mpc7410 BGA PACKAGE thermal profile
Abstract: hall sensor smt l20 MCM64E836 MPC7400 MPC7450 sanyo timing controller smi 5502
Text: Freescale Semiconductor, Inc. Advance Information MPC7450EC/D Rev. 4, 11/2001 MPC7450 RISC Microprocessor Hardware Specifications Freescale Semiconductor, Inc. C IN . R, O The MPC7450 is a reduced instruction set computing RISC CT microprocessor that implements
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MPC7450EC/D
MPC7450
MPC7450
MPC7450.
MPC7400"
mpc7410 BGA PACKAGE thermal profile
hall sensor smt l20
MCM64E836
MPC7400
sanyo timing controller
smi 5502
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T0220IS
Abstract: LC-485 D55A7D D55A D54A7D
Text: D54A7D NPN POWER DARLINGTON TRANSISTORS 100 VOLTS 7 AMP, 30 WATTS Designed for high power switching applications, hammer drive, pulse motor drive applications. Features: • High D C Current Gain: hFE = 2000 Min. (at V q e = 3V, lc =3A) CASE STYLE TO-220IS
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D54A7D
D55A7D
TQ-220
T0-220IS
T0-220IS
T0220IS
LC-485
D55A7D
D55A
D54A7D
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NS 8002 1151
Abstract: MM3735 TO213AA MAX3886
Text: b3b?2S4 OOTSSDl S • f l O T b , ^ ^ / 4bE D MO TO R O L A SC X ST R S / R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MM3735 MM3737 DM0 Discrete Military Products NPN Silicon Sm all-Signal Transistors Suffixes: //#//// H, HX, HXV Processed per MIL-S-19500/395B
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MM3735
MM3737
MIL-S-19500/395B
MM3737
Uni500
O-116)
NS 8002 1151
TO213AA
MAX3886
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MM3227
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b?55M 00*î24«î b S ■ f l O T b SEM ICONDUCTOR TECHNICAL DATA MM3227 Suffixes: Discrete M ilitary Products D m NPN Silicon Sm all-Signal Transistor H, HX //I//// . . . d esig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap p licatio n s
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MM3227
MIL-S-19500/317
O-116)
MM3227
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MM2896
Abstract: To206AF bo140
Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b75S4 00^24^4 ^ 1 ■nOTb SEM ICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MM2896 DM0 Suffixes: HX, HXV lllllll NPN Silicon Small-Signal Transistor Processed per MIL-S-19500/xxx . . . desig ned fo r g en era l-p u rp o s e sw itch in g and a m p lifie r ap plications
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b3b75S4
MM2896
MIL-S-19500/xxx
O-116)
MM2896
To206AF
bo140
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017Q
Abstract: MOTOROLA TRANSISTOR 210
Text: MOTOROLA SC XSTRS/R F MbE D b3b?254 00*^73 b inoTt MOTOROLA Order this data sheet by MRA1618-35H/D SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Power Transistor . . . designed primarily for wideband, large signal output and driver amplifier stages in the
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MRA1618-35H/D
MRA1618-35H
017Q
MOTOROLA TRANSISTOR 210
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F •4bE D ■ b3b72 SM OOReSOT T ■ MOTb / MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete Military Products DM0 lllllll NPN Silicon Small-Signal Transistor . . . designed for general-purpose switching and am plifier applications MM5682
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b3b72
MM5682
MIL-S-19500/xxx
O-116)
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TO206AB
Abstract: case 60-01
Text: MOTOROLA SC XSTRS/R F 4bE D b 3 b 72 54 0CH250S 5 «flO Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA DM0 Discrete Military Products NPN Silicon Sm all-Signal Transistor M M 4239 Suffixes: HX, H X V /////// Processed per MIL-S-19500/xxx d e s ig n e d for g e n e ra l-p u rp o se sw itc h in g an d am p lifie r ap p lica tion s
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0CH250S
MIL-S-19500/xxx
O-116)
TO206AB
case 60-01
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6 0 OHM This TMOS medium power field effect transistor is designed for
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OT-223
MMFT2406T1
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MJ8503
Abstract: MJ8502 MJ8504 J8503
Text: MOTOROLA SC 1EE 0 § b3fc.72S4 O O f l i m ? ^ | XSTRS/R F MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s Data. S h e e t S .0 A M P ER E N P N SILIC O N PO W ER T R A N S IS T O R S SW ITCH M O D E S ER IES NPN S ILICO N POW ER T R A N SIS T O R S
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MJ8502
MJ8503
Time-25Â
YI45M.
T0-204AA
MJ8504
J8503
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Untitled
Abstract: No abstract text available
Text: rZ Z ^7# S G S -T H O M S O N Mm^llJiCTB@mea BUV61 HIGH POWER NPN SILICON TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERIZED AT 125°C APPLICATION « SWITCHING REGULATORS . MOTOR CONTROL
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BUV61
BUV61
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Untitled
Abstract: No abstract text available
Text: GTR MODULE SILICON N CHANNEL IGBT MG25N1ZS1 HIGH POWER SWITCHING APPLICATIONS. Unit in nun MOTOR CONTROL APPLICATIONS. 3 -M 5 2 3 ± 0.5 2 3 ± 0 .S B 2 , FA S T -O N -T A B # I I P 2 - 0 5 .6 Í O .3 . High Input Impedance . High Speed tf=l.Ons Max. trr=0.5ys(Max.)
