UPD4564441 Search Results

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 6 4 4 4 1 ,4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynam ic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.

d4564841

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 are assembled.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

D14-D17

Abstract: 8js9 d45128841g5 m1408 mark code AVV MC-4516DA727LF-A75 uPD45128841 MC-4516DA727 MC-4516DA727EFA-A75 D45128
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA727LF is a 16,777,216 words by 72 bits synchronous dynam ic RAM module on which 18 pieces of 64M SDRAM: ,uPD4564441 are assembled, and the MC-4516DA727EFA is a 16,777,216 words by 72 bits

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4516DA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM: ,uPD4564441 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 Revision E are assembled.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 5 6 4 4 4 1 -A 7 5 , 4 5 6 4 8 4 1 -A 7 5 64M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,uPD4564441-A75, 4564841-A75 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4 and 2,097,152 x 8 x 4 word x bit x bank , respectively.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

C4516DA72

Abstract: MC-4516DA726 MC-4516DA726F-A80 MC-4516DA726LF-A80 PD45128841 CDC2509
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726F, 4516DA726LF, 4516DA726LFB are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM: ,uPD4564441 are assembled, and the MC-4516DA726EFC is a

CDC2509

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 Revision E are assembled.

d4564

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iPD4564441,4564841,4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA727 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 are assembled.

MEC 1300

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-4516CA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64 M SDRAM : ,uPD4564441 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description T he M C -4 516 D A 7 2 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 18 pieces o f 64M

apd456

Contextual Info: 9 MOS INTEGRATED CIRCUIT pPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The pPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD4564441, 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description T h e ¿¿PD4564441,4664641 are high-speed 67,108,864-bit s y n c h ro n o u s d y n a m ic ra n d o m -a ccess m em ories, org a n ize d as 4,194,304x4x4 and 2,097,152x8x4 wordxbttxbank , respectively.

LX 2262

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT / PD4564441,4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random -access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 (word x bit x bank , respectively.

E0123N

Abstract: E0123N81 elpida DDR2 layout techniques E0124N PD45128163 T101-T102
Contextual Info: USER'S MANUAL HOW TO USE SDRAM Document No. E0123N81 Ver.8.1 Date Published March 2009 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2004-2009 SUMMARY OF CONTENTS CHAPTER 1 PRODUCT OUTLINE .14

integrated circuit TL 2262

Abstract: TL 2262 integrated circuit tl 2262 am
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 64M -bit Synch ro nou s D R A M 4-bank, LVTTL Description T he /xPD4564441,4564841 are h igh-speed 67,108,864-bit s y n c h ro n o u s d yn a m ic ra nd o m -a cce ss m em ories,

E0123N

Abstract: elpida DDR2 layout techniques Hitachi T104 PD45128163 E0123N80 Hitachi DSA0043 E0124N ELPIDA SDRAM User Manual
Contextual Info: User’s Manual HOW TO USE SDRAM Document No. E0123N80 Ver.8.0 Date Published August 2007 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2001-2007 © NEC Corporation 1998 Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4516DA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-4516DA724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of