Untitled
Abstract: No abstract text available
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 N-Channel Enhancement type OUTLINE DIMENSIONS F1E50VX2 Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2177
F1E50VX2)
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2SK2177
Abstract: F1E50VX2 F1E5
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 F1E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack E-pack (Unit : mm) 500V 1A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2SK2177
F1E50VX2)
Avalanche177
2SK2177
F1E50VX2
F1E5
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F1E50VX2
Abstract: 2sk2177
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 F1E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack (Unit : mm) 500V 1A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2177
F1E50VX2)
F1E50VX2
2sk2177
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F1E50VX2
Abstract: 2SK2177
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 F1E50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2177
F1E50VX2)
ch177
F1E50VX2
2SK2177
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F12F50VX3
Abstract: zp 35 FP20W50 F20W50VX3 f20w50 FP20W50VX3 F10F50VX3 F13F50VX3 F5ZP50VX3 F5F50VX3M
Text: ●面実装品 Surface Mount 品 名 Type No. 絶対最大定格 電気的特性 外形名称 Absolute Maximum Ratings Electrical Characteristics Package VDSS（V） I（ （V） Tch （℃） RDSON（max（ ）Ω） Ciss （pF） Crss （pF） td（on）typ（ns） tr typ
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F1E50VX3
F2E50VX3
F5ZP50VX3
F10S50VX3
F12ZP50VX3
F4ZP60VX3
F8ZP60VX3
STO-220
FTO-220
F12F50VX3
zp 35
FP20W50
F20W50VX3
f20w50
FP20W50VX3
F10F50VX3
F13F50VX3
F5ZP50VX3
F5F50VX3M
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2SK2177
Abstract: No abstract text available
Text: V X -n S /U -X /17-M O SFET V X -n SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2177 F1E50VX2 500V 1A ') - b’ 9 -i y ' b h <0 i 1-0 P l l , 7-1 £ C.'E < /£ $ i'o Lead type is available. S e e P. 11, 7-1 • R A TIN G S A b s o lu te Maxim um R a tin g s
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/17-M
2SK2177
F1E50VX2)
2SK2177
CF1E50VX2)
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Untitled
Abstract: No abstract text available
Text: V X -H y 'J -X /W -MOSFET . V X -I SERIES POWER MOSFET ¿WBTf-äsH is . w o tn m O U T L IN E D IM E N S IO N S Case : E-pack 2SK2177 F1E50VX2 6.6 ±02 2.55 ±0-2 0.5 ±<u 500v 1a _ 0 (D : Gate Q (D ^ Drain (3) ^ Source 0.6 ±0-2 M 1.1 ±0-2 [Unit ^ mm]
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2SK2177
F1E50VX2)
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F1E50
Abstract: No abstract text available
Text: V X v 'J -X /17-MOSFET V X SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK1672 F1E50 500v 1a 'J - K ? -f r t i> o £ t o P H , 7-1 L e a d type is available. • & z ."K < S e e P . 11, 7-1 £ £ v'o R ATING S A b s o lu te M axim um R a tin g s m
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/17-MOSFET
2SK1672
F1E50)
F1E50
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2SK1672
Abstract: F1E50 ifr 150 mosfet 2sk16 N51I
Text: V X v 'J - X MOSFET VX SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK1672 F1E50 500v 1a • Ü Èfêü RATINGS ■ A b s o lu te M a x im u m m Item B ' ' R a tin g s Storage T em perature ; :; :T r ^ ; T T Channel T em perature y -x tffi Drain • Source Voltage
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N-51i>
2SK1672
F1E50)
2SK1672
F1E50
ifr 150 mosfet
2sk16
N51I
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2SK1672
Abstract: F1E50 ID02
Text: V X v ' J - X /\°7 -M 0 S F E T VX S eries Power MOSFET 2SK1672 OUTLINE d im e n s io n s [F1E50] 500V 1A Case E-pack [U n it ! m m ] 6.6 ± 0 - 2.55 ±0-2 0.5 ±° i E H • X * § Ä Ciss j 0.6 ±0 2 • A C 1O O V i^ A f j C D ^ •x>r y^y^K co^iîm ^
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2SK1672
F1E50]
2SK1672
F1E50
ID02
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HTL7
Abstract: 2SK1672 TC55G f1e50
Text: VX'>U“ X /\°7 -M 0 S FET VX Series Power MOSFET 2SK1672 U M ttfcm OUTLINE DIMENSIONS Case • E-pack F1E50 500V 1A [Unit ! mm] <£> p°p£»Sif(W i E IA J No. • A * S M (Ciss) ÖWS0V, 72 K m - X A v ^ V W A 'A f f g lV s m Gate ( 2 ) 0 Drain (3) Source
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2SK1672
F1E50]
E1R307
HTL7
2SK1672
TC55G
f1e50
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2SK1395
Abstract: 2sk2006 2SK1539 2SK1685
Text: E IA J No. SM D jj&no v 2SK1861 2SK1931 2SK1194 2SK1195 2SK1672 2SK1533 2SK2005 2SK2006 LVX S eries 2SK1391 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 2SK1397 2SK1810 2SK1811 2SK1812 VX S e rie s 2SK1672 2SK1244 2SK1245 2SK1246 2SK1247 2SK1693 2SK1694 2SK1695
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2SK1861
2SK1931
2SK1194
2SK1195
2SK1672
2SK1533
2SK2005
2SK2006
2SK1391
2SK1392
2SK1395
2SK1539
2SK1685
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ens100
Abstract: 71ra
Text: VX-DvU-X /ffeMOSFET V X -n SERIES P0 H 4 MOSFET O U T L IN E D IM E N S IO N S Case I E-pack 2SK2177 F 1 E 5 0 V X 2 6.6 ±0 2 2.55 - 0.2 500V 1A 0. 5 t 0 1 0.5 0 .6 * ° 2 U ± 0 .2 [Unit '•mm] k O i t o P12, 7 - l £ c * i i < £ S i > „ Lead type is available. S e e P. 12, 7-1
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2SK2177
300fi
F1E50VX2)
ens100
71ra
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Untitled
Abstract: No abstract text available
Text: RATINGS {=1 « EIAJ No. 2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2187 2SK2188 2SK2189 2SK2190 2SK2191 2SK2192 2SK2193 2SK2194 2SK2195 2SK2196 2SK2197 2SK2198 Absolute Maximum Ratings Tch Vdss Vgss I d Pt DC Tc=25°C
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2SK2177
2SK2178
2SK2179
2SK2180
2SK2181
2SK2182
2SK2183
2SK2184
2SK2185
2SK2186
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