EDI8810H Search Results

Contextual Info: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)

transistor D883

Abstract: EDI8810HL e255 8KX8-Bit CMOS SRAM
Contextual Info: ^EDI _ EDI8810H/L Electronic D e sig n s I n o * Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic iUMDN Features The EDI8810H/L is a 65,653bit, 6 transistor cell CMOS Static RAM organized as 8Kx8. It is available in both standard H and low power (L)

HM6264ALP-10

Abstract: STATIC RAM 6264 FCB61C65-70 HM6264AP-15 HY6264 RAM HY62C64-55 HY62C64-70 DPS9264-120 DPS9264-150 DS1225AB-15
Contextual Info: - 86 - m DPS9264-120 DPS9264-150 DS1225AB-15 DS1225AB-20 DS1225AD-15 DS1225AD-2G DS1225Y-15 DS1225Y-20 EDI8810H-100 EDI8810H-120 EDI8810IM50 EDI8810H-55 EDI8810H-70 EDI8810H-85 EDI8810L-Î00 ED18810L-120 EDI8810L-150 EDI8810L'55 EDI8810L-70 EDI88101.-85 FCB61C65'45

ELECTRONIC DESIGNS INC 91 PAGE 343

Abstract: E2 SMD Transistor 5962-89598 EDI8810H EDI8810HL
Contextual Info: ^EDI _ EDI8810H/L Electronic Designs I n o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The EDI8810H/L is a 65,653bit, 6 transistor cell C M O S Static R A M organized a s 8Kx8. Random A cce ss Memory It is available in both standard H and low power (L)

Contextual Info: ^EDI EDI8810H/L Electronic D e s ig n s In o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic •lOiDi Features The EDI8810H/L is a 65,653bit, 6 transistor cell 8Kx8 bit C M O S Static Random A c ce ss Memory C M O S Static R A M organized a s 8Kx8.

FCB61C65-70

Abstract: HM6264ALP-10 HM6264ALP-12 FCB61C65-45 DS1225AD-2G FCB61C65L DPS9264-120 DPS9264-150 DS1225Y DS1225AB-20
Contextual Info: - 86 - m £ ít % CC TAAC max ns) TCAC max (ns) 6 4 K CMOS X + A TOE max (ns) TOH min (ns) V TOD (ns) '/ S t a t i c RAM (81 9 2 X 8 ) Í# f t TiP min (ns) TDS min (ns) m TDH min (ns) TWD min (ns) TWR ma): (ns) V D D or V C C (V) 2 8 P I N ÎDD max (mA)

ed18810

Abstract: 5962-3829453MTa QML-38535 5962-3829410MYX 5962-R085-93 IDT7164L70L32B 5962-3829412MXA GDIP1-T28 5C640 UT6717685
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added chanaes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frve F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.

edi8832

Abstract: EDI8834
Contextual Info: ^EDI Static RAM Selector Guide Electronic D««lgna Inc. Static RAMs for High Performance Systems, Commercial and Miilitary; Monolithic and Modules Electronic Designs Incorporated is a lead­ ing international supplierof high-performance, high-reliability Static RAM products to all seg­

HM1E

Abstract: 5962-3829435 IDT7164L70L32B mk48h64 5962-3829407MXX 62l64-45 HC6364 5962-8552505X QML-38535 IDT7164S55DB
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added changes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frye F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.

EDI8M8512L

Contextual Info: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28

dram zip 256kx16

Abstract: I8833C
Contextual Info: Electronic Design* Inc. Table of Contents Page Letter from the Table o f Contents . 2

QP7C185A-55DMB

Abstract: QP7C185A IDT7164L70L32B QP7C185A-70DMB qml-38535 MT5C6408C-20 5962-3829435 EDI8810L 0EU86 22 35L CAPacitor
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED E Added changes in accordance with NOR 5962-R085-93 93-03-16 M. A. Frye F Added device types 45, 46, and 47. Removed CAGE code 34168 for case outline 8, and added cage code 34168 for case outline 9. Editorial changes throughout.

64kx4 DRAM

Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
Contextual Info: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static

synchronous sram

Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Contextual Info: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK