F1018 Search Results

F10186

Abstract: F10586 low power T Flip-Flop
Contextual Info: I HEX D FLIP-FLOP WITH RESET F10K VOLTAGE COMPENSATED ECL D E S C R I P T I O N — T h e F10186 and F10586 co n ta in six h ig h -sp e e d m aster/slave D -type flip -flo p s w h ich have a c o m m o n c lo c k . D ata is entered into th e m aster w hen th e C lo c k is

VTXO4310H-60.000MHZ

Contextual Info: • M F1018S-1 FOR DIGITAL MOBILE TELEPHONE, Tx DESCRIPTION FEATURES This SAW filter for the transmitting RF circuit of dig ita l m ob ile c o m m u n ica tio n e q u ip m e n t operating at 940 MHz ~ 960 MHz. 1. SMD package insures small size, lightweight.

8 bit adder and subtractor

Abstract: F10580 ECL ADDER adder H1211 F10180
Contextual Info: ; F10180 • F10580 / F10K VOLTAGE COMPENSATED ECL DUAL 2-BIT ADDER/SUBTRACTOR DESCRIPTION - The F10180/F10580 are high-speed, low-power Dual 2-Bit Adder/ Subtractors. It is designed to be used in special purpose adder/subtractors or in high speed multiplier arrays. Inputs for each adder are Carry-in, Operand A, and Operand B;

the pin function of ic 7107

Abstract: F10581 7108f
Contextual Info: F10181 • F10581 4-BIT ALU/FUNCTION GENERATOR F10K VOLTAGE COMPENSATED ECL DESCRIPTION — The F10181 and F10581 are high-speed arithm etic logic units capa­ ble of performing 16 logic operations and 16 arithm etic operations on two 4-bit words. Full internal carry is incorporated for ripple through operation.

Contextual Info: / J F10179 • F10579 CARRY LOOKAHEAD GENERATOR F10K VOLTAGE COMPENSATED ECL DESCRIPTION — T h e F10179 and F10579 are h ig h -sp e e d c a rry g en erato rs intended LOGIC SYMBOL fo r use with the F10181 4-bit A L U . T y p ic a l a d d itio n tim e s fo r tw o 32-b it w o rd s is 30 ns

Contextual Info: polyfet rf devices F1018 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: F10181^ F10581^ 4-BIT ALU/FUNCTION GENERATOR F10K VOLTAGE COMPENSATED ECL D E S C R IP T IO N — T h e F10181 and F10581 are high -spe ed a rith m e tic lo g ic un its cap a­ LO G IC S Y M B O L ble o f p e rfo rm in g 16 lo g ic o p e ra tio n s and 16 a rith m e tic o p e ra tio n s o n tw o 4 -b it w ords.

Contextual Info: polyfet rf devices F1018 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

F1018

Contextual Info: polyfet rf devices F1018 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: F10186 • F 10586v HEX D FLIP-FLOP WITH RESET F10K VOLTAGE COMPENSATED ECL D E S C R I P T I O N — T h e F10186 and F10586 c o n ta in six h ig h -sp e e d m aster/slave D -type flip -flo p s w h ich have a co m m o n clo c k . D ata is entered into th e m aster w hen th e C lo c k is

BF993

Abstract: Silicon N Channel MOSFET Tetrode
Contextual Info: Silicon N Channel MOSFET Tetrode • • BF 993 High gain, low distortion For VHF TV and FM mixer and input stages Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BF 993 ME Q62702-F899 Q62702-F1018 SOT 143 Maximum ratings

3XG0

Contextual Info: F10179 • F10579 CARRY LOOKAHEAD GENERATOR F10K VOLTAGE C OMPENSATED ECL D E S C R IP T IO N — T h e F 1 0 1 79 and fo r use w ith the F 10181 4 -b it A L U . w h en using F10181 in the ripp le g e n e ra to r is used, th e ty p ic a l add F 10579 are h ig h -s p e e d c arry g e n e ra to rs in ten ded

F10179

Abstract: F10181 F10579 G2 - 395 P2S3
Contextual Info: F10179 • F10579 CARRY LOOKAHEAD GENERATOR F10K VOLTAGE COMPENSATED ECL D E SC R IP TIO N — The F10179 and for use with the F10181 4-bit ALU. when using F10181 in the ripple generator is used, the typical add F10579 are high-speed carry generators intended

F10581

Abstract: F10181 F10179 F1018 fairchild ECL
Contextual Info: F10181^ F10581^ 4-BIT ALU/FUNCTION GENERATOR F10K VOLTAGE COMPENSATED ECL D E S C R IP T IO N — T h e F10181 a nd F10581 a re h ig h -s p e e d a rith m e tic logic units c a p a ­ ble o f p erform ing 16 lo g ic o p era tio n s and 16 a rith m e tic op era tio n s on tw o 4 -b it w ords.

BF993

Abstract: KDS 1M marking MTs g1625 I00MH Silicon N Channel MOSFET Tetrode t 993 d
Contextual Info: SIEM ENS BF 993 Silicon N Channel MOSFET Tetrode For high-gain, low-distortion VH F TV and FM mixer and input stages Type Marking Ordering Code tape and reel B F 993 ME Q62702-F1018 Pin Configuration 4 1 2 3 S D G2 Package1) Gì SOT-143 Maximum Ratings Parameter

ECL ADDER

Abstract: F10180
Contextual Info: F10180 • F10580 F10K VOLTAGE COMPENSATED ECL DUAL 2-BIT ADDER/SUBTRACTOR DESCRIPTION - The F10180/F10580 are high-speed, low-power Dual 2-Bit Adder/ Subtractors. It is designed to be used in special purpose adder/subtractors or in high speed multiplier arrays. Inputs for each adder are Carry-in, Operand A, and Operand B;

F2012

Abstract: F20250
Contextual Info: lowprofile SIP LUMPED CONSTANT PASSIVE DELAY LINE J # Analog input and output providing the required delay tim ing fu n ctio n s necessary in radar, com puter, com m unication, testing and instrum ent applications. # Delays stable and precise # 7-pin SIP package .23 0 high

Contextual Info: bEM^flEb F1018S-2 FOR DIGITAL M OBILE TELEPHONE, Tx 0DEb50b FEATURES This SAW filter for the transmitting RF circuit of d ig ita l m obile co m m u n ica tio n e q u ip m e n t operating at 940 MHz ~ 960 MHz. 1. SMD package insures small size, lightweight.

STK 442 - 130

Abstract: stk 412 -130 BT 342 project ID78K0S-NS IE-78K0S-NS IE-78K0S-NS-A RA78K0S stk 412 - 240 STK 412 240 stk 412 170
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

tektronix 213 dmm

Abstract: Tektronix DMM 353 u17366 ID78K0-QB QB-78K0KX1H F03a0 U17468E BDW32 asm106 uPD78Fxxx
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

A1015

Abstract: IE-703002-MC V850E1 V850ES V853
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

tektronix 213 dmm

Abstract: IECUBE ID78K0-QB U18371E A5004 A 42 B331 ASM-142
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

stk 282 270

Abstract: STk 442 120 STK 411 - 230 E stk 412 -410 PC-9821 CC78K4 ID78K4-NS IE-78K4-NS RA78K4 U15255J
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

diode SFR-136

Abstract: SFR 136 213-DMM 7 segment E10501 STK 415 90 CC78K0 CC78K0R CC78K0S RA78K0R stk 282
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社