EEPROMS Search Results
EEPROMS Price and Stock
ROHM Semiconductor BR93A76RFJ-WME2EEPROM LOW NOISE OPER AMPLIFIER |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BR93A76RFJ-WME2 | Reel | 2,500 |
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EEPROMS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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eeprom Cross Reference
Abstract: S524A60X81-SC S524L50X51 IS24C16-2G equivalent IS24C02-3ZI IS25C64-2Z IS93C46 m93c46 st diode cross reference S524A40X10-RC
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CREESAMS/0702 eeprom Cross Reference S524A60X81-SC S524L50X51 IS24C16-2G equivalent IS24C02-3ZI IS25C64-2Z IS93C46 m93c46 st diode cross reference S524A40X10-RC | |
Contextual Info: EEPROM Reliability The reliability of AMD's NS-18 process used in the fabrication of 64K EEPROMs is described in this report. The reliability monitors used at AMD were designed to predict the future operating life results by accelerat ing failure rates. The monitors include data from endur |
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NS-18 Am2864AE/BE Am2864B | |
Contextual Info: M95080-A125 M95080-A145 Automotive 8-Kbit serial SPI bus EEPROMs with high-speed clock Datasheet - production data Features • Compatible with the Serial Peripheral Interface SPI bus SO8 (MN) 150 mil width TSSOP8 (DW) 169 mil width WFDFPN8 (MF) 2 x 3 mm |
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M95080-A125 M95080-A145 DocID024205 | |
ST10F275
Abstract: ST10F273
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AN2061 ST10F2xx ST10F2xx DocID10945 ST10F275 ST10F273 | |
STK25C48Contextual Info: STK25C48 2K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Designs FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 2K x 8 Static RAM, BatteryBacked RAM or EEPROMs |
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STK25C48 200ns 100-Year 24-Pin STK25C48 ML0005 Sn/15 | |
Contextual Info: M ic r o c h ip 2 4 C 8 B / 1 6 B 8K/16K 5V E-Temperature Serial EEPROMs FEATURES DESCRIPTION • Single supply with operation from 4.5-5.5V • Low power CMOS technology — 1 mA active current typical — 10 nA standby current typical at 5.5V • Organized as 4 or 8 blocks of 256 bytes 4 x 256 x 8 |
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8K/16K DS21081A-page blG3201 24C08B/16B 24CXXB 24C16B 24C16BT 24C08B 24C08BT | |
Contextual Info: 2 4 C 0 1 A / 0 2 A /0 4 A 1K/2K/4K 5V CMOS Serial EEPROMs FEATURES DESCRIPTION • • • • • • • • • • • The Microchip Technology Inc. 24C01A/02A/04A is a 1K/2K/4K bit Electrically Erasable PROM. The device is organized as shown, with a standard two wire serial |
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24C01A/02A/04A Uptofour24C01 /02A/04As 24C01A/02A 14-Lead, 24C04A DS11183A-page blD3201 | |
LV010
Abstract: LV020 ATMEL EEPROM 256 AT17C LV002
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AT17C/LV020 AT17C/LV002 LV010 LV020 ATMEL EEPROM 256 AT17C LV002 | |
BR24L02FJ-W
Abstract: BR24L02FVM-W BR24L02FV-W BR24L02F-W BR24L02-W BR24L04 BR24L08 BR24L16
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BR24L02-W BR24L02F-W BR24L02FJ-W BR24L02FV-W BR24L02FVM-W BR24L02FJ-W BR24L02FVM-W BR24L04 BR24L08 BR24L16 | |
AN619
Abstract: microchip eeprom interface AN536 AN560 PIC16C54 PIC16C5X AN-619
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AN619 93XX76 93XX86 PIC16C5X 16k-bit 93XX46, 93XX56 93XX66 AN619 microchip eeprom interface AN536 AN560 PIC16C54 PIC16C5X AN-619 | |
toshiba eSD memoryContextual Info: Memories and Storage Devices Serial EEPROM Series z 56 55 Serial EEPROM Series Overview The TC9WM series is a family of low-capacity serial EEPROMs housed in standard, ultra-small leaded packages – US8, or SM8 which is pin-compatible with the industry-standard MSOP8 package. Thus, |
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200B
Abstract: AN602 DK-2750 RG41
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AN602 200B AN602 DK-2750 RG41 | |
SO8 Wide Package
Abstract: 1205 SO8 4463 SO8 WIDE TSSOP8 texas M24128 M24256 M24256A M24C01 M24C02
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286-CJ103 SO8 Wide Package 1205 SO8 4463 SO8 WIDE TSSOP8 texas M24128 M24256 M24256A M24C01 M24C02 | |
f 93c66
Abstract: 93C46 93C66 93C57 93c66 6 93C86 93C46 DATASHEET 93C56 TEW JAPAN
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AND8429/D MD-6000 f 93c66 93C46 93C66 93C57 93c66 6 93C86 93C46 DATASHEET 93C56 TEW JAPAN | |
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Contextual Info: SEM ICONDUCTOR TM NM24C04U/NM24C05U 4K-Bit Serial EEPROM 2-Wire Bus Interface General Description Functions The NM 24C04U/05U devices are 4K 4,096 bit serial interface CM OS EEPROMs (Electrically Erasable Program mable ReadO nly M emory). These devices fully conform to the Standard l2C |
OCR Scan |
NM24C04U/NM24C05U 24C04U/05U | |
BR24L04
Abstract: BR24L08 BR24L08FJ-W BR24L08FVM-W BR24L08FV-W BR24L08F-W BR24L08-W BR24L16
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BR24L08-W BR24L08F-W BR24L08FJ-W BR24L08FV-W BR24L08FVM-W BR24L08FJ-W BR24L04 BR24L08 BR24L08FVM-W BR24L16 | |
M95M01-A125Contextual Info: M95M01-A125 M95M01-A145 Automotive 1 Mbit serial SPI bus EEPROMs with high-speed clock Datasheet − preliminary data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 1 Mbit (128 Kbytes) of EEPROM – Page size: 256 bytes |
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M95M01-A125 M95M01-A145 | |
Contextual Info: S E M IC O N D U C T O R TM NM24C02U/NM24C03U 2K-Bit Serial EEPROM 2-Wire Bus Interface General Description Functions The NM 24C02U/NM 24C03U are 2K 2,048 bit serial interface CM OS EEPROMs (Electrically Erasable Program mable ReadO nly M emory). These devices fully conform to the Standard l2C |
OCR Scan |
NM24C02U/NM24C03U 24C02U/NM 24C03U | |
Contextual Info: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs |
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DS1730Y/YLPM 28-pin DS1730Y) 2bl4130 DD10771 DS1730YLPM 34-PIN 68-pin | |
Contextual Info: ^ÊÊÊk>m M t o ic r o c h ip 24LC01SC/02SC 1K/2K 2.5V I2C Serial EEPROMs for Smart Cards FEATURES DIE LAYOUT • ISO Standard 7816 pad locations • Low power CMOS technology - 1 mA active current typical - 10 |iA standby current typical at 5.5V - 5 |iA standby current typical at 3.0V |
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24LC01SC/02SC 100kHz 400kHz 24LC01SC/02SC 24LC02SC 24LC01SC blD32Dl DS21171A-page | |
Contextual Info: M 2 4 C 0 8 B/ 1 6 B ic r o c h ip 8K/16K 5.0V E-Temperature Serial EEPROMs PACKAGE TYPE FEATURES • Single supply with operation from 4.5-5.5V DIP • Low power CMOS technology A0 C 1 8 H Vcc Al C 2 7 □ WP A2 C 3 6 □ SCL [I 5 □ SDA - 1 mA active current typical |
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8K/16K 24C08B/16B DS21081C-page | |
Contextual Info: 24AA04/08 M ic r o c h ip 4K/8K 1.8V I2C Serial EEPROMs FEATURES PAC KAG E T Y P E S DIP • Single supply with operation down to 1.8V • Low power CMOS technology - 1 mA active current typical - 10 jA standby current typical at 5.5V - 3 nA standby current typical at 1.8V |
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24AA04/08 14-lead 24AA04 24AA04T 24AA08 24AA08T | |
Contextual Info: 24A M ic r o c h ip 1KI2K A 1.8V CMOS Serial EEPROMs 0 1 /0 2 FEATURES DESCRIPTION • Single supply with operation down to 1,8V • Low power CMOS technology — 1m A active current typical — 10 iA standby current typical at 5.5V — 3 nA standby current typical at 1.8V |
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24AA01 24AA01T 24AA02 24AA02T DS21052C-page bl03501 | |
KKF8594EContextual Info: TECHNICAL DATA KKF8594E 512 x 8-bit CMOS EEPROMS with I2Cbus Interface The KKF8594E is а 4-Kbit 512 х 8-bit floating gate electrically erasable programmable read only memory (ЕЕРPROM). By using an internal redundant storage code it is fault tolerant to single bit errors. This feature dramatically |
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KKF8594E KKF8594E 001BA) |