A2XD Search Results

zck m1

Abstract: SIEMENS BST ABIAP zck d15 D1113 SIEMENS BST h 05 90 SIEMENS SCR BST smd marking mop smd marking T22 Siemens pulse sequence
Contextual Info: SIEM ENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fc K 166 125 125 125 MHz latency 3 2 3 3 - ÍCK3 6 8 7 8 ns ^AC3 5.5 5.5 5.5 6 Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability

d4564841

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

Contextual Info: SIEMENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - tcKS 6 8 7 8 ns {AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability

Contextual Info: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control

d4516161

Abstract: MPD4516421
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T he /¿PD4516421, 451 6821, 4516161 are high-speed 16,777,216 -bit s y nchrono us dyna m ic random -access m em o ries, org a n ize d a s 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524 ,288 x 16 x 2 w ord x bit * ban k}, respectively.

Contextual Info: ^ 1-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-W 0RDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.

SMD marking s07

Abstract: smd marking YB smd marking T22 smd code Yj 33 1t211 39S16400 JEM AC3 ml 721 T1-1 P-TSOPII-44 SP 1191
Contextual Info: SIEM EN S 16 MBit Synchronous DRAM • HYB 39S16400/800/160CT-8/-10 High Performance: /c K M A X ?CK3 -8 -10 Units 125 100 MHz 8 10 ns ! AC3 6 7 ?CK2 10 12 ns ?AC2 6 8 ns ns • Multiple Burst Read with Single Write Operation • Autom atic and Controlled Precharge

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD45128441,45128841,45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.

A91A

Abstract: pd45256 toyo uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF AYAA
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jUPD45256441,45256841,45256163 256M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access memories, organized as 16,777,216x4x4, 8,388,608x8x4, 4,194,304x16x4 word x bit x bank , respectively.