EEPROM FLOTOX Search Results

Contextual Info: A HIGH-DENSITY DUAL-POLYSILICON 5 VOLT-ONLY EEPROM CELL R. Lambertson, A. Malazgirt, C. Lo, A. Vahidimowlavi, P. Holland, M. Fliesler, H. Gee Xicor Inc, 851 Buckeye Court, Milpitas, California, 95035 ABSTRACT In this paper a novel full-function EEPROM cell

AK6416A

Abstract: AK93C12A AK93C10 Hex schmitt trigger ecl NATIONAL LINEAR VOL2 AK93C10AF NATIONAL LINEAR VOL1 93c45a AN0050
Contextual Info: DATASHEET Microwire type . SCI type Serial Communication Interface . I2C™ type . DAC+EEPROM .

28CXX

Abstract: 28C64 28C64 EEPROM 93CXX 200B 24LC16 AN601 28Cxxx
Contextual Info: AN601 EEPROM Endurance Tutorial Author: BASIC TERMS David Wilkie Reliability Engineer INTRODUCTION The endurance of an EEPROM-based device will be quoted by a manufacturer in terms of the minimum number of erase/write cycles write cycles that the device is capable of sustaining before failure. A write

AN2014

Abstract: M93C stmicroelectronics eeprom
Contextual Info: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data. There is no single memory technology (SRAM, DRAM, EEPROM, Flash Memory, EPROM,

AN2014

Abstract: RL 66 EEPROM SCR POWER SUPPLY SPI EEPROM code flow diagram EEPROM stmicroelectronics "serial eeprom" stmicroelectronics traceability M93C stmicroelectronics eeprom
Contextual Info: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data. There is no single memory technology (SRAM, DRAM, EEPROM, Flash Memory, EPROM,

Contextual Info: SGS-THOMSON M9306 •LlêïïO M O igS 256 BIT 16x16 SERIAL NMOS EEPROM SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V±10%) TTL COMPATIBLE 16 x16 READ/WRITE MEMORY LOW STANDBY CURRENT LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY RELIABLE FLOTOX PROCESS

microchip eeprom

Abstract: EEPROM 24LC256 24LC256 AN1019 JESD47 MICROCHIP AN1019 JESD-47
Contextual Info: AN1019 EEPROM 耐擦写能力教程 作者： David Wilkie Microchip Technology Inc. 基本术语 “耐擦写能力 （Endurance）”（指 EEPROM）的定义 中包含一些需要明确定义和理解的词语和短语。从以下 段落可以看出，不同厂商使用不同的标准。“耐擦写循

AN2014

Abstract: stmicroelectronics eeprom AI-117 QNEE9801 stmicroelectronics serial eeproms
Contextual Info: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Introduction Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data.

EEPROM retention testing

Abstract: 24LC256 AN1019 JESD47 MICROCHIP AN1019
Contextual Info: AN1019 EEPROM Endurance Tutorial Microchip uses a more stringent criteria for endurance: Author: David Wilkie Microchip Technology Inc. BASIC TERMS The definition of “endurance” as applied to EEPROMs contains various words and phrases that require clear

Contextual Info: M9346 ADVANCE DATA 1024 BIT 64 x 16 SERIAL EEPROM • • • • • • • • • LOW COST SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V=t 10%) TTL COMPATIBLE 6 4 x 1 6 READ/WRITE MEMORY LOW STANDBY POWER NON-VOLATILE ERASE AND WRITE RELIABLE FLOTOX PROCESS

eurosil clock

Abstract: eurosil EUROSIL ELECTRONIC GMBH Eurosil Electronic Block Diagram of 8057 E6220 Z6220PC
Contextual Info: SEP £ fJJ EUROS1L 66220 3 â e c ~ r o m c 64 BIT SERIAL EEPROM FOR LOW VOLTAGE APPLICATIONS Features • • • • • • • • • Pad configuration 2.5 V operation for programming 1.3 V operation for reading

M9306B1

Abstract: M9306 M9306B1-B6
Contextual Info: as 256 BIT 1 6 x16 SERIAL EEPROM • • • • • • • • LOW COST SINGLE SUPPLY (5V ±10°/o) TTL CO M PATIBLE 1 6 x 1 6 READ/W RITE M EM O RY LOW STANDBY POWER NON-VOLATILE RELIABLE FLOTOX PROCESS EXTENDED TEM PERATURE RANGE ^ ’ I 1 8 F M Plastic

eurosil

Abstract: eurosil clock EUROSIL ELECTRONIC GMBH Eurosil Electronic Z6210PC Block Diagram of 8057 e6210
Contextual Info: e e6210 64 BIT SERIAL EEPROM Pad configuration Features • 64 bit serial organisation • • • • • Bits individually addressable 2 Volt operation 100 000 erase/write cycles Self timed programming cycle 10 nA typ stand-by current ss J] CLK ;~3 JÌ

FZj 111

Abstract: M9346B1 M9346B6 M9346M1 M9346M6
Contextual Info: SGS-THOMSON M9346 ¡y 1024 BIT 64 x 16 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V±10°/o) ■ TTL COMPATIBLE ■ 6 4 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY

M9306M6

Abstract: M9306 M9306B1 M9306B6 M9306M1
Contextual Info: f Z J SGS-THOMSON M9306 256 BIT 16x 1 6 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V ± 10%) ■ TTL COMPATIBLE ■ 1 6 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT V * ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY

M9346B1

Abstract: poo1 M9346B6 M9346M1 M9346M6
Contextual Info: T/ SGS-THOMSON M9346 ilL ir a M O ig S 1024 BIT 6 4 x 16 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V±10°/o) ■ TTL COMPATIBLE ■ 6 4 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY

28CXX

Abstract: EEPROM flotox 24C02A 24C04A 24CXX 24LCXX 93CXX sem 2107
Contextual Info: EEPROM Endurance INTRODUCTION Circuit Technology These cells are then structured in either an 8 or 16 bit word organization for data storage with between 32 words 256 byte device and 8K words (64K device) using standard binary decoding schemes found industry wide on memory devices. Data can then be transmitted either into the device for storage or read from the

24C02A

Abstract: 24C04A 24CXX 24LCXX 28CXX 93CXX EEPROM flotox
Contextual Info: EEPROM Endurance INTRODUCTION Circuit Technology These cells are then structured in either an 8 or 16 bit word organization for data storage with between 32 words 256 byte device and 8K words (64K device) using standard binary decoding schemes found industry wide on memory devices. Data can then be transmitted either into the device for storage or read from the

M9306B1

Abstract: M9306B6 m9306
Contextual Info: F Z J * 7 #« S G S -T H O M S O N [ * K [ l L [ i § ¥ [ i » 0(gS M 9306 256 BIT (16x16 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V ± 10%) ■ TTL COMPATIBLE ■ 1 6 x 1 6 READ/WRITE MEMORY . X ■ LOW STANDBY CURRENT ■ LOW COST SOLUTION FOR NON VOLATILE

s2914a

Abstract: ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45
Contextual Info: データシート マイクロワイヤー TMタイプ . SCIタイプ（Serial Communication Interface） . I2CTMタイプ .

hot electron devices

Abstract: SGS-Thomson ball grid array VLSI Vision
Contextual Info: CHAPTER 6 TOWARDS THE FUTURE “Tomorrow will differ from yesterday. It will be new and depend on us. It is to be invented more than discovered” 6.1 VISION Vision 2000 By the year 2000, be among the top world suppliers and be recognized as the “best-inclass” in service and environmental protection,

stc 8000 h

Contextual Info: bDE D SHARP CORP • filfiOTTfl OODTSSS 156 « S R P J 7 ^ - ‘? 4 NEW PRODUCT INFORMATION LH6N00 ■ CMOS 256K 32Kx8-btt Non-Volatile Dynamic RAM Description Pin Connections The LH6N00 is a high speed 256K (32Kx8) bit pseudo-static NVRAM which is fabricated using Sharp

Contextual Info: SHARP CORP ,n r bDE i\ T> _ • „ Ô1ÛD7TÛ OGC H Sb B 224 «SRPJ T- HÌ-2 S- ^ 7 LH6N10/LH6N11 ■ CMOS 1M 128Kx8 Non-Volatile RAM Pin Connections Description The LH6N10/11 is a high speed 1M (128KX8) bit pseudo-static NVRAM which is fabricated using Sharp

SC-15

Abstract: EEPROM flotox Japanese Transistor Cross References
Contextual Info: u these components. In this paper, we will focus on the technology factors by comparing the three dom ­ inant E2 technologies to date, and giving our own viewpoint on the development in the market place. COMPARISON AND TRENDS IN TO DAY’S DOM INANT E2 TECHNOLOGIES