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    STMicroelectronics ESM6045AV

    TRANS NPN DARL 450V 72A ISOTOP
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    ESM6045A Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ESM6045A Philips Semiconductors Silicon Darlington Power Transistors Original PDF
    ESM6045AF STMicroelectronics NPN Darlington Power Module Scan PDF
    ESM6045AV Philips Semiconductors Silicon Darlington Power Transistors Original PDF
    ESM6045AV STMicroelectronics TRANS DARLINGTON NPN 450V 72A 4ISOTOP Original PDF
    ESM6045AV STMicroelectronics NPN DARLINGTON POWER MODULE Original PDF
    ESM6045AV STMicroelectronics NPN DARLINGTON POWER MODULE Original PDF
    ESM6045AV Philips Semiconductors High Speed High Voltage Darlingtons / Transistors Scan PDF
    ESM6045AV STMicroelectronics NPN Darlington Power Module Scan PDF
    ESM6045AV STMicroelectronics Shortform Data Book 1988 Short Form PDF

    ESM6045A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE ) s ( t c u d o ) r


    Original     		PDF ESM6045AV

    ESM6045AV

    Abstract: No abstract text available
    Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF ESM6045AV ESM6045AV

    ESM6045AV

    Abstract: No abstract text available
    Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 1 INDUSTRIAL APPLICATIONS:


    Original     		PDF ESM6045AV ESM6045AV

    ESM6045AV

    Abstract: No abstract text available
    Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF ESM6045AV ESM6045AV

    NPN DARLINGTON POWER module isotop

    Abstract: isotop bipolar CIRCUIT DIAGRAM UPS schematic diagram UPS smps 450 W SMPS IC 2003 UPS circuit diagram ESM6045AV
    Text: ESM6045AV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS FULLY INSULATED PACKAGE UL COMPLIANT EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE • ■ ■ ■ ■ ■ INDUSTRIAL APPLICATIONS:


    Original     		PDF ESM6045AV NPN DARLINGTON POWER module isotop isotop bipolar CIRCUIT DIAGRAM UPS schematic diagram UPS smps 450 W SMPS IC 2003 UPS circuit diagram ESM6045AV

    ESM6045AV

    Abstract: 62us
    Text: ESM6045AV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    Original     		PDF ESM6045AV ESM6045AV 62us

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    fw26025

    Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
    Text: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250


    Original     		PDF O-264 HD1530JL* HD1750JL* O-220 OT-223 O-220FP OT23-6L O-126 O-220FH ISOWATT218 fw26025 FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH

    BUX98PI

    Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
    Text: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490


    Original     		PDF 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 BUX98PI TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI

    STE38NA50

    Abstract: STE90N25 STF8045DV ste24n90 ESM6045DV STE45N50 ESM4045AV ESM2012DV ESM2030DV ESM3030DV
    Text: TRANSISTORS POWER MODULES BIPOLAR IN ISOTOP For other conf. Conf. D A B A D B D D D D D D A A A C A C C B VCEO VCEV IC Ptot VCE sat @ IC / IB (V) (V) (A) (W) (V) (A) 125 125 125 300 300 300 300 450 450 450 450 450 450 450 450 450 450 450 450 450 150 200


    Original     		PDF STE250N06 STE180N10 STE150N10 STE100N20 STE90N25 STE50N40 STE53NA50 STE47N50 STE45N50 STE38NA50 STE38NA50 STE90N25 STF8045DV ste24n90 ESM6045DV STE45N50 ESM4045AV ESM2012DV ESM2030DV ESM3030DV

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    BUW52I

    Abstract: BU808d STI-3007 STI3007 BU941ZP BDW91 STI3005 BUT72I BSS44 S2000A
    Text: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION VCEO VCBO IC Ptot Resistive Switching Typical application Package Type V BU808DFI* BUH315 BUH315D THD218DHI THD277HI BU508AFI BU508DFI S2000AFI THD219HI BU508A BU508D BU208A BU208D BUH615D THD215HI BUH1015HI


    Original     		PDF BU808DFI* BUH315 BUH315D THD218DHI THD277HI BU508AFI BU508DFI S2000AFI THD219HI BU508A BUW52I BU808d STI-3007 STI3007 BU941ZP BDW91 STI3005 BUT72I BSS44 S2000A

    ST1803DFP

    Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
    Text: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D


    Original     		PDF OT-32 O-126 BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 ST1803DFP BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent

    BUL310P

    Abstract: smps 100w half bridge BUW89 complementary BUR52 to-39 transistors BUTW92 bd707 application BU508DFI BUH315D BUH515
    Text: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION TYPICAL APPLICATION Device BU808DFI BUH315 BUH315D THD218DHI BU508AFI BU508DFI BUH515 BUH515D S2000AFI THD277HI BUH615D THD215HI THD200FI BUH1015HI BUH1015 BUH1215 BUH2M20AP VCEO VCBO IC Ptot V (V) (A) (W)


    Original     		PDF BU808DFI BUH315 BUH315D THD218DHI BU508AFI BU508DFI BUH515 BUH515D S2000AFI THD277HI BUL310P smps 100w half bridge BUW89 complementary BUR52 to-39 transistors BUTW92 bd707 application BU508DFI BUH315D BUH515

    sot227a

    Abstract: ESM6045D 6045 ESM6045A 6Q45 6045D SOT-227A
    Text: Lf b £>53^31 Q 0 n i 2 3 D E V E L O P M E N T DATA J This data sheet coi. ¿ins advance information and specifications are subject to change w ithout notice. 1 ESM6045A V ESM6045D(V) N AMER PHILIPS/DISCRETE ESE D SILICON DARLINGTON POW ER TRAN SISTO RS


    OCR Scan     		PDF bbS3131 ESM6045A ESM6045D OT227B. 6045D ICsat/50 Csat/50. T-33-35 sot227a 6045 6Q45 SOT-227A

    Untitled

    Abstract: No abstract text available
    Text: rZ Z SCS-THOMSON ESM6045AV Efflfl@fô»i CT l«S_ NPN DARLINGTON POWER MODULE . HIGH C U R R E N T P O W E R BIPO LAR M O DU LE « V E R Y LOW Rm JU NCTIO N C A S E . SPEC IFIED A CCID EN T AL O V ER LO A D AREAS . ISOLATED C A S E (2500V RMS « E A S Y T O M OUNT


    OCR Scan     		PDF ESM6045AV

    sc-0352

    Abstract: pin diagram of ic 1496 LC 0809 ESM6045AF ESM6045AV NPN DARLINGTON POWER module isotop si272
    Text: 30E G l J> m SCS-THOM SON HJCTlMOes QÜ3aMbfl T ESM6045AF ESM6045AV S 6 S-THOMSÔN NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE • VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS ■ EASY TO MOUNT


    OCR Scan     		PDF ESM6045AF ESM6045AV ESM6045AV T-91-20 O-240) sc-0352 pin diagram of ic 1496 LC 0809 ESM6045AF NPN DARLINGTON POWER module isotop si272

    Untitled

    Abstract: No abstract text available
    Text: SG S-TH O M SO N ESM6045AV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS:


    OCR Scan     		PDF ESM6045AV

    diode ESM 134

    Abstract: No abstract text available
    Text: II LbS3131 D 0 n i a 3 1 D EVELO PM EN T DATA ESM6045A V ESM6045D(V) This data sheet coi. ains advance information and specifications are subject to change without notice. N AflER PHILIPS/DISCRETE E5E D T - 2 3 -3 5 “ S IL IC O N D A R LIN G T O N P O W E R T R A N S IS T O R S


    OCR Scan     		PDF LbS3131 ESM6045A ESM6045D 6045D ICsat/50 diode ESM 134

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON llO O M iL iC T IM iK S ESM 6045AV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE


    OCR Scan     		PDF 6045AV ESM6045AV

    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


    OCR Scan     		PDF BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    diode 400V 4A

    Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV
    Text: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE *C(DC)(tJ SOT-93 V CE(*at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A


    OCR Scan     		PDF BU826 BU826A OT-93 BUV90 BUV90F OT-199 ESM3045AV ESM3045DV OT-227B2 diode 400V 4A DIODE 3A 1000V BUT21A 1000v 3a diode BUX86 Diode 400V 5A ESM5045DV diode 400V 6A