00D23 Search Results

NE24300

Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Contextual Info: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator

A05F

Abstract: AR05F AS05F semtech AS4
Contextual Info: SEliTECH CORP 34E ]> • fllBllBT 00D23D3 2Sb « S E T CENTER TAPS AND DOUBLERS ^ ABSOLUTE MAXIMUM RATINGS @25°C UNLESS OTHERWISE SPECIFIED Device Type Average Forward Current (5) Reverse Voltage VnwM Vrrm Volts I Volts (1) (2) If (AV) 0 Tc If (AV) 0 T*

Contextual Info: ITWO CHIPS TYPE LED ▼ROUND TWO CHIPS TYPE LED ▼PACKAGE DIMENSIONS Ta=25 C Unit : mm Mt7ûlSÔ 00D23ÖS ^23 51

1553 bus

Abstract: HM-65664 80C31M
Contextual Info: 5öbß45b QÜ0E3M3 1ÖT • MMHS January 1991 Preview MATRA H H S 29C530 HI-REL DATA SHEET MIL-STD-1553B PROTOCOL MANAGEMENT UNIT FEATURES . PIN PROGRAMMABLE FEATURES : - COMPATIBILITY WITH INTEL AND MOTOROLA MICROPROCESSORS - 8 OR 16 BIT INTERFACE - SUPPORT OF THREE MEMORY INTERFACE

fuse code Jd 0,7A

Abstract: odv marking PM5323 PM5344 PM5361 PM5371 TU12
Contextual Info: S tan d a r d PM I / I P roduct _ _ _ PRELIMINARY INFORMATION P M C -S ie rra , Inc. PM5361 TUPP SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FEA TU R ES • Configurable, multi-channel, payload processor for alignment of SONET virtual tributaries VTs or SDH tributary units (TUs). Processes an STS-3 or STM-1 byte

Contextual Info: HIROSE ELECTRIC U S A INC b4E D 41H3237 D0D2323 21Ü PIN HEADER Unit: mm HRS No. Part No. No. of Pin A B C D E CL540 -0 0 1 6 -0 D F 9A - 9 P -1V 9 8.3 6.6 3.0 4.0 7.1 CL540—0017—7 D F 9A -11P -1V 11 9.3 7.6 4.0 5.0 8.1 CL540—0018—6 D F 9A -13P -1V

Contextual Info: FEATURES & • D C -5 0 0 MHz ■ 1dB LSB, 31 dB Range ■ 100 nSec Switching Speed MODEL NO. DAT58032 GaAs 5 Section Attenuator ■ 9 mA @ +5 VDC ■ 14 mA @ -12 VDC 5 BIT ■ 24 Pin Flatpack ■ See DA0953 for 24 Pin DIP RF IN/OUT GND 24 23 PART GND 22 GND

Contextual Info: HIROSE ELECTRIC U S A INC L.HE D • M4T3237 DDG23S2 304 ■-RECEPTACLE WITH REINFORCE-HARDWARE U n it: m m HRS No. Vs 8 Part No. No. of

Contextual Info: M -9 8 6 -1 R 1 a n d -2 R 1 M FC Transceivers Teltone M-986-1R1 and -2R1 MF Transceivers contain all the logic necessary to transmit and receive R 1 multifrequency signals on one 40-pin integrated circuit IC . M-986-1R1 is a single-channel version; M-986-2R1 provides two channels.

