SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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2SC1924
Abstract: NE32700
Contextual Info: NPN SILICON HIGH SPEED SWITCHING TRANSISTOR NE327 SERIES FEATURES_ DESCRIPTION • ULTRA-HIGH SWITCHING SPEED : toN 0.7 ns TYP, toFF 0.5 ns TYP The NE327 series of NPN silicon transistors is designed for use in ultrahigh speed current mode switching applications
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NE327
E32740)
NE32740
IS12S21I
NE32700
2SC1924
NE32700
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e327425
Abstract: F2138-000 DMJ2088-255
Contextual Info: Silicon Beam-Lead ESAlpha Schottky Barrier Mixer Diodes DME, DMF and DMJ Series Features • Ideal for M IC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SP C Controlled W afer Fabrication ^ > > p -
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01Omm)
015mm)
005mm)
e327425
F2138-000
DMJ2088-255
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2SC1924
Abstract: NE32700 2sc1925 ne327 NE32708
Contextual Info: NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION • ULTRA-HIGH SWITCHING SPEED : to N 0.7 ns TYP, to F F The NE327 series of NPN silicon transistors is designed for use in ultrahigh speed current mode sw itching applications and for use in m icrowave am plifiers up to 1 GHz. Transistors
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NE327
NE32740)
E32740
NE32700
2SC1924
2sc1925
NE32708
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