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    F122 Search Results

    F122 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    0805AF-122XJRC Coilcraft Inc General Purpose Inductor, 1.2uH, 5%, 1 Element, Ferrite-Core, SMD, 0907, CHIP, 0907, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    0805AF-122XJRB Coilcraft Inc General Purpose Inductor, 1.2uH, 5%, 1 Element, Ferrite-Core, SMD, 0907, CHIP, 0907, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    0805AF-122X Coilcraft Inc RF inductor, ferrite core, 5% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    0805AF-122XJR Coilcraft Inc RF inductor, ferrite core, 5% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc
    L17RRD2F122G Amphenol Communications Solutions Dsub, Stamped Signal 3A, RR Crimping Socket, AWG 24~28, 0.38um (15u\\) Gold +2um (78u\\)Sn , Tape & Reel 2000pcs, Left Feed Visit Amphenol Communications Solutions
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    F122 Price and Stock

    TE Connectivity SMQF1220KJT

    SMQF1W 220K 5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMQF1220KJT Reel 6,000 2,000
    • 1 -
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    • 10000 $0.22974
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    SMQF1220KJT Cut Tape 6,000 1
    • 1 $1.1
    • 10 $0.631
    • 100 $0.3811
    • 1000 $0.24364
    • 10000 $0.24364
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    SMQF1220KJT Digi-Reel 6,000 1
    • 1 $1.1
    • 10 $0.631
    • 100 $0.3811
    • 1000 $0.24364
    • 10000 $0.24364
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    Master Electronics SMQF1220KJT
    • 1 -
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    • 10000 $0.2125
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    ILSI America LLC IXA16-HBFF12-26.000MHZ

    CRYSTAL 26.0000MHZ 12PF SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXA16-HBFF12-26.000MHZ Reel 3,000 3,000
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    • 10000 $0.45301
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    KEMET Corporation R76QF122050H0J

    CAP FILM 2200PF 5% 1KVDC RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R76QF122050H0J Bulk 2,057 1
    • 1 $0.54
    • 10 $0.362
    • 100 $0.257
    • 1000 $0.20968
    • 10000 $0.16333
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    Newark R76QF122050H0J Bulk 5,400 1
    • 1 $0.582
    • 10 $0.31
    • 100 $0.257
    • 1000 $0.168
    • 10000 $0.15
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    TME R76QF122050H0J 2
    • 1 -
    • 10 $0.392
    • 100 $0.197
    • 1000 $0.169
    • 10000 $0.156
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    MORNSUN F1224XT-1WR3-TR

    DC DC CONVERTER 24V 1W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey F1224XT-1WR3-TR Cut Tape 1,752 500
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    • 1000 $1.8
    • 10000 $1.8
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    F1224XT-1WR3-TR Digi-Reel 1,752 500
    • 1 -
    • 10 -
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    • 1000 $1.8
    • 10000 $1.8
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    F1224XT-1WR3-TR Reel 1,500 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.8
    • 10000 $1.8
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    KEMET Corporation R413F12200000K

    CAP FILM 2200PF 10% 1KVDC RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R413F12200000K Bulk 1,048 1
    • 1 $0.63
    • 10 $0.42
    • 100 $0.2999
    • 1000 $0.24572
    • 10000 $0.19065
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    Avnet Americas R413F12200000K Bulk 26 Weeks 2,000
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    • 10000 $0.16102
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    F122 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    F122 LEDtronics Avionics Based LED Original PDF
    F-122 Rhombus Industries Inductor: Choke: 47u Original PDF
    F122 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    F1220 Polyfet RF Devices PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    F12-200 Triad Magnetics Transformers - Power Transformers - XFRMR LAMINATED THRU HOLE Original PDF
    F12-200 MagneTek Over 600 obsolete distributor catalogs now available on the Datasheet Archive - TRANSFORMER, SPLIT BOBBIN, PC MOUNT, SINGLE PRIMARY, 2.5VA, 12.6V CT Scan PDF
    F12-200-C2 Triad Magnetics Transformers - Power Transformers - XFRMR LAMINATED 2.4VA THRU HOLE Original PDF
    F12-200-C2-B Triad Magnetics Power Transformers, Transformers, XFRMR LAMINATED 2.4VA THRU HOLE Original PDF
    F1221 Polyfet RF Devices PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    F1222 Polyfet RF Devices PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Original PDF
    F12-25R12KT4G Infineon Technologies IGBT Modules up to 1200V TwelvePACK; Package: AG-ECONO3-1; IC (max): 25.0 A; VCE(sat) (max): 1.85 V; Configuration: TwelvePACK; Technology: IGBT4; Housing: EconoPACK 3; Original PDF
    F1225R12KT4GBOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 1200V 25A Original PDF
    F12-2850 Triad Magnetics Transformers - Power Transformers - XFRMR LAMINATED THRU HOLE Original PDF
    F12-2850-C2 Triad Magnetics Transformers - Power Transformers - XFRMR LAMINATED 36VA THRU HOLE Original PDF
    F12-2850-C2-B Triad Magnetics Power Transformers, Transformers, XFRMR LAMINATED 36VA THRU HOLE Original PDF
    F122A Unknown Discontinued Transistor Data Book 1975 Scan PDF
    F122K33Y5PL63J5 Vishay Capacitor: 1.2nF: 500: Y5P: 10%: 5: RDL: Bulk Original PDF
    F-122X Triad Magnetics Transformers - Power Transformers - CHASSIS MOUNT POWER TRANSFORMER Original PDF

