EUDYNA HIGH POWER Search Results

EMC21L1004GN

Abstract: EUDYNA 26841 2110 - 2170mhz power module
Contextual Info: Eudyna GaN-HEMT 10W Preliminary EMC21L1004GN High Voltage - High Power GaN-HEMT Power Amplifier Module FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB typ. at Pout=22dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・Proven Reliability

EGN26A180IV

Abstract: Eudyna Devices EGN26A180
Contextual Info: Eudyna GaN-HEMT 180W Preliminary ES/EGN26A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability

GaN amplifier

Abstract: EGN35A180IV
Contextual Info: Eudyna GaN-HEMT 180W Preliminary ES/EGN35A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability

EGN045MK

Contextual Info: Eudyna GaN-HEMT 45W Preliminary EGN045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 12dB(typ.) @ f=2200MHz ・Broad Frequency Range : 800 to 2200MHz

EGN010MK

Abstract: 6 ghz amplifier 10w
Contextual Info: Eudyna GaN-HEMT 10W Preliminary EGN010MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 41.0dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15dB(typ.) @ f=3500MHz ・Broad Frequency Range : 800 to 3700MHz

27 31 GHz HPA

Abstract: EGN21A090IV hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090
Contextual Info: Eudyna GaN-HEMT 90W Preliminary EGN21A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz

EGN090MK

Abstract: 679-10 dsa0044095
Contextual Info: Eudyna GaN-HEMT 90W Preliminary HS/EGN090MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51.0dBm typ. @ P3dB ・High Efficiency: 65%(typ.) @ P3dB ・Linear Gain : 18dB(typ.) @ f=900MHz ・Proven Reliability

EGN26A090IV

Abstract: EUDYNA EGN26A090
Contextual Info: Eudyna GaN-HEMT 90W Preliminary ES/EGN26A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability

GaN amplifier

Abstract: EUDYNA
Contextual Info: Eudyna GaN-HEMT 30W Preliminary ES/EGN26A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15.0dB(typ.) @ f=2.6GHz ・Proven Reliability

hpa L-band

Abstract: EGN21A180IV
Contextual Info: Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz

Contextual Info: Eudyna GaN-HEMT 30W Preliminary ES/EGN35A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 13.0dB(typ.) @ f=3.5GHz ・Proven Reliability

Contextual Info: Eudyna GaN-HEMT 90W Preliminary ES/EGN35A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability

EGN030MK

Abstract: Eudyna EGN030MK High Power GaN-HEMT EUDYNA
Contextual Info: Eudyna GaN-HEMT 30W Preliminary ES/EGN030MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 46.5dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 12dB(typ.) @ f=2700MHz •Broad Frequency Range : 800 to 2800MHz

EGN030MK

Abstract: Eudyna EGN030MK High Power GaN-HEMT
Contextual Info: Eudyna GaN-HEMT 30W Preliminary EGN030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 12dB(typ.) @ f=2700MHz ・Broad Frequency Range : 800 to 2800MHz

EGN010MK

Contextual Info: Eudyna GaN-HEMT 10W Preliminary ES/EGN010MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 41.0dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 13dB(typ.) @ f=3500MHz •Broad Frequency Range : 800 to 3700MHz

Eudyna Devices

Abstract: VIP 22 A FB113 ECM-A0
Contextual Info: ES/EMY1401VI Preliminary Data Sheet Rev1.2 July,2005 ES/EMY1401VI 11.3 Gb/s LN Modulator Driver IC 1. Features 1 2) 3) 4) 5) 6) Operation up to 11.3 Gb/s Internal Input 50 ohm Termination Output Voltage Swing: 5.0V 50ohm Load) Power Supply Voltage : -5.20V

Eudyna Devices

Abstract: EMM5206LP microwave sensor RO4003C k band oscillator 2329500 JESD22-A114-C EUDYNA Eudyna high power Canton AS 100 SC
Contextual Info: EMM5206LP K Band Oscillator MMIC FEATURES ・ High Output Power : Pout =5 dBm @ Vdd = 4 V typ. ・ Low Power Consumption : Idd = 20 mA @ Vdd = 4 V (typ.) ・ Low Phase Noise : n = -100 dBc/Hz @ 100 kHz offset, fosc = 24 GHz ・ Low Spurious Level : RJ2nd < -40 dBc

L-Band

Contextual Info: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to

EUDYNA

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

FLU35XM

Abstract: Eudyna Devices
Contextual Info: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the

FLL57MK

Contextual Info: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to

FLL177ME

Abstract: Eudyna Devices 0.1 j100
Contextual Info: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to

FLL410IK-4C

Abstract: ED-4701 eudyna GaAs FET Eudyna Devices power amplifiers
Contextual Info: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is

Eudyna Devices

Abstract: Doppler Sensor K-band DOPPLER 24ghz k band oscillator doppler sensor mmic case styles EMM5206LP EUDYNA Canton AS 100 SC RM1101
Contextual Info: EMM5206LP K Band Oscillator MMIC FEATURES ・High Output Power : Pout=5dBm @Vdd=4V typ. ・Low Power Consumption : Idd=20mA @Vdd=4V (typ.) ・Low Phase Noise : Φn=-100dBc/Hz @100KHz offset, fosc=24GHz ・Low Spurious Level : RJ2nd<-40dBc ・High Reliability, High Breakdown Voltage : Vgdo=20V, Igdo=160uA