ECEV1HV100R Search Results

ERIE CAPACITORS

Abstract: SAHA Mica capacitors MRF658 erie capacitor SAHA trimmer 3-30 pf nippon capacitors GRH710 MURATA ERIE CAPACITOR MOTOROLA 381 equivalent
Contextual Info: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

Contextual Info: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and

Contextual Info: Document Number: MRF21060 Rev. 8, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

CDR33BX104AKWS

Abstract: MRF21060 MRF21060LR3 MRF21060LSR3
Contextual Info: Document Number: MRF21060 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060LR3 MRF21060LSR3 Designed for PCN and PCS base station applications with frequencies from

CDR33BX104AKWS

Abstract: MRF19060 MRF19060LR3 MRF19060LSR3 100B100JCA500X 100B5R1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF19060 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF19060LR3 MRF19060LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

MRF19030

Abstract: MRF19030S A2XD
Contextual Info: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19030 MRF19030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to

CDR33BX104AKWS

Abstract: MRF21060 MRF21060S
Contextual Info: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21060 MRF21060R3 MRF21060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier

500 watts amplifier schematic diagram

Abstract: 100B4R7 700 watts power amplifier circuit diagram
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF187/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF187 MRF187R3 MRF187SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs

Contextual Info: Freescale Semiconductor Technical Data MRF19060 Rev. 7, 12/2004 RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

Contextual Info: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

Contextual Info: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 RF Power Field Effect Transistors MRF21060R3 MRF21060S N–Channel Enhancement–Mode Lateral MOSFETs MRF21060SR3 The RF MOSFET Line Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060R3 MRF21060S MRF21060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from

T17 motorola

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: MRF19030
Contextual Info: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19030 MRF19030S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to

Contextual Info: MOTOROLA Order this document by MRF187/D SEMICONDUCTOR TECHNICAL DATA MRF187 MRF187S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these

MRF19030

Abstract: MRF19030S J721 mosfet amplifier class ab rf
Contextual Info: MOTOROLA Order this document by MRF19030/D SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to

20000 watts power amplifier circuit diagrams

Abstract: CDR33BX104AKWS MRF187 MRF187R3 MRF187SR3 J01-7
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF187/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF187 MRF187R3 MRF187SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

diode wb1

Abstract: MRF896S WB1 DIODE diode wb2 1n4001 motorola ECEV1HV100R
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F896 M R F896S The RF Line NPN S ilico n RF P o w er T ran sisto rs Motorola Prafanwl DavlcM Designed for 24 Volt UHF large-signal, common emitter, Class AB and Class A linear am plifier applications in industrial and commercial FM/AM equipment

22 Z1

Abstract: z14 SMT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060R3 MRF19060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier