E10 M DIODE Search Results

ME101203

Abstract: ME101603 powerex ME10
Contextual Info: 1SE » POWEREX INC fO M C R E • 72T4fc»21 QQQ33ST 4 ■ X M E10 Powerex, Ino., HIIUs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, Fiance (43) 72.75.15 T -A Z -oy 03 Three-Phase Diode Bridge Module

16NE10

Contextual Info: STD16NE10 N - CHANNEL 100V - 0.07Q - 16A - IPAK/DPAK STripFET MOSFET TYPE V dss S TD 16N E10 . m . . . . . 100 V Id *DS on < 0.1 Q 16 A TYPICAL R ds(oii) = 0.07 Q EXCEPTIO NALdv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED

ym 238

Contextual Info: STP50NE10 N - CHANNEL 100V - 0.021Q - 50A - D2PAK STripFET POWER MOSFET TYPE S TP 50N E10 V dss RDS on Id 1 00 V <0.027 Q 50 A TYPICAL Ftos(on) = 0.021 Q m EXCEPTIONALdv/dt CAPABILITY . . 100% AVALANCHE TESTED . LOW GATE CHARGE AT 100 °C . APPLICATION ORIENTED

Contextual Info: SCHOTTKY BARRIER DIODE E10 Q S 0 9 E 1 0 Q S 1 0 1 .1 A / 9 0 — 100V FEATURES 1 .6 .0 6 3 M A X 1 .8 (0 7 1 ) 1.41.055) ° Similar to TO-243AB (SOT-89) Case ° Surface Mount Device â.4(.Ô94) L ° Low Forward Voltage Drop m i 1.21.047) 0.W .031) ° Low Power Loss, High Efficiency

eco-pac

Abstract: transistor P18
Contextual Info: ECO-PACTM 2 CoolMOS Power MOSFET in ECO-PAC 2 ID25 VDSS RDSon PSHM 40/06 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 L9 P18 R18 K12 A1 E10 F10 NTC Preliminary Data Sheet

Contextual Info: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions

VKM40-06P1

Abstract: eco-pac CoolMOS Power Transistor power mosfet 200A mosfet Vds 50 Vgsth a22055 welding mosfet
Contextual Info: VKM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 A1 L9 K 12 P 18 R 18 NTC Preliminary data sheet E10 F10 X 15 K 13

VKM40-06P1

Abstract: eco-pac vkm40
Contextual Info: VKM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 A1 L9 K 12 P 18 R 18 NTC Preliminary data sheet E10 F10 X 15 K 13

Contextual Info: VKM 60-01P1 HiPerFETTM Power MOSFET ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ H-Bridge Topology in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 E10 P 18 R 18 NTC Preliminary data sheet L9 K 13 F10 X 15

Contextual Info: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 K 12 A1 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18

60-01P1

Abstract: eco-pac
Contextual Info: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18

20E10

Abstract: C1303 20E1 20E2 20E4 20E6 20E8 231S 25CC
Contextual Info: SILICON RECTIFIER DIODE i 2 0 E1~ 2 0 E10 .7 a / i o o ~ i o o o v FEATURES ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ” High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S \ type Voltage Rating

E10DS2

Abstract: E10DS4
Contextual Info: SILICON RECTIFIER DIODE ia / io o ~ 4 oov e io d s i FEATURES e io d s 1 8 071, 1.4(.055 OTO-243AB (SOT-89) Case .L 1.2(.047) 0.81.031) ° Low Reverse Leakage Current e io d s 4 1.6I.0631MAX 2.4(,094) I [ 4.251167) ° Surface Mount Device o Low Forward Voltage Drop

Semikron k5 m6

Abstract: semikron skn 50/04 SKN 21 Semikron SKR 21 SKN 50/08 semikron skr 50/08 diode skn 5/ 08 semikron Semikron SKR 60 F 15 SKR 50 f5010
Contextual Info: VRSM VRRM IFRMS maximum values for continuous operation 100 A Fast Recovery Rectifier Diodes IFAV (sin. 180; Tcase = . . . ) 50 A (105 °C) 50 A (95 °C) SKN 2 F 50 SKR 2 F 50 trr = 200 ns V 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04 SKR 2 F 50/04 UNF

414 B zenar diode

Abstract: zener diode on 822 zener diode t5 umi 122 ZENER DIODE SMA marking E10 DIODE ci 741A je200 marking AHL ZENER A4
Contextual Info: TAIWAN SEMICONDUCTOR s à RoHS 1S M A 4737 - 1S M A 200Z 1.0 W atts Surface Mount Silicon Zener Diode COMPLIANCE S M A /D O -2 1 4 A C n I n Features -0- Q ualified as p er AEC-Q101 4- F or surface m ounted applications in order to optim ize board space Low profile package

Contextual Info: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.

Contextual Info: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.

3TC56

Abstract: tea5500 zener diode E7
Contextual Info: Product specification Philips Semiconductors Integrated Circuits TEA5500 TEA5500T Coded locking circuit for security systems GENERAL DECRIPTION The TEA5500 is an encoder/decoder circuit, for security systems. The system has the ability to transmit a complex code between an encoding and decoding unit by infrared radiation. The device can

BPW50

Abstract: coy89a TEA5500 BC327 TEA5500T E9 amplifier E9 amplifier 16 pin zener diode E7
Contextual Info: Philips Semiconductors Integrated Circuits ezco^iz. V»,/ C— * I I Product specification TEA5500 TEA5500T Coded locking circuit for security systems GENERAL DECRIPTION The TEA5500 is an encoder/decoder circuit, for security systems. The system has the ability to

Contextual Info: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.

TEA5500

Abstract: PJ 986 R/pj 989 diode iclock 990 E9H diode 16-LEAD DIODE AM MODULATOR ZENER DIODE E1 IEC134 TEA5500T
Contextual Info: Product specification Philips Semiconductors Integrated Circuits TEA5500 TEA5500T Coded locking circuit for security systems G E N E R A L D E C R IP T IO N The T E A 5 5 0 0 is an encoder/decoder circuit, fo r security systems. The system has the ability to

TEA5500

Abstract: cqy89a t162a A5500 CQY89 TEA5500T
Contextual Info: TEA5500 TEA5500T CODED LOCKING CIRCUIT FOR SECURITY SYSTEMS G ENERAL DECRIPTION The TE A 5500 is an encoder/decoder circuit, for security systems. The system has the ability to transmit a complex code between an encoding and decoding unit by infrared radiation. The device can

la1951

Abstract: zener diode E7 ir remote control circuit TEA5500 5500T INFRARED REMOTE CONTROL decoder
Contextual Info: P ro d u ct specification Philips S em ico n d u cto rs Integrated Circuits TEA5500 TEA5500T Coded locking circuit for security systems GENERAL DECRIPTION The TEA 5500 is an encoder/decoder circuit, for security systems. The system has the ability to transmit a complex code between an encoding and decoding unit by infrared radiation. The device can

SARP500

Abstract: SAR-500
Contextual Info: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.