6 60 25 * 40 D2FS4 40 1.6 34* 6 60 1.5 3 1* D E3S4M

F30S60S

Abstract: FFP30S60S FFP30S60STU F30S60
Contextual Info: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: 6 0 Vi/'J-X /t7—MOSFET 60V SERIES POWER MOSFET WF2\|->£I2] O U T L IN E D IM E N S IO N S 2SK2288 F 3 0 S 6 N 60v 30a • R A T IN G S A b s o lu te Maxim um R a tin g s Id n S ym b ol a js Item S to ra g e T e m perature £ f* C onditions m 11 * ts

F30S60S

Abstract: FFH30S60S
Contextual Info: FFH30S60S tm 30A, 600V, STEALTH II Diode Features • Stealth Recovery, Trr = 40 ns @ IF = 30 A • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted

F30S60S

Contextual Info: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial

F30SC4

Contextual Info: Schottky Barrier Diode Twin Diode Wtm F30SC4 Date code Feature • 7 [ Æ - J U K • l Ë S I f f i 2kV S Ï I 4.5 ' Control No. • Tj=150°C • P rrsm Rating • Full Molded • High lo Rating-Small-RKG • Dielectric Strength 2kV • P R R S M T ’A ' ^ V Ì ' I ' K i E

j372

Contextual Info: RATINGS æ tt-K £ Cl nn T c = 25“C E le c tr ic a l C h a r a c te r is tic s Absolute Maximum Ratings £ Tch V dss Vg ss Id P t DC EIA J No. Type No. 2SK 2279 2SK 2280 [V ] [V ] 2SK2283 2SK2284 2SK2285 2SK 2286 2SK 2287 2SK2288 2SK 2289 2SK2290 T c = 25°C

F10SC

Abstract: 3fs6
Contextual Info: Surface-M ount Devices E-pack Schottky Barrier Diodes Single A b solute M axim um Ratings V rm lo [V ] [A ] I fsm Tstg Tj (m ax) Conditions (m ax) If V r ~ V rm [A ] PC] [°C ] [V ] [A ] [m A ] 40 40 6 60 51« 2 5*2 D2FS4 40 1.6 3 4 *2 6 60 1.5 3 1 *2 3

Contextual Info: FFH30S60S tm 30A, 600V STEALTH II Diode Features The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power

F30S60S

Abstract: FFH30S60STU F30S60 FFH30S60S
Contextual Info: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

5SC3

Contextual Info: S c h o ttk y B a rrie r Diodes Single M1F Absolute Maximum Ratings Type No. Electrical Characteristics V rm lo Conditions Ta I fsm Tstg Tj Vf (max) [V ] [A ] [•c] [A ] [•c] C*c] [V ] 5I 25 34 30 —55— 150 150 D 1FS4 40 6 60 D2FS4 40 6 60 DE3S4M 40

F30S60S

Contextual Info: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

DIODE SMD 6M

Contextual Info: Absolute Maximum Ratings T ype No. V rm lo Conditions [V ] [A ] [•G] I fsm Electrical Characteristics Tstg T| PC] Vf max Tc 30 30 4 40 *D F 4 0 S C 3 L 30 * 40 4 S60SC3M L 30 30 40 40 0M 60 : -5 5 -1 2 5 97 300 III 350 102 300 1 12 400 106 350 126 60 150