16N50P
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500
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16N50P
O-220
O-263
O-247
16N50P
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22N50P
Abstract: IXTQ 22N50P IXTQ22N50P 22N50 IXTH 22N50P
Text: PolarHVTM Power MOSFET IXTH 22N50P IXTQ 22N50P IXTV 22N50P IXTV 22N50PS N-Channel Enhancement Mode Avalanche Rated = 500 V = 22 A ≤ 270 mΩ Ω VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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22N50P
22N50PS
O-247
PLUS220
IXTQ 22N50P
IXTQ22N50P
22N50
IXTH 22N50P
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CA16
Abstract: No abstract text available
Text: Advance Data Sheet March 2001 CA16-Type 2.5 Gbits/s Translight DWDM Transponder with 16-Channel 155 Mbits/s Multiplexer/Demultiplexer • Multiple alarms: — Loss of signal. — Loss of reference clock. — Loss of framing. — Laser degrade alarm. Applications
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CA16-Type
16-Channel
DS01-120OPTO
DS99-352LWP)
CA16
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information Linear Power MOSFET IXTK46N50L With Extended FBSOA IXTX46N50L VDSS ID25 N-Channel Enhancement Mode RDS on = 500 = 46 ≤ 0.16 V A Ω TO-264 (IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR
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IXTK46N50L
IXTX46N50L
O-264
46N50L
5-07-A
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Untitled
Abstract: No abstract text available
Text: VDSS ID25 IXTQ88N28T Trench Gate Power MOSFET RDS on = = ≤ 280V 88A Ω 44mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 280 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 280 V
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IXTQ88N28T
DS99353B
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DISPERSION COMPENSATING FIBER
Abstract: DCF fiber dcf fiber parameters AP99-020 1725-type GR-1312-CORE 1725 edfa DS99-353
Text: Preliminary Data Sheet February 2003 TriQuint Optoelectronics 1725-Type Gain Block Erbium-Doped Fiber Amplifier Features • intCTOR QICuONDU i r TSEM Characterized by extremely flat gain over a wide 1.5 µm wavelength range, the 1725-Type Gain Block EDFA features a
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1725-Type
nm--1560
DS99-271-1
DISPERSION COMPENSATING FIBER
DCF fiber
dcf fiber parameters
AP99-020
GR-1312-CORE
1725 edfa
DS99-353
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16n50
Abstract: 646V
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 16N50P IXFP 16N50P IXFH 16N50P VDSS ID25 = 500 V = 16 A Ω = 400 mΩ = 200 ns RDS on trr N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
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16N50P
16N50P
O-220
O-263
O-247
16n50
646V
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46N50L
Abstract: No abstract text available
Text: Power MOSFETs with Extended FBSOA IXTK 46N50L IXTX 46N50L VDSS ID25 = 500 = 46 RDS on = 0.16 V A Ω N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXTK) VDSS TJ = 25 C to 150 C 500 V VDGR
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46N50L
46N50L
150oC;
O-264
PLUS247
O-247
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Hytrel G
Abstract: schematic power diode laser module pump DS92-212LWP agere photodiode 263JLG DS98-339LWP
Text: Data Sheet March 2000 263-Type 0.98 µm Pump Laser with Fiber Grating Applications • Erbium-doped fiber amplifier systems: — Optical preamplifiers — In-line optical repeaters — Power-booster amplifiers Description Offering superior wavelength stability, the 263-Type Laser
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263-Type
DS00-130OPTO
DS99-200LWP)
Hytrel G
schematic power diode laser module pump
DS92-212LWP
agere photodiode
263JLG
DS98-339LWP
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFV22N50P IXFV22N50PS IXFH22N50P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 500V 22A Ω 270mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXFV22N50P
IXFV22N50PS
IXFH22N50P
200ns
PLUS220
100ms
IXFV22N50PS
22N50P
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFETs VDSS ID25 IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 IXTV RDS(on) trr(typ) G S D (TAB) 500V 22A Ω 270mΩ 400ns TO-3P (IXTQ) PLUS220SMD (IXTV_S) G D S = = ≤
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IXTV22N50P
IXTV22N50PS
IXTQ22N50P
IXTH22N50P
PLUS220
400ns
PLUS220SMD
O-247
100ms
IXTV22N50P
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263DN-263HN
Abstract: 263DN lucent DFB laser application 263KN laser diode symbol schematic laser sensor performance LUCENT ELECTRO DEVICE LUCENT InGaAs 263EN laser detector
Text: Data Sheet March 2000 263-Type 0.98 µm Pump Laser Module Features The 263-Type Laser Modules are designed exclusively as continuous wave CW optical pump sources for 1.5 µm erbiumdoped fiber amplifier systems. • High-coupled rated output power (up to 180 mW
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263-Type
14-pin
DS00-072OPTO
DS99-199LWP)
263DN-263HN
263DN
lucent DFB laser application
263KN
laser diode symbol schematic
laser sensor performance
LUCENT ELECTRO DEVICE
LUCENT InGaAs
263EN
laser detector
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IXTP60N20T
Abstract: 60N20T IXTA60N20T 60n20 ixtq60n20t ixta 60N20T ixtp60n20 ixys 60n20t ixta60n2 ixta60n20
Text: IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C
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IXTA60N20T
IXTP60N20T
IXTQ60N20T
O-263
O-220AB
062in.