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MG25N1ZS1
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c 3198 transistor
Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
Text: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed
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----2N6384
2N6385
c 3198 transistor
2N6383
IC 6648
2N6648
sc 3198 transistor
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transistor j411
Abstract: MJ411 J410 mj411 transistor
Text: MOTOROLA SC XSTRS/R F H E D | b3b73S>. D O i l - lb ? 0 | / -/ J V J MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O L T A G E NPN SILICON T R AN SISTO R S 5 AM PERE . . . designed for medium to high voltage inverters, converters, regulators and switching circuits.
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b3b73S>
transistor j411
MJ411
J410
mj411 transistor
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T39 diode
Abstract: No abstract text available
Text: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,
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3b7254
IRFZ34/D
C65M2
IRFZ34
T39 diode
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2N3422
Abstract: 2N3442 2n4347 2N4327 C0440
Text: MOTOROLA SC XSTRS/R F 1EE D | b3b72SM G0â44b0 MOTOROLA r - 3 3 -/ 3 T | 2N3442 2N4347 SEMICONDUCTOR TECHNICAL DATA 5.0 AND 10 AMPERE POWER TRANSISTORS NPN SILICON HIGH-POWER INDUSTRIAL TRANSISTORS 1 2 0 ,1 4 0 V O L T S 1 0 0 ,1 1 7 W A T T S NPN silicon power transistors designed for applications in
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b3b72SM
2N3442
2N4347
2N4347
2N3442
2N3422
2N4327
C0440
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teg 105 kpa
Abstract: mpx4101
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPX4101 SERIES In teg rated Silicon Pressure Sensor M anifold Absolute Pressure Sensor O n-Chip Signal Conditioned, Tem perature Com pensated and C alibrated INTEGRATED PRESSURE SENSOR 15 to 102 kPa 2.18 to 14.8 psi
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MPX4101
PX4101A
PX4101AP
MPX4101A
PX4101
teg 105 kpa
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ATC 2603
Abstract: te 2443 MOTOROLA transistor 08BSC NS 8002 1151 MD3468
Text: MOTOROLA SC XSTRS/R F 4bE ]> b3 b?2 54 0 0^ 24 34 MOTOROLA 5 M 0 T b T -H 3 -¿ 5 SEMICONDUCTOR TECHNICAL DATA ( Discrete Military Products P N P S ilic o n Dual/Quad Sm all-Signal T ra n sisto rs Dm mini MD3468 MD3468F (Duals) MHQ3468 MQ3468 (Quads) . . . designed fo r g en era l-p u rp o s e a m p lifie r and sw itch in g applications. M atc h e d devices
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MD3468
MD3468F
MHQ3468
MQ3468
MIL-S-19500/348
O-116)
ATC 2603
te 2443 MOTOROLA transistor
08BSC
NS 8002 1151
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THT bsc 25
Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
Text: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS
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BUT15
THT bsc 25
but15
BM 1313 diode
2SC1020
NT 407 F TRANSISTOR
transistor 3405 npn
SV0200
M70 IBM
sm 0038
3408 diode
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p 477
Abstract: TO206AA
Text: MOTOROLA SC X S T R S / R F MOTOROLA 4bE ]> b3b?2S4 00=15401, 7 " '3 3 - / S ' S MOTb S E M IC O N D U C T O R TECHNICAL DATA M JM 3716 DM0 Discrete M ilita ry Products NPIM S ilic o n P o w e r T r a n s is t o r m Suffixes: HX, HXV in i Processed per
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MIL-S-19500/408
O-116)
p 477
TO206AA
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sm 0038
Abstract: K 1113 BDY58 Transistor 126 BUV10N transistor 12E transistor 1B
Text: MOTOROLA SC XSTRS/R 12E D | F b 3 b 7 2 S4 GGâM â? T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25 AM PERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high current, high speed, high power applications.
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b3b72S4
20atlc
BDY58
AN415A)
sm 0038
K 1113
BDY58
Transistor 126
BUV10N
transistor 12E
transistor 1B
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BU208
Abstract: POT CORE 4229P-L00 transistor bu208 4229PL00-3C8
Text: M OTOROLA SC X ST R S/R F MOTOROLA BU207 BU208 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTORS 1300 AND 1500 VOLTS HORIZONTAL DEFLECTION TRANSISTOR . . . specifically designed for use in large screen color deflection
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BU207
BU208
BU208
14-MAXIMUM
POT CORE 4229P-L00
transistor bu208
4229PL00-3C8
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R 4bE D F b3b?2S4 o o m i n 7 " F 3 3 -C Í7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6080 The RF Line 4.0 W - 175 MHz R F POW ER T R A N S IS T O R N P N S IL IC O N R F P O W E R T R A N S IS T O R NPN SILICON designed fo r 12.5 V o lt V H F large-signal pow er a m plifie r a pplica
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2N6080
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BUV 12
Abstract: buv12
Text: MGTORCLA SC X S T R S /R F 12E O I b3b?554 OQflMflat 0 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.
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