TO206AB Search Results

IS2-1009RH-Q

Abstract: 5962F0052301VYC IS2-1009RH-8 5962F0052301QXC 5962F0052301VXC IS-1009RH ISYE-1009RH-8 ISYE-1009RH-Q TO-206AB SMD TRANSISTOR FL
Contextual Info: IS-1009RH TM Data Sheet Radiation Hardened 2.5V Reference TM The Star*Power Radiation Hardened IS-1009RH is a 2.5V shunt regulator diode designed to provide a stable 2.5V reference over a wide current range. The device is exceptionally stable over a wide current range

5962F0052301VYC

Abstract: 5962F0052301VXC 5962F0052301QXC IS-1009RH BS1361 IS2-1009RH-Q IS2-1009RH-8 TO-206AB 52301V F00523V
Contextual Info: IS-1009RH Data Sheet FN4780.4 January 27, 2006 Radiation Hardened 2.5V Reference Features The Star*Power Radiation Hardened IS-1009RH is a 2.5V shunt regulator diode designed to provide a stable 2.5V reference over a wide current range. • Electrically Screened to SMD # 5962-00523

TO206AB

Abstract: TO-206AB ansi y14.5m
Contextual Info: Hermetic Packages for Integrated Circuits Metal Can Packages Can T3.B SEATING PLANE 3 Lead Metal Can Package TO-206AB (TO-46) A e1 L INCHES SYMBOL ØD k e ØD1 F α Øb j NOTES: 1. Measured from maximum diameter of the actual device. 2. Measured from tab centerline.

2n3735

Abstract: 2N3734 2N3725
Contextual Info: MOTOROLA SC XSTRS/R F 15E 0 I b3l.7254 Q0flb3fc.l 7 | MAXIMUM RATINGS Symbol Rating 2N373S 2N3734 2N3737 Collector-Emitter Voltage VCEO 30 50 Vdc Collector-Base Voltage VCBO 50 75 Vdc Emitter-Base Voltage Ve b O Collector Current — Continuous •c 2N3734

JANSL 2N3019S

Abstract: JANS2N3700UB 2n3019 equivalent
Contextual Info: JANS_2N3019 and JANS_2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

IR 92 0151

Abstract: MM5680 to204ae
Contextual Info: HOTOROLA SC XSTRS/R F ML E ^ 7 2 5 4 D 00*52507 b • MOTt,* p £ ? - Z t MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA Discrete Military Products PNP Silicon Sm all-Signal Transistor DM0 /I///// . . . designed for general-purpose switching and am plifier applications

NS 8002 1151

Abstract: TO-66 CASE
Contextual Info: M O T O R O L A SC XST RS/ R F EbE D b 3b 7E 5 4 G G m 4 3 4 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M JM 3792 DM0 Discrete Military Products Suffixes: HX, H X V m in t PIMP Silicon Pow er Transistor Processed per MIL-S-19500/379 . designed for medium-speed switching and amplifier applications

245A-02

Contextual Info: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per

5962F0052301VXC

Abstract: 5962F0052301QXC 5962F0052301VYC IS-1009RH IS2-1009RH-8 IS2-1009RH-Q ISYE-1009RH-8 ISYE-1009RH-Q FN4780
Contextual Info: IS-1009RH Data Sheet September 13, 2005 FN4780.3 Radiation Hardened 2.5V Reference Features The Star*Power Radiation Hardened IS-1009RH is a 2.5V shunt regulator diode designed to provide a stable 2.5V reference over a wide current range. • Electrically Screened to SMD # 5962-00523

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2N2946A

Abstract: 2N2945A 2945A 400D 376 motorola 2N2945 K/2N2945A-T57
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | t3f c,75S4 Rating Collector-Base Voltage Emitter-Base Voltage Sym bol 2N2945A 2N2946A Unit Veco 20 35 Vdc V cB O 25 40 Vdc vebo 25 40 Vdc Collector Current — Continuous ic 100 mAdc Total Device Dissipation @ T/\ = 25°C Derate above 25°C

2N2369A

Abstract: 2N2369AUBC 2N2369AU 2N4449 2N2369AUA 2N2369AUB C545C 317 TRANSISTOR
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/317 DEVICES LEVELS 2N2369A 2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC *

2N2946

Abstract: TO206AB 2N2944 2N2945
Contextual Info: MOTOROLA SC -CXSTRS/R » F | b 3 b 7254 a o a a m t s F> 6 3 6 7 2 54 M OT O R O L A SC XSTRS/R 96D F 82146 D T 'Z JV î — 2N2945 2N2946 M A XIM U M RATINGS Rating Sym bol 2N2945 2N2946 Unit Emitter-Collector Voltage v ECO 20 35 Vdc Collector*Base Voltage

2N869A

Abstract: 2N869A JAN 2N4453 2N869A JANTX TO206AA 313 Motorola
Contextual Info: MO T O R O L A SC X S TR S/ R F 12E D | b3b72S4 Q O Ö b a S 1» T-Z7-IS 2N869A M A X IM U M R A T IN G S R ating C o llector-E m itter Voltage Sym bol 2N869A 2N4453 U n it VcEO 18 18 Vdc Vdc 25 C o llector-E m itter Voltage VcES Collector-Base Voltage V cB O

Contextual Info: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 423 Devices Qualified Level 2N5581 JAN JANTX JANTXV 2N5582 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

2N2345

Abstract: 2n2945 2N2946 TO206AB
Contextual Info: MOTORCLA SC XSTRS/R F 12e O | ^3^7554 QOflbSfl*! 4 | T-37-33 2N2945 2N2946 MAXIMUM RATINGS Sym bol 2N2945 2N2946 U n it Em itter-C o llecto r V oltag e V e CO 20 35 Vdc C o llector-B ase V olta g e VCBO 25 40 Vdc Em itter-Base V oltag e Vebo 25 40 Vdc R ating

itt 2907A

Abstract: st 2n 2907a 2N2905 MOTOROLA itt 2907 2N2907A itt 2n2222 2n2907 Motorola st 2n 2905a 2N3485 2N2907 2N2907A
Contextual Info: MOTORCLA SC XSTRS/R F 12E D I b3fc.72S4 G0flb57fci 5 | PNP SILICON AN N U LAR HERMETIC TRAN SISTO RS 2N2904, A thru . . designed for high-speed sw itching circuits, D C to V H F amplifier applica­ tions and com plem entary circuitry. 2N2907, A 2N3485, A, 2N3486, A

Contextual Info: TECHNICAL DATA PNP SILICON SMALL SIGNAL TRANSISTOR Qualified per MIL-PRF-19500/ 392 Devices Qualified Level 2N3485A JAN JANTX JANTXV 2N3486A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous

Contextual Info: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability

2N2605

Abstract: 2N2604 TO206AB
Contextual Info: TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices Qualified Level 2N2604 MAXIMUM RATINGS Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation JAN, JANTX

2N2369A

Abstract: 2N4449 2N2369AU 2N4449UB 2N2369AUA 2N2369AUB 2N4449U 2N4449UA
Contextual Info: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices 2N2369A 2N2369AU 2N2369AUA 2N2369AUB Qualified Level 2N4449 2N4449U 2N4449UA 2N4449UB JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage

2n2369a

Abstract: uA 741 IC OF IC 741 TO206AB
Contextual Info: TECHNICAL DATA MIL-PRF 2N2369A, U, UA, JAN, JTX, JTXV 2N2369AUB JAN, JTX, JTXV 2N4449, U, UA, JAN, JTX, JTXV QML DEVICES Processed per MIL-PRF-19500/317 NPN SWITCHING SILICON TRANSISTORS 2N2369A 2N4449 TO-18 TO-206AA TO-46 (TO-206AB) MAXIMUM RATINGS Ratings

EIA-418D

Contextual Info: 2N2944AUB – 2N2946AUB PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944AUB through 2N2946AUB PNP silicon transistor device is military qualified up to