60N20T
IXTP60N20T
IXTA60N20T
60n20
ixtq60n20t
ixta 60N20T
ixtp60n20
ixys 60n20t
ixta60n2
ixta60n20
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data sheet ic 7495
Abstract: CA16 23/pin configuration of 8251
Text: Advance Data Sheet July 2000 CA16-Type 2.5 Gbits/s Translight DWDM Transponder with 16-Channel 155 Mbits/s Multiplexer/Demultiplexer • Multiple alarms: — Loss of signal. — Loss of reference clock. — Loss of framing. — Laser degrade alarm. Applications
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CA16-Type
16-Channel
DS99-352LWP
data sheet ic 7495
CA16
23/pin configuration of 8251
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ixtq-22n50p
Abstract: 22N50P IXTQ 22N50P PLUS220SMD 22N50 C5237 8V45
Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 22N50P IXTV 22N50P IXTV 22N50PS VDSS ID25 RDS on = 500 V = 22 A Ω = 270 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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22N50P
22N50PS
PLUS220
405B2
22N50PS
ixtq-22n50p
22N50P
IXTQ 22N50P
PLUS220SMD
22N50
C5237
8V45
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88N28T
Abstract: IXTQ88N28T ixtq
Text: IXTQ 88N28T Advance Technical Infomation IXTQ 88N28T Trench Gate Power MOSFET VDSS ID25 RDS on = 280 V = 88 A Ω = 42 mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 280 V VDGR
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88N28T
DS99353A
88N28T
IXTQ88N28T
ixtq
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22N50P
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM Power MOSFET IXFH 22N50P VDSS ID25 RDS on = 500 V = 22 A Ω = 270 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25 IDM
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22N50P
O-247
O-247
260Gate
405B2
22N50P
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IXTQ22N50P
Abstract: IXTH22N50P IXTV22N50P IXTV22N50PS ixtq-22n50p 22N50 PLUS220SMD IXTH 22N50P
Text: IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 IXTV VDSS ID25 RDS(on) trr(typ) G D (TAB) S 500V 22A Ω 270mΩ 400ns TO-3P (IXTQ) PLUS220SMD (IXTV_S) G D S = = ≤
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IXTV22N50P
IXTV22N50PS
IXTQ22N50P
IXTH22N50P
PLUS220
400ns
PLUS220SMD
O-247
100ms
IXTV22N50P
IXTQ22N50P
IXTH22N50P
IXTV22N50PS
ixtq-22n50p
22N50
PLUS220SMD
IXTH 22N50P
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60n20
Abstract: 60N20T IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T
Text: Preliminary Technical Information IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions
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IXTA60N20T
IXTP60N20T
IXTQ60N20T
O-263
O-220AB
60N20T
60n20
IXTQ60N20T
IXTA60N20T
IXTP60N20T
ixta 60N20T
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2 Wavelength Laser Diode
Abstract: 263PN 263DN 263EN 263FN 263GN 263HN 263JN 263KN 263LN
Text: Data Sheet March 2000 263-Type 0.98 µm Pump Laser Module Applications • Erbium-doped fiber amplifier systems: — Optical preamplifiers — In-line optical repeaters — Power-booster amplifiers Description The 263-Type Laser Modules are designed exclusively as
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263-Type
DS00-072OPTO
DS99-199LWP)
2 Wavelength Laser Diode
263PN
263DN
263EN
263FN
263GN
263HN
263JN
263KN
263LN
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IXTK46N50L
Abstract: PLUS247 46n50
Text: Preliminary Technical Information Linear Power MOSFET IXTK46N50L With Extended FBSOA IXTX46N50L VDSS ID25 N-Channel Enhancement Mode RDS on = 500 = 46 ≤ 0.16 V A Ω TO-264 (IXTK) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR
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IXTK46N50L
IXTX46N50L
O-264
46N50L
5-07-A
IXTK46N50L
PLUS247
46n50
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IXTQ80N28T
Abstract: IXTQ
Text: IXTQ 80N28T Advance Technical Infomation IXTQ 80N28T Trench Gate Power MOSFET VDSS ID25 RDS on = 280 V = 80 A Ω = 49 mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 280 V VDGR
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80N28T
IXTQ80N28T
IXTQ
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lucent 263mng
Abstract: lucent microelectronics pump laser D2500 Grating Hytrel G Lucent 1319 lucent EDFA DS92-212LWP Laser sensor module laser receiver module
Text: Data Sheet March 2000 263-Type 0.98 µm Pump Laser Module with Fiber Grating Applications • Erbium-doped fiber amplifier systems — Optical preamplifiers — In-line optical repeaters — Power-booster amplifiers Description Offering superior wavelength stability, the 263-Type Laser
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263-Type
DS00-130OPTO
DS99-200LWP)
lucent 263mng
lucent microelectronics pump laser
D2500
Grating
Hytrel G
Lucent 1319
lucent EDFA
DS92-212LWP
Laser sensor module laser receiver module
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514256a
Abstract: MCM514256AZ10 MCM514256AP70 MCM514256APC80 MCM514256A-10 514256A-70 MCM51L4256A-70 MCM514256A-80 MCM514256AJ80 MCM514256AZ80
Text: i O rder this docum ent by M CM 514256A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM514256A MCM51L4256A 256Kx4 CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range The MCM514256A is a 1,0|x CMOS high-speed, dynamic random access memory. It is organized as 262,144 four-bit words and fabricated with CMOS
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14256A/D
256Kx4
MCM514256A
300-mil
100-mil
A23028-2
14256A
51L4256A
514256a
MCM514256AZ10
MCM514256AP70
MCM514256APC80
MCM514256A-10
514256A-70
MCM51L4256A-70
MCM514256A-80
MCM514256AJ80
MCM514256AZ80
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