FLL410IK-4C
Abstract: ED-4701 eudyna GaAs FET Eudyna Devices power amplifiers
Text: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is
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FLL410IK-4C
FLL410IK-4C
ED-4701
eudyna GaAs FET
Eudyna Devices power amplifiers
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L-Band
Abstract: FLL410IK-3C
Text: FLL410IK-3C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=13.0dB(Typ.) ・High PAE: ηadd=52%(Typ.) ・Broad Band: 2.5~2.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is
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FLL410IK-3C
FLL410IK-3C
L-Band
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L-Band
Abstract: No abstract text available
Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design
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FLL810IQ-4C
FLL810IQ-4C
L-Band
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Eudyna Devices
Abstract: eudyna fet FLL810IQ-3C
Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.
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FLL810IQ-3C
FLL810IQ-3C
Symbo4888
Eudyna Devices
eudyna fet
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L-Band
Abstract: 842 FET
Text: FLL600IQ-2 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which
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FLL600IQ-2
FLL600IQ-2
L-Band
842 FET
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Eudyna Devices power amplifiers
Abstract: eudyna GaAs FET Amplifier FLL1200IU-2 Eudyna high power
Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that
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FLL1200IU-2
FLL1200IU-2
t4888
Eudyna Devices power amplifiers
eudyna GaAs FET Amplifier
Eudyna high power
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Untitled
Abstract: No abstract text available
Text: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium
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FSX027WF
FSX027WF
12GHz.
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FLL1500IU-2C
Abstract: imt 901 FLL1500
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2C
FLL1500IU-2C
imt 901
FLL1500
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L-Band
Abstract: FLL410IK-4C
Text: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is
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FLL410IK-4C
FLL410IK-4C
L-Band
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FLL21E004ME
Abstract: No abstract text available
Text: FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION
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FLL21E004ME
36dBm
17GHz
2200MHz
FLL21E004ME
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FLL21E010MK
Abstract: R104-5
Text: FLL21E010MK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION
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FLL21E010MK
40dBm
17GHz
2200MHz
FLL21E010MK
R104-5
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601 121
Abstract: FLL800IQ-2C
Text: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that
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FLL800IQ-2C
FLL800IQ-2C
601 121
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FLL1500IU-2C
Abstract: eudyna GaAs FET Amplifier
Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that
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FLL1500IU-2C
FLL1500IU-2C
eudyna GaAs FET Amplifier
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FLL810IQ-3C
Abstract: No abstract text available
Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.
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FLL810IQ-3C
FLL810IQ-3C
Symbo4888
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eudyna GaAs FET Amplifier
Abstract: FLL2400IU-2C Eudyna Devices
Text: FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W Typ. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that
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FLL2400IU-2C
FLL2400IU-2C
eudyna GaAs FET Amplifier
Eudyna Devices
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Untitled
Abstract: No abstract text available
Text: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,
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FLL21E135IX
2170MHz
FLL21E135IX
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ED-4701
Abstract: FLL21E135IX
Text: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,
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FLL21E135IX
2170MHz
FLL21E135IX
ED-4701
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FLL1200IU-2
Abstract: No abstract text available
Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that
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FLL1200IU-2
FLL1200IU-2
t4888
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Eudyna Devices power amplifiers
Abstract: FLL600IQ-2 eudyna GaAs FET Amplifier
Text: FLL600IQ-2 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which
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FLL600IQ-2
FLL600IQ-2
Commu4888
Eudyna Devices power amplifiers
eudyna GaAs FET Amplifier
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magS12
Abstract: fll21 4-10-107 FLL21E004ME L-Band
Text: FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION
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FLL21E004ME
36dBm
17GHz
2200MHz
FLL21E004ME
magS12
fll21
4-10-107
L-Band
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FLL21E090IK
Abstract: No abstract text available
Text: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,
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FLL21E090IK
43dBm
2200MHz
FLL21E090IK
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7824 TO-3 package
Abstract: high power FET transistor s-parameters FLL21E040IK MA 7824. to-3 Eudyna Devices power amplifiers
Text: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers high efficiency,
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FLL21E040IK
40dBm
2200MHz
FLL21E040IK
7824 TO-3 package
high power FET transistor s-parameters
MA 7824. to-3
Eudyna Devices power amplifiers
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FSX027WF
Abstract: fsx027w
Text: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium
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FSX027WF
FSX027WF
12GHz.
Powe4888
fsx027w
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FLL21E060IY
Abstract: FLL21E06 diode gp 421 ED-4701 ED 17642
Text: FLL21E060IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E060IY is a high power GaAs FET that offers high efficiency,
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FLL21E060IY
2170MHz
FLL21E060IY
FLL21E06
diode gp 421
ED-4701
ED 17642
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