NROM16EE
Abstract: No abstract text available
Text: NROM16EE SAIFUN PROPRIETARY 16Mbit 2M x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM16EE is a 16Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is
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NROM16EE
16Mbit
NROM16EE
16Mbits
128-byte
111-1111-11H1-XXXX-XXXX
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A1815
Abstract: 10101B 10010b
Text: NROM4EE SAIFUN PROPRIETARY 4Mbit 512K x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM4EE is a 4Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is typically
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128-byte
10111B
11000B
11001B
11010B
11011B
11100B
11101B
11110B
11111B
A1815
10101B
10010b
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serial vs parallel communication
Abstract: 200B AN551 DK-2750 RG41
Text: Serial EEPROM Solutions vs. Parallel Solutions AN551 Serial EEPROM Solutions vs. Parallel Solutions In searching for solutions to their system non-volatile memory requirements, equipment, systems and product designers are faced with a plethora of design related
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AN551
serial vs parallel communication
200B
AN551
DK-2750
RG41
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IEEE1284
Abstract: ieee1284 usb oxford ps2 controller PCI840
Text: PCI840 The PCI Parallel Port Classic 1394 Firewire USB 2.0 PCI Bus Controller Evolving Standards EEPROM Interface Parallel Port The Oxford PCI840 integrates a comprehensive parallel port and bridge to PCI. Key features 33MHz, 32-bit target PCI controller Assurance of inter-operability.
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PCI840
PCI840
33MHz,
32-bit
IEEE1284
CA92691,
ieee1284 usb
oxford
ps2 controller
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M29W040
Abstract: M39432 4Mbit eeprom
Text: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY DATA BRIEFING 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while
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M39432
120ns
M39432
EEPR0-A18
120ns
150ns
200ns
250ns
TSOP40
M29W040
4Mbit eeprom
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M29W040
Abstract: M39432
Text: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while
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M39432
120ns
M39432
M29W040
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4mbit eprom
Abstract: 4Mbit eeprom 4mbit otp M29W040 M39432 AI01946
Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory DATA BRIEFING 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME Flash and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while
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M39432
120ns
M39432
120ns
150ns
200ns
250ns
TSOP40
AI01947
4mbit eprom
4Mbit eeprom
4mbit otp
M29W040
AI01946
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X84041
Abstract: X84041P
Text: MPS EEPROM X84041 4K Micro Port Saver EEPROM FEATURES DESCRIPTION • Direct interface to micros —Eliminates I/O port requirements —No interface glue logic required —Eliminates need for parallel to serial converters • 3.3Mbps data transfer rate
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X84041
14-lead
X84041
4096-bit
X84041P
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Untitled
Abstract: No abstract text available
Text: M39208 Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory PRELIMINARY DATA • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 100ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while
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M39208
100ns
TSOP32
M39208
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Untitled
Abstract: No abstract text available
Text: M39432 Single Chip 4 Mbit Flash and 256Kbit Parallel EEPROM Memory PRELIM IN ARY DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while
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M39432
256Kbit
120ns
M39432
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652 MPS A13
Abstract: description of power saver block diagram X84256 X84256BI X84256Z X84256ZI
Text: MPS EEPROM X84256 256K µPort Saver EEPROM FEATURES DESCRIPTION • 10MHz data transfer rate • 30ns read access time • Direct interface to microprocessors and microcontrollers —Eliminates I/O port requirements —No interface glue logic required —Eliminates need for parallel to serial converters
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X84256
10MHz
--64-byte
--14-lead
652 MPS A13
description of power saver block diagram
X84256
X84256BI
X84256Z
X84256ZI
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BP01
Abstract: M44C260 M48C260
Text: M48C260 TELEFUNKEN Semiconductors MARC4 – 4-bit Microcontroller The M48C260 is a member of the TEMIC family of 4-bit single chip microcontrollers. It is the user programmable version of the M44C260. It contains EEPROM program memory, RAM, EEPROM data memory, parallel I/O ports,
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M48C260
M48C260
M44C260.
