F2012 Search Results

Contextual Info: polyfet rf devices F2012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2012

Contextual Info: polyfet rf devices F2012 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

I2C applications msp430

Abstract: msp430f2013 spi msp430 10 bit adc msp430 led F2012 EZ-430 eZ430 MSP430F2012 MSP430F2013
Contextual Info: Contact Us | TI Worldwide : United States | my.TI Login Search by Keyword GO Search by Part Number GO All Searches TI Home > Semiconductors > Microcontrollers > MSP430 Ultra - Low Power Microcontrollers > MSP430 USB Stick F2012 Board EZ430-T2012, Status: ACTIVE

Contextual Info: polyfet rf devices F2012 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET £ P PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"to process features gold metal for greatly extended

EZ430-T2012

Abstract: F2012 MSP430F2013 MSP430 MSP430F2012 msp430 10 bit adc eZ430-F2013
Contextual Info: MSP430 USB Stick F2012 Board Status: ACTIVE EZ430-T2012 EZ430-T2012 Name MSP430 USB Stick F2012 Board Status ACTIVE Host PC OS N/A Current Version v1.0 Version Date 10/01/2006 Order Options Order Online Product Information Description The eZ430-T2012 includes three F2012-based target boards for the eZ430-F2013

This article

Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
Contextual Info: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left

F2000ERW

Abstract: 217F f2001e
Contextual Info: F2000ERW Series Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:

023M01

Abstract: F0805
Contextual Info: アレイ形積層セラミックコンデンサ ARRAY TYPE MULTILAYER CERAMIC CAPACITOR code Temp.characteristics operating Temp. range BJ OPERATING TEMP. CH B K X5R K 55VJ85C X7R K 55VJ125C C0H K 55VJ125C 25VJ85C 特長 FEATURES Y2125形状で4回路構成であるためより高密度、高効率な実装を実現

F2012

Abstract: F20250
Contextual Info: lowprofile SIP LUMPED CONSTANT PASSIVE DELAY LINE J # Analog input and output providing the required delay tim ing fu n ctio n s necessary in radar, com puter, com m unication, testing and instrum ent applications. # Delays stable and precise # 7-pin SIP package .23 0 high

A beam lead ring quad of four Schottky diodes

Contextual Info: Silicon Beam-Lead Schottky Barrier Mixer Diodes EQA lpha DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication Description

signal transformer 4-44-5016

Abstract: pss 3056 4-44-4020 spw-055 transformer 4-44-6024 4-49-8230 4-44-5016 4-44-3012 4-44-3010 4-49-6024
Contextual Info: Cross Reference Chart Competitor Part No. 4-44-5010 4-44-5012 4-44-5016 4-44-5020 4-44-5024 4-44-5028 4-44-5036 4-44-3010 4-44-3012 4-44-3016 4-44-3020 4-44-3024 4-44-3028 4-44-3036 4-44-6010 4-44-6012 4-44-6016 4-44-6020 4-44-6024 4-44-6028 4-44-6036 4-44-7010

MRF255 equivalent

Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
Contextual Info: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341

Contextual Info: FACTSHEET F-201-2 YFW–20–07–H–05–SB YFW–20–09–H–05–SB YFW–40 –12–H–10–SB HI-DENSITY STACKER YFW SERIES 1,27mm .050" pitch TM SPECIFICATIONS Mates with: YFS TEST TS RESUL Materials: Insulator Material: Black Liquid Crystal Polymer

X485T

Abstract: AMBA AXI4 verilog code axi wrapper
Contextual Info: Xilinx Design Tools: Release Notes Guide Vivado Design Suite and ISE Design Suite UG631 v2012.2, v14.2 July 25, 2012 Notice of Disclaimer The information disclosed to you hereunder (the “Materials”) is provided solely for the selection and use of Xilinx products. To the maximum

SM889

Abstract: B2366 lk78k0 E3405 LT1412 020000020000FC her365 020000021000EC B7435 b8524
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

m430f

Abstract: MSP430F2001 topside marking msp430f20x3 a42 smd type diode M430F2001
Contextual Info: MSP430F20x3 MSP430F20x2 MSP430F20x1 www.ti.com SLAS491I – AUGUST 2005 – REVISED DECEMBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • • • • • • • • Low Supply Voltage Range 1.8 V to 3.6 V Ultra-Low Power Consumption – Active Mode: 220 µA at 1 MHz, 2.2 V

FS10 TM

Abstract: F28-700 Transistor FS10 f28-200 F10-110 f10360 FS16-400 TRANSFORMER CT 1A TRANSFORMER CT 2A F12-500
Contextual Info: Class B UL Recognized PC Mount: Split Pack UL File E53148 : D e s c r i p t i o n The Triad Split Pack split bobbin transformer is an extremely versatile tool for PC board applications. Split Pack transformers are nonconcentrically wound - with primaries and secondaries side-by-side. Unlike the

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

Contextual Info: MSP430F20x3 MSP430F20x2 MSP430F20x1 www.ti.com SLAS491I – AUGUST 2005 – REVISED DECEMBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • • • • • • • • • • • Low Supply Voltage Range 1.8 V to 3.6 V Ultra-Low Power Consumption – Active Mode: 220 µA at 1 MHz, 2.2 V

af201

Abstract: AOX2051 Am319 AF211 AF212 AF203 AF216 AM2024 ls 11s AM211
Contextual Info: y i Am3550 MixeqT ECL/TTL I/O Mask-Programmable Gate Array • — PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 5228 equivalent gates - 576 internal cells - Up to 124 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case Tpd = 0.6 ns Hi-Speed

switches

Abstract: F2034
Contextual Info: MAGNETIC SWITCHES - INTERRUTTORI MAGNETICI FPB Mounting holes for fixed position not adjustable . Small dimensions. Long electrical life. Body material: Polyamide. Centre of the sensitive area: electronic, T = 5 mm; reed, T = 8 mm Fori di fissaggio per posizione fissa (non regolabile).

msp430 interfacing with buzzer

Abstract: msp430 microcontroller based water level controller circuit 8051 Digital Frequency Meter with LCD Display report
Contextual Info: MSP430 Microcontroller Basics This page intentionally left blank MSP430 Microcontroller Basics John H. Davies AMSTERDAM • BOSTON • HEIDELBERG • LONDON NEW YORK • OXFORD • PARIS • SAN DIEGO SAN FRANCISCO • SINGAPORE • SYDNEY • TOKYO Newnes is an imprint of Elsevier

Contextual Info: CLASS 2/3 TRANSFORMER F20-120-C2 Description: The F20-120-C2 is a single primary and dual secondary, split bobbin design which operates with an input of 115V. The secondaries are 10V @ 0.12A each. They can be used independently up to 300V difference between them or in series for double

Contextual Info: F2000ERW Series Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features: