EEPROM 28C64 Search Results

M28F512-12C3

Abstract: 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64
Contextual Info: Main Menu September 2001 Cross Reference Guide Main Menu Main Menu Table of Contents Product Page Number Featured Product Information Serial EEPROM Atmel Fairchild Microchip ST Microelectronics Xicor 3-Wire/Microwire Serial EEPROM Atmel Microchip Fairchild

eeprom 2816

Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
Contextual Info: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel

28CXX

Abstract: 28C64 28C64 EEPROM 93CXX 200B 24LC16 AN601 28Cxxx
Contextual Info: AN601 EEPROM Endurance Tutorial Author: BASIC TERMS David Wilkie Reliability Engineer INTRODUCTION The endurance of an EEPROM-based device will be quoted by a manufacturer in terms of the minimum number of erase/write cycles write cycles that the device is capable of sustaining before failure. A write

28C64 EEPROM

Abstract: pd28c64 nec 28C64 27c eeprom
Contextual Info: m JUPD28C64 8192 X 8-Bit CMOS EEPROM e NEC Electronics Inc. Description Pin Configuration The^PD28C64 is a 65,536-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 8,192 x 8 bits and fabricated with an advanced CMOS process for high performance and tow power

ST93C86

Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
Contextual Info: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM

28C64AP

Abstract: 28C64A 28C64APC-2 hex55 ROM 8K x 8
Contextual Info: Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times

28C64A-15

Abstract: 28C64A ic 8870 ttl
Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K nonvolatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the

Contextual Info: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES -40°C to +85°C DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non­ volatile etectricaly Erasable PROM. The 28C64A is accessed ike a static RAM for the read orwrite cycles without

28C64 EEPROM

Abstract: eeprom 28c64 28c64 OB9028 K1909 6D9709 8823 2C9236 6B1999-1 6A9616
Contextual Info: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C64 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -DATA RETENTION BAKE (200°C) -CYCLE TEST -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -15 PSIG PRESSURE POT -85°C/85% RELATIVE HUMIDITY LIFE TEST

KM28C64A20

Abstract: KM28C64A-20
Contextual Info: KM28C64A/KM28C65A CMOS EEPROM 8 K /8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • Sim ple Byte W rite & Page W rite — Single TTL Level W rite Signal

M28C64

Abstract: M28C64-W PDIP28 PLCC32 S028
Contextual Info: SGS-THOMSON iyiEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION

Contextual Info: $ 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100nA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years

26c64

Abstract: 26C64A
Contextual Info: $ 28C64A M ic r o c h ip 64 K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non-volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte

M28C64

Abstract: M28C64-W PDIP28 PLCC32 S028
Contextual Info: SGS-THOMSON iyitEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION

Contextual Info: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 jxs or 1 ms • Data Retention >10 years

28C64A

Abstract: 28C64A-15 28C64A-20 28C64A-25 MS-011
Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write

28C64A

Abstract: A12C
Contextual Info: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years

Contextual Info: KM28C64A/KM28C65A CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • S im ple Byte W rite & Page W rite — Single TTL Level W rite Signal

Contextual Info: CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.

KM28C64A-20

Abstract: KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25
Contextual Info: SAMSUNG ELECTRONICS INC D • 7^4142 OOlböfiO TSS SflGK CMOS EEPROM KM28C64A/KM28C65A 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64AJ65A: Commercial — KM28C64AK65AI: Industrial • Simple Byte Write & Page Write

Contextual Info: 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 n-A Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write

Contextual Info: JÊ Ë Ê È L * & 28C64A M ig z r o n c h ip i 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms

1N914

Abstract: 28C64B 28C64B-12 28C64B-15 28C64B-90 CAT28C64B CAT28C64BGI-12T CAT28C64BGI-15T MAXS-100 CAT28C64BWI-12T
Contextual Info: CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.

28C64B

Abstract: CAT28C64B 1N914 28C64B-12 28C64B-15 28C64B-90 CAT28C64BNI-15T
Contextual Info: CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.