    F122 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F1-22

    Abstract: TI Assembly Factory Code
    Text: TI 3mm FLANGED BASED LEDs COLOR CODE LEGEND PART NUMBER SELECTION GUIDE OPTIONS SERIES Fl 24 CG5 - 5V - P COLOR -CODE (SEE LEGEND) CODE CR5 CY5 CG5 SER IES 2 MULTICHIP F122 4 MULTICHIP F124 ELECTRICAL C H A R AC TER ISTIC S C O LO R CO D E [2] [5] [7]


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    CUB500 10-12mA S453705 0000L F1-22 TI Assembly Factory Code PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1222 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


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    F1222 PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1221 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance


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    F1221 PDF

    Untitled

    Abstract: No abstract text available
    Text: POLYFET R F DEVICES 47E D • PLYF f -ty-Ctf 7 2 m O D T QDDOOSb 1 ■ POLYFET RF DEVICES F1225 PATENTED GOLD METALIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse


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    F1225 200Drain PDF

    F1222

    Abstract: No abstract text available
    Text: polyfet rf devices F1222 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


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    F1222 F1222 PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1222 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET ¿P PACKAGE Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"process features gold metal for greatly extended


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    F1222 1110AvenidaAcaso, PDF

    mw 772

    Abstract: No abstract text available
    Text: SIEMENS BF 772 NPN Silicon RF Transistor • For application in TV-sat tuners Q62702-F1222 1 =C II RAs m BF 772 ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type Pin Configuration 3=B 4=E Package SOT-143


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    Q62702-F1222 OT-143 IS21el2 fl235bG5 G151713 mw 772 PDF

    TRANSISTOR k 1254

    Abstract: No abstract text available
    Text: SIEMENS BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration BF 771 RBs Q62702-F1225 1 =B Package II CO Marking 2= E


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    Q62702-F1225 OT-23 fl535b05 G121707 TRANSISTOR k 1254 PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1221 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


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    F1221 PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1220 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


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    F1220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS vz Wide Temperature Range series Anii Solvent ft'HUl'e / • Through 200V unly I • F K I ast- sizes nt f122 nr larger • S m a ll ca se sizes as s a m e as VR se rie s, b u t o p e r a tin g o v e r w id e te m p e ra t u r e ra n g e o f — 5 5 ~ + 1 0 5 “C.


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    h10513 120Hz, 120Hz 120Hz 300Hz PDF

    TCXO

    Abstract: TCXO-F100 F102 F101 F111 F112 F121 F122 crystal 10 MHz 1X107
    Text: ROHS-Compliant Product TCXO-F100 Series 1. Specification Type: F101 F121 F111 F102 F122 F112 Frequency range: 5 . 35 MHz 3 kHz- 5 . 35 MHz 35MHz Frequency stability vs. temp. - 40°C . + 80°C: < + 2 ppm Frequency stability vs. supply changes UB ± 5 %:


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    TCXO-F100 35MHz kHz35MHz 1x10-7 BF-79IS TCXO F102 F101 F111 F112 F121 F122 crystal 10 MHz 1X107 PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1220 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown " P o l y f e t " p r o c e s s features gold metal for greatly extended


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    F1220 PDF

    F1221

    Abstract: No abstract text available
    Text: polyfet rf devices F1221 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


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    F1221 Temperatur10 F1221 PDF

    vbfi

    Abstract: sot-23 Transistor MARKING CODE ZG sot-23 MARKING CODE ZG
    Text: SIEMENS BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 771 SOT-23 RBs Q62702-F1225 1=B


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    Q62702-F1225 OT-23 IS21el2 vbfi sot-23 Transistor MARKING CODE ZG sot-23 MARKING CODE ZG PDF

    sot marking code ZS

    Abstract: BF 145 transistor Q62702-F1225
    Text: BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 771 SOT-23 RBs Q62702-F1225 1=B 2=E


