Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 6 4 4 4 1 ,4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynam ic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.
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OCR Scan
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uPD4564441
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
S54G5-80-9JF
PD4564441
PD4564xxx.
pPD4564xxxG5
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PDF
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d4564841
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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OCR Scan
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64M-bit
uPD4564441
864-bit
54-pin
d4564841
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 are assembled.
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OCR Scan
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MC-4516DA72
72-BIT
MC-4516DA72
uPD4564441
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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OCR Scan
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64M-bit
uPD4564441
864-bit
54-pin
M12621EJBV0DS00
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PDF
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D14-D17
Abstract: 8js9 d45128841g5 m1408 mark code AVV MC-4516DA727LF-A75 uPD45128841 MC-4516DA727 MC-4516DA727EFA-A75 D45128
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA727LF is a 16,777,216 words by 72 bits synchronous dynam ic RAM module on which 18 pieces of 64M SDRAM: ,uPD4564441 are assembled, and the MC-4516DA727EFA is a 16,777,216 words by 72 bits
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OCR Scan
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MC-4516DA727
16M-WORD
72-BIT
MC-4516DA727LF
uPD4564441
MC-4516DA727EFA
uPD45128841
M168S-50A104
M14082EJ3V0DS00
C-4516DA727EFA]
D14-D17
8js9
d45128841g5
m1408
mark code AVV
MC-4516DA727LF-A75
MC-4516DA727
MC-4516DA727EFA-A75
D45128
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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OCR Scan
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uPD4564441
64M-bit
PD4564441,
864-bit
54-pin
S54G5-80-9JF-1
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The M C-4516DA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM: ,uPD4564441 are assembled.
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OCR Scan
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MC-4516DA726
72-BIT
C-4516DA726
uPD4564441
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA72 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 are assembled.
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OCR Scan
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MC-4516DA72
72-BIT
MC-4516DA72
uPD4564441
M200S-50A7
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 Revision E are assembled.
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OCR Scan
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MC-4516DA726
72-BIT
MC-4516DA726
uPD4564441
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 5 6 4 4 4 1 -A 7 5 , 4 5 6 4 8 4 1 -A 7 5 64M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,uPD4564441-A75, 4564841-A75 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4 and 2,097,152 x 8 x 4 word x bit x bank , respectively.
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OCR Scan
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64M-bit
133MHz
uPD4564441-A75
4564841-A75
864-bit
54-pin
13977EJ3V0D
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4564441,4564841,4564163 for Rev. E 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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OCR Scan
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uPD4564441
64M-bit
PD4564441,
864-bit
54-pin
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PDF
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C4516DA72
Abstract: MC-4516DA726 MC-4516DA726F-A80 MC-4516DA726LF-A80 PD45128841 CDC2509
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726F, 4516DA726LF, 4516DA726LFB are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM: ,uPD4564441 are assembled, and the MC-4516DA726EFC is a
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OCR Scan
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MC-4516DA726
72-BIT
MC-4516DA726F,
MC-4516DA726LF,
MC-4516DA726LFB
uPD4564441
MC-4516DA726EFC
uPD45128841
M168S-50A107
13203EJ6V0D
C4516DA72
MC-4516DA726
MC-4516DA726F-A80
MC-4516DA726LF-A80
PD45128841
CDC2509
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PDF
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CDC2509
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 Revision E are assembled.
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OCR Scan
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MC-4516DA726
72-BIT
MC-4516DA726
uPD4564441
CDC2509
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PDF
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d4564
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ;iPD4564441,4564841,4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4, 1,048,576 x16 x 4 word x bit x bank , respectively.
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OCR Scan
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iPD4564441
64M-bit
uPD4564441
864-bit
54-pin
M12621EJAV0DS00
d4564
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA727 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA727 is an 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : ,uPD4564441 are assembled.
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OCR Scan
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MC-4516DA727
16M-WORD
72-BIT
MC-4516DA727
uPD4564441
C-4516DA727-A75
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PDF
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MEC 1300
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-4516CA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64 M SDRAM : ,uPD4564441 are assembled.
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OCR Scan
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MC-4516CA724
16M-WORD
72-BIT
MC-4516CA724
uPD4564441
-4516CA724-A10
-4516CA724-A12
MEC 1300
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description T he M C -4 516 D A 7 2 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 18 pieces o f 64M
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OCR Scan
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MC-4516DA72
72-BIT
uPD4564441
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PDF
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apd456
Abstract: No abstract text available
Text: 9 MOS INTEGRATED CIRCUIT pPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The pPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.
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Original
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pPD4564441
pPD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
apd456
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD4564441, 4564841 64M-bit Synchronous DRAM 4-bank, LVTTL Description T h e ¿¿PD4564441,4664641 are high-speed 67,108,864-bit s y n c h ro n o u s d y n a m ic ra n d o m -a ccess m em ories, org a n ize d as 4,194,304x4x4 and 2,097,152x8x4 wordxbttxbank , respectively.
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OCR Scan
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uPD4564441
uPD4564841
64M-bit
PD4564441
864-bit
304x4x4
152x8x4
54-pin
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PDF
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LX 2262
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / PD4564441,4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random -access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 (word x bit x bank , respectively.
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OCR Scan
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uPD4564441
uPD4564841
uPD4564163
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
LX 2262
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PDF
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E0123N
Abstract: E0123N81 elpida DDR2 layout techniques E0124N PD45128163 T101-T102
Text: USER'S MANUAL HOW TO USE SDRAM Document No. E0123N81 Ver.8.1 Date Published March 2009 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2004-2009 SUMMARY OF CONTENTS CHAPTER 1 PRODUCT OUTLINE .14
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Original
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E0123N81
M01E0706
E0123N
E0123N81
elpida DDR2 layout techniques
E0124N
PD45128163
T101-T102
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PDF
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integrated circuit TL 2262
Abstract: TL 2262 integrated circuit tl 2262 am
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿iP D 4 5 6 4 4 4 1 , 4 5 6 4 8 4 1 64M -bit Synch ro nou s D R A M 4-bank, LVTTL Description T he /xPD4564441,4564841 are h igh-speed 67,108,864-bit s y n c h ro n o u s d yn a m ic ra nd o m -a cce ss m em ories,
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OCR Scan
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uPD4564441
uPD4564841
864-bit
304x4x4
152x8x4
54-pin
integrated circuit TL 2262
TL 2262 integrated circuit
tl 2262 am
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PDF
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E0123N
Abstract: elpida DDR2 layout techniques Hitachi T104 PD45128163 E0123N80 Hitachi DSA0043 E0124N ELPIDA SDRAM User Manual
Text: User’s Manual HOW TO USE SDRAM Document No. E0123N80 Ver.8.0 Date Published August 2007 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2001-2007 © NEC Corporation 1998 Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
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Original
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E0123N80
230mA
15525mA
7540mA
6675mA
3825mA
230ns
E0123N
elpida DDR2 layout techniques
Hitachi T104
PD45128163
E0123N80
Hitachi DSA0043
E0124N
ELPIDA SDRAM User Manual
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4516DA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-4516DA724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
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OCR Scan
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MC-4516DA724
16M-WORD
72-BIT
MC-4516DA724
uPD4564441
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PDF
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