F30S60S Search Results

F30S60S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FFH30S60S 30 A, 600 V STEALTH II Diode Features Description • Stealth Recovery, trr = 40 ns @ IF = 30 A • Max. Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II diode with soft recovery characteristics using silicon nitride passivated ion-implanted	Original	FFH30S60S FFH30S60S	PDF
F30S60S Abstract: FFP30S60S FFP30S60STU F30S60 Contextual Info: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFP30S60S FFP30S60S F30S60S FFP30S60STU F30S60	PDF
F30S60S Abstract: avalanche diode 30A F30S60 30A Avalanche diode FFP30S60STU Contextual Info: FFP30S60S tm 30A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 40 ns @ IF = 30 A The FFP30S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as	Original	FFP30S60S FFP30S60S O-220-2L F30S60S avalanche diode 30A F30S60 30A Avalanche diode FFP30S60STU	PDF
F30S60S Abstract: FFH30S60S Contextual Info: FFH30S60S tm 30A, 600V, STEALTH II Diode Features • Stealth Recovery, Trr = 40 ns @ IF = 30 A • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted	Original	FFH30S60S FFH30S60S O-247-2L F30S60S	PDF
F30S60S Contextual Info: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial	Original	FFH30S60S FFH30S60S F30S60S	PDF
Contextual Info: FFH30S60S tm 30A, 600V STEALTH II Diode Features The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power	Original	FFH30S60S FFH30S60S	PDF
F30S60S Abstract: FFH30S60STU F30S60 FFH30S60S Contextual Info: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFH30S60S FFH30S60S F30S60S FFH30S60STU F30S60	PDF
F30S60S Contextual Info: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFP30S60S FFP30S60S F30S60S	PDF
F30S60S Contextual Info: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	FFP30S60S FFP30S60S F30S60S	PDF