st10f296
Abstract: st10f296 boot marking code W1p st10 Bootstrap 15B3 ST339
Text: ST10F296E 16-bit MCU with MAC unit, 832 Kbyte Flash memory and 68 Kbyte RAM Features • ■ High performance 16-bit CPU with DSP functions – 31.25 ns instruction cycle time at 64 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator
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Original
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PDF
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ST10F296E
16-bit
40-bit
32-bit
st10f296
st10f296 boot
marking code W1p
st10 Bootstrap
15B3
ST339
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Untitled
Abstract: No abstract text available
Text: ST10F296E 16-bit MCU with MAC unit, 832 Kbyte Flash memory and 68 Kbyte RAM Features • High performance 16-bit CPU with DSP functions – 31.25 ns instruction cycle time at 64 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator
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Original
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PDF
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ST10F296E
16-bit
16-bit
40-bit
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940-975
Abstract: coolant DIN912 EB98-J
Text: Actively Cooled Diode Laser Stack 25 ¼ 100 W cw, Both Axes Collimated SPL EBxx Preliminary Data Features Applications • Both axes collimated linear stack, actively cooled, for cw operation • Highly reliable strained layer InGa Al As/GaAs material with MTTF life time > 10000 h
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Original
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PDF
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DIN912
GWOY6035
940-975
coolant
EB98-J
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ST10F296
Abstract: MARKING W1P marking code W1p transistor w1P 97 W1P 59 transistor 21H101 sgt 200 ST10F296E st10 Bootstrap transistor w1P
Text: ST10F296E 16-bit MCU with MAC unit, 832 Kbyte Flash memory and 68 Kbyte RAM Features • ■ ■ ■ High performance 16-bit CPU with DSP functions – 31.25 ns instruction cycle time at 64 MHz max CPU clock – Multiply/accumulate unit MAC 16 x 16-bit multiplication, 40-bit accumulator
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Original
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PDF
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ST10F296E
16-bit
16-bit
40-bit
ST10F296
MARKING W1P
marking code W1p
transistor w1P 97
W1P 59 transistor
21H101
sgt 200
ST10F296E
st10 Bootstrap
transistor w1P
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DIN912
Abstract: SPL EB98-K EB98-J EB94-H EB98-H EB81-H EB98H
Text: Actively Cooled Diode Laser Stack 25 … 100 W cw, Both Axes Collimated SPL EBxx Preliminary Data Features Applications • Both axes collimated linear stack, actively cooled, for cw operation • Highly reliable strained layer InGa Al As/GaAs material with MTTF life time > 10000 h
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Original
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PDF
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DIN912
GWO06035
SPL EB98-K
EB98-J
EB94-H
EB98-H
EB81-H
EB98H
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