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    OT-23 Q62702-F1225 S21/S12| Dec-11-1996 sot marking code ZS BF 145 transistor Q62702-F1225 PDF

    mw 772

    Abstract: 772 transistor transistor 772 Q62702-F1222 sot marking code ZS BF 145 transistor
    Text: BF 772 NPN Silicon RF Transistor • For application in TV-sat tuners ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 772 SOT-143 RAs Q62702-F1222 1=C 2=E 3=B 4=E Maximum Ratings


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    OT-143 Q62702-F1222 S21/S12| Dec-13-1996 mw 772 772 transistor transistor 772 Q62702-F1222 sot marking code ZS BF 145 transistor PDF

    F1220

    Abstract: No abstract text available
    Text: polyfet rf devices F1220 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base


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    F1220 F1220 PDF

    8 pin ic 3773

    Abstract: C 5763 transistor
    Text: ◆Low Power Consumption : 25 A TYP. ◆Dropout Voltage : 30mA @ 60mV : 100mA @ 200mV ◆Maximum Output Current : 150mA (300mA=XC6209 E to H Types) ◆Highly Accurate :±2% (±30mV less than 1.5V) ◆Output Voltage Range : 0.9V ~ 6.0V (50mV Increments)


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    100mA 200mV 150mA 300mA XC6209 XC6209/XC6212 XC6209/XC6212Series XC6209/XC6212 8 pin ic 3773 C 5763 transistor PDF

    A450-FIS

    Abstract: F1-8751CXX F1-0031-40C 8122S fixed attenuator sma F1-8228S 8125s A40D-FIS 8222s ATTENUATOR
    Text: The F IS In-Line Fixed Attenuator is built to meet your low reflection attenuation requirements. Each cord is custom built to accommodate up to 10 meters of cable and the connector styles of your choice. The 5dB and 10dB versions hold a +/-.5dB tolerance with the 15dB and 20dB holding a 1dB tolerance. Please specify operating wavelength. The in-line attenuator pro­


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    15dBSC 1310nm F1-8324S 1550nm F1-8125S F1-8126S F1-8127S A450-FIS F1-8751CXX F1-0031-40C 8122S fixed attenuator sma F1-8228S 8125s A40D-FIS 8222s ATTENUATOR PDF

    transistor pt36c

    Abstract: gp714 diode GP113 transistor pt42c diode gp116 GP114 GP021 PT36c gp627 GP111
    Text: OR4E FPGA Ver 2.0 1 4/1/2002 Lattice Semiconductor Corp Series 4 FPGA Evaluation Board Diagram Revision 2.0 OR4E FPGA Ver 2.0 2 4/1/2002 Lattice Semiconductor Corp JTAG Programming Connection J55 Schematic page 4 An 8-pin connection to the JTAG interface used for programming.


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    ADDR17 ADDR16 DATA31 DATA30 DATA29 DATA28 DATA27 DATA26 DATA25 DATA24 transistor pt36c gp714 diode GP113 transistor pt42c diode gp116 GP114 GP021 PT36c gp627 GP111 PDF

    PM5357-BI

    Abstract: cpci backplane schematic plx vhdl code PCI9050-1 F 1uH smt unimax of thumbwheel switch LT1066 CC621660B PM5357-BI-P
    Text: PMC-Sierra, Inc. PRELIMINARY PM5357 S/UNI-622-POS REFERENCE DESIGN PMC-1981070 ISSUE 2 S/UNI-622-POS REFERENCE DESIGN PM5357 S/UNI-622-POS SATURN USER NETWORK INTERFACE 622-POS REFERENCE DESIGN PROPRIETARY AND CONFIDENTIAL PRELIMINARY ISSUE 2: FEBRUARY 2000


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    PMC-1981070 PM5357 S/UNI-622-POS S/UNI-622-POS PM5357 622-POS) PM5357-BI cpci backplane schematic plx vhdl code PCI9050-1 F 1uH smt unimax of thumbwheel switch LT1066 CC621660B PM5357-BI-P PDF

    Untitled

    Abstract: No abstract text available
    Text: HV LDF 0.2 % Vishay BCcomponents Ceramic Disc Capacitors Class 2, low loss 500 V, 1 kV, 2 kV and 3 kV FEATURES • High reliability • Low losses D e3 • High capacitance in small size • Kinked leads RoHS • Lead Pb -free available tangent line COMPLIANT


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    18-Jul-08 PDF

    8F124

    Abstract: No abstract text available
    Text: • INTL M I C R O C I R C U I T S INC M6E D ■ MflSOmfi O O O O H M O b7H uni SYSTEM CLOCK CHIP IMISC400 CMOS LSI PLL FREQUENCY SYNTHESIZER October 1991 PRODUCT FEA TURES PRODUCT DESCRIPTION Generates all Essential Clock Signals for All-In-One Motherboards.


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    IMISC400 80386SX, 80386DX 8F124 PDF