8/16-bit
D-74025
BP01
M44C260
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M39432
Abstract: 4mbit tsop40
Text: M39432 Single Chip 4 Mbit Flash and 256Kbit Parallel EEPROM Memory P R E L IM IN A R Y DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while
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M39432
256Kbit
120ns
TSOP40
M39432
4mbit tsop40
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Untitled
Abstract: No abstract text available
Text: PSTSIIgI EEPROMS M ic r o c h ip Parallel EEPROM Selection Guide CMOS Parallel EEPROMs Access Time ns Icc (Active/ Standby) 4K bits (512x8) 150/200/250 30mA/100nA 16K bits (2K X 8) 150/200/250 30 mAflOO nA Device Density/ Organization 28C04A 28C16A Byte
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30mA/100nA
A/100
A/100
28C04A
28C16A
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M44C260
Abstract: M48C260 0014D1 EPI EEPROM CPU AGB A
Text: Tem ic M48C260 TELEFUNKEN Semiconductors MARC4 - 4-bit Microcontroller The M48C260 is a member of the TEMIC family of 4-bit single chip microcontrollers. It is the user programmable version of the M44C260. It contains EEPROM program memory, RAM, EEPROM data memory, parallel I/O ports,
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m48c260
M48C260
M44C260.
8/16-bit
D-74025
0D14034
M44C260
0014D1
EPI EEPROM
CPU AGB A
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smema
Abstract: smema control 500VA 5830 smema specifications
Text: 5830+ In-line On-board Programmer Key features Memory device types • Program up to 30 like devices in parallel • FLASH • Program unique or generic data • EEPROM • Erase, program and verify the data • MCU • Parallel programming of various devices types
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600mm
900mm
smema
smema control
500VA
5830
smema specifications
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NM28C64EN28
Abstract: NM28C64N28 NM28C64T28 C64L
Text: . J PRELII Semiconductor NM28C64/C64L/C64A 64k 8k x 8 Parallel Extended Voltage Range CMOS EEPROM General Description Features The NM28C64/C64L/C64A are fast, single-power supply CMOS EEPROM organized as 8 k by 8 bits. Both READ and WRITE modes function over the full Vqc range of 2.7V 5.5V.
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NM28C64/C64L/C64A
NM28C64/C64L/C64A
tl/d/12398-9
tl/d/12398-10
0D6753Q
tl/d/12398-11
bS011E2
NM28C64EN28
NM28C64N28
NM28C64T28
C64L
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GU34
Abstract: No abstract text available
Text: MC512E8 512K x 8 EEPROM Module Issue 1.3 December 2007 General Description Features The MC512E8 is a 512K x 8 parallel EEPROM module available in 32 pin ceramic J-leaded package. The 5V Vcc device is available with access times of 150, 200 or 250ns at commercial, industrial or military
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MC512E8
MC512E8
250ns
MIL-STD-883.
M512E8
250ns.
150ns
200ns
GU34
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spi flash m25pxx
Abstract: M25PXX M25P10 TA245 ST M25P10
Text: TA245 TECHNICAL ARTICLE The Code Shadowing Approach: Choose The Correct Non-Volatile Memory Yvon Bahout, EEPROM and Serial NVM Division, Application Lab Manager, STMicroelectronics, Rousset significantly shorter than those for NVM. The access time of a standard parallel Flash is today
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TA245
spi flash m25pxx
M25PXX
M25P10
TA245
ST M25P10
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Untitled
Abstract: No abstract text available
Text: Main Menu CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.
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CAT28C64B
64K-Bit
90/120/150ns
CAT28C64B
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94c46
Abstract: 94LC46 93c46 wp interfacing 93LC46 85C72 24C04A 24LC01B 24LC04B 24LC16B 85C92
Text: Questions and Answers Concerning Serial EEPROMs AN572 Questions and Answers Concerning Serial EEPROMs Interfacing a serial EEPROM to a controller can be a confusing task, especially for first time users. Because communication with a parallel memory device is more
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AN572
94c46
94LC46
93c46 wp
interfacing 93LC46
85C72
24C04A
24LC01B
24LC04B
24LC16B
85C92
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M28C64C
Abstract: M28C64X PDIP28 PLCC32
Text: M28C64C M28C64X PARALLEL ACCESS 64K 8K x 8 EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION – Active Current 30mA – Standby Current 100µA FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms
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M28C64C
M28C64X
150ns
M28C64C
M28C64X
PDIP28
PLCC32
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On Delay Timer
Abstract: EEPROMs
Text: Parallel EEPROM Data Protection Advantages of EEPROMs EEPROMs provide the memory solution wherever reprogrammable, nonvolatile memory is required. They are easy to use, requiring little or no support hardware such as refresh clocks or batteries. Each memory location can be selectively
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0543C
10/98/xM
On Delay Timer
EEPROMs
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Untitled
Abstract: No abstract text available
Text: SCS-THOMSON 5 M28C16 Ï . K fflO [iM iLI S ¥M jïO © S _ PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW FAST ACCESS TIME: 70ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION: - Active Current 30mA - Standby Current 100|iA FAST WRITE CYCLE:
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M28C16
PDIP24
PLCC32
7T2TE37
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