HY53C464LS

Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
Contextual Info: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

Contextual Info: Ultra Bright LED Lamps: Type 3 Weight: 0.31 g Unit: mm ANDS4E38XX InGaAlP Ultra Bright Yellow Light Emission T-1 3/4 Package 5 mm Features • Peak wavelength (>.p = 590 nm) ultra bright emission • All plastic mold type, clear colorless lens • Low drive current: 1 to 20 mA DC

qml-38535

Abstract: 54ABT244 GDFP2-F20 smd "vhz"
Contextual Info: REVISIONS i DATE DESCRIPTION LTR APPROVED YR-MO-DA REV SHEET REV 15 SHEET 16 17 19 20 REV REV STATUS OF SHEETS 1 SHEET 2 Joseph A. Kerby STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

Contextual Info: DIODE T H R E E P H A S E S B R ID G E T Y P E DF40BA Power Diode Module D F 40B A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri­ cally isolated from semiconductor elements for simple heatsink

486 motherboard schematic

Abstract: 486dx2 pinouts 486DX2 486dx schematic 4021-A TL05A Super386 t187 T106B J7 CHIPS TECHNOLOGIES
Contextual Info: CHIPS & TECHNOLOGIES INC SIE D • SO Töllb DDOSSba 4ÖT M C H P 9000-380 8 CHIPS CHIPS & TECHNOLOGIES INC S1E » ■ EQTflllb □□□PPbM 31S MCHP T -v 1 -1 7 -0 1 Copyright Notice Software Copyright 1992, Chips and Technologies, Inc. Manual Copyright © 1992, Chips and Technologies, Inc.

9CTI

Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Contextual Info: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

Contextual Info: A /V X * C D M , IN C . Advance Information MX 909 HIGH-SPEED AND MOBITEX* GMSK MODEM Features • • • • • • MX’ COM MX'D SIGNAL CMOS MOBITEX AND GENERAL-PURPOSE PACKET DATA APPLICATIONS • WIRELESS DATA • RADIO TELEMETRY • POINT-OF-SALE & “SWIPE” TERMINALS

Contextual Info: LF2242 12/16-bit Half-Band Interpolating/ Decimating Digital Filter DEVICES INCORPORATED DESCRIPTION FEATURES □ 66 M H z Clock Rate □ Passband 0 to 0.22/ s Ripple: ±0.02 dB □ Stopband (0.28/s to 0.5/s) Rejection: 59.4 dB □ User-Selectable 2:1 Decimation or

o64f

Abstract: M5 ASCOM B14 ZP
Contextual Info: T em ic 29C79 MATRA MHS VINCI Chip —High-Speed Data Encryption / Decryption Unit Description The V inci Chip is a programmable data enciyption/decryption unit designed to encrypt and decrypt 64-bit blocks of data using the International Data Encryption Algorithm I d e a by Lai and

Contextual Info: Ultra Bright LED Lamps: Type 2 Weight: 0.31 g Unit: mm AND180TYP InGaAlP Yellow Light Emission T-1 3/4 Package 5 mm Features • • • • • • • • New emission material (InGaAlP) yellow LED Peak wavelength (X.p = 590 nm) high bright emission All plastic mold type, clear colorless lens

Contextual Info: IBM11M1720B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: • 1Mx72 Fast Page Mode DIMM - • Performance: Buffered inputs except RAS, Data

A1700

Contextual Info: FEATURES , • 500- 1000MHz MultipleBit PhaseShifter inSmall Package i •' WBB I MODEL NO. ' DP^ 45fl?Q " °‘’pJ. . ' 38 Pin DIP , ‘ , Phase Shifter 4 Section PART RF IN/OUT GND 38 37 ID E N T IF IC A T IO N O RF 34 32 31 30 29 28 27 26 25 24 23 GND

Contextual Info: THYRISTOR MODULE PK pd,pe,kk 40F Power Thyristor/Diode Module series are designed for PK 40F UL;E76102(M) various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 1,600 V are available. High precision 25 mm (linch)

Contextual Info: HIROSE ELECTRIC U S A INC bHE ]> • 44^3237 00Ü2324 1S7 I PIN HEADER WITH REINFORCE-HARDWARE ¥ U= U nit: mm HRS No. 10 Part No. No. of Pin A B C D E F C L540—0066—9 D F 9 - 9 P -1 V 9 8.3 6.6 3.0 4.0 7.1 10.5 C L 5 4 0 -0 0 6 7 —1 D F a -1 1 f-1 V

Contextual Info: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density