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    RF3230

    Abstract: No abstract text available
    Text: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features         Applications    Battery Powered 3G


    Original     		PDF RF3230 00mmx6 00mmx1 GSM850/EGSM900/DCS/ EIA-481. DS110216 RF3230

    RFMX-2

    Abstract: Emerson 142-0741-851
    Text: RFMX2015 RFMX2015Differential IF Down-Converter 2300 MHz to 2700MHz DIFFERENTIAL IF DOWN-CONVERTER 2300MHZ TO 2700MHZ Features       IFN IFP GND NC 17 16 NC 1 15 NC RFIN 2 14 NC GND 3 13 GND GND 4 12 GND GND 5 11 LO 7 8 9 10 GND 6 NC Applications


    Original     		PDF RFMX2015 RFMX2015Differential 2700MHz 2300MHZ 20-Pin, 2000MHz 3000MHz RFMX-2 Emerson 142-0741-851

    Untitled

    Abstract: No abstract text available
    Text: RFXF0573 RFXF05731:1 SMT Transformer 1:16 SMT TRANSFORMER Package: S-20 Features  Frequency Range 5MHz to 40MHz  Low Cost and RoHS Compliant  Flux Coupled  Industry Standard SMT package  Available in Tape-and -Reel  50Ω Characteristic Impedance


    Original     		PDF RFXF0573 RFXF05731 40MHz RFXF0573 RFXF0573SB DS110211

    Untitled

    Abstract: No abstract text available
    Text: RFRP2920 RFRP2920 5MHz to 100MHz Si REVERSE HYBRID 5MHz to 100MHz Si REVERSE HYBRID LOW CURRENT Package: SOT-115J +VB Features   Excellent Linearity Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Low Noise


    Original     		PDF RFRP2920 100MHz RFRP2920 OT-115J 160mA 24VDC

    RFSW2041D

    Abstract: No abstract text available
    Text: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m


    Original     		PDF RFSW2041D 25GHz RFSW2041D 91mmx2 11mmx0 20GHz

    3g UMTS signal Schematic Diagram

    Abstract: No abstract text available
    Text: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2         Applications    Battery Powered 3G Handsets GSM850/EGSM900/DCS/


    Original     		PDF RF3230 00mmx6 00mmx1 GSM850 EGSM900 DCS1800 PCS1900 RF3230TR13 RF3230TR7 EIA-481. 3g UMTS signal Schematic Diagram

    Untitled

    Abstract: No abstract text available
    Text: RFXF0573 RFXF05731:1 SMT Transformer 1:16 SMT TRANSFORMER Package: S-20 Features  Frequency Range 5MHz to 40MHz  Low Cost and RoHS Compliant  Flux Coupled  Industry Standard SMT package  Available in Tape-and -Reel  50Ω Characteristic Impedance


    Original     		PDF RFXF05731 RFXF0573 40MHz RFXF0573 RFXF0573SB RFXF0573SQ RFXF0573SR RFXF0573TR13 DS110211

    Untitled

    Abstract: No abstract text available
    Text: RFGA2012 RFGA2012 InGaP HBT Low Power Linear Amplifier InGaP HBT LOW POWER LINEAR AMPLIFIER Package: DFN, 8-Pin, 2mmx2mm Features High OIP3=35dBm at 1960MHz VBIAS  Low DC Power: 3.3V, 23mA  Low NF = 1.6dB at 1960MHz 7 RFOUT/VCC  50MHz to 3000MHz Operation


    Original     		PDF RFGA2012 35dBm 1960MHz 50MHz 3000MHz RFGA2012 DS110215

    Untitled

    Abstract: No abstract text available
    Text: RFXF5553 RFXF55531:1 SMT Transformer 1:4 SMT TRANSFORMER Package: S-20 Features  Frequency Range 5MHz to 1200MHz  Low Cost and RoHS Compliant  Transmission Line  Industry Standard SMT package  Available in Tape-and -Reel  50Ω Characteristic Impedance


    Original     		PDF RFXF5553 RFXF55531 1200MHz RFXF5553 RFXF55 DS110211

    RF3232

    Abstract: HDR1X
    Text: RF3232 RF3232QuadBand GSM/GPRS Transmit module with Two UMTS Ports QUAD-BAND GSM/GPRS TRANSMIT MODULE WITH TWO UMTS PORTS 3 GND 4 RFIN HB 5    Applications      For Single and Dual band 3G Applications GSM850/EGSM900/ DCS1800/PCS1900


    Original     		PDF RF3232QuadBand RF3232 63mmx5 24mmx1 GSM850/EGSM900 DCS1800/PCS1900 2002/95/EC DS110217 RF3232 HDR1X

    RFSW2044D

    Abstract: ultrasonic thickness probes
    Text: RFSW2044D RFSW2044D DC to 25GHz GaAs SPST Switch DC TO 25GHz GaAs SPST SWITCH Package: Die, 1.91mmx1.11mmx0.10mm Product Description Features RFMD’s RFSW2044D is an absorptive SPST GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m


    Original     		PDF RFSW2044D 25GHz RFSW2044D 91mmx1 11mmx0 20GHz ultrasonic thickness probes

    E8363

    Abstract: No abstract text available
    Text: RFSW2042D RFSW2042D DC to 20GHz GaAs SP3T Switch DC TO 20GHz GaAs SP3T SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2042D is a reflective SP3T GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m


    Original     		PDF RFSW2042D 20GHz RFSW2042D 91mmx2 11mmx0 E8363

    resistor variable 50k

    Abstract: No abstract text available
    Text: RFPD2930 RFPD2930 45MHz to 1003MHZ GaAs/GaN PWR DBLR HYBRID 45MHZ to 1003MHZ GaAs/GaN PWR DBLR HYBRID Package: SOT-115J Current setting +VB Features   Excellent Linearity Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability


    Original     		PDF RFPD2930 45MHz 1003MHZ RFPD2930 OT-115J 450mA 24VDC resistor variable 50k

    A1933

    Abstract: amplifier 50 50W
    Text: RF3931D Proposed 30W GAN ON SIC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB


    Original     		PDF RF3931D 96mmx1 33mmx0 RF3931D DS110216 A1933 amplifier 50 50W

    Untitled

    Abstract: No abstract text available
    Text: RF9802 QUAD BAND GPRS/LINEAR EDGE TRANSMIT MODULE Features RFIN HB PowerStar Architecture  Proven  High Efficiency at Rated POUT VBATT =3.5V GSM850/EGSM900=41% DCS1800/PCS1900=38% GND GND RX1 RX2 RX3 GND 1 GND Package: Module, 6.63mmx5.24mmx1.00mm


    Original     		PDF RF9802 GSM850/EGSM900 DCS1800/PCS1900 63mmx5 24mmx1 RF716x RF9802TR13 RF9802TR7 EIA-481. DS110217

    Untitled

    Abstract: No abstract text available
    Text: RFSW2044D RFSW2044D DC to 25GHz GaAs SPST Switch DC TO 25GHz GaAs SPST SWITCH Package: Die, 1.91mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2044D is an absorptive SPST GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m


    Original     		PDF RFSW2044D 25GHz 25GHz RFSW2044D 20GHz 22-A114. MIL-STD-1686

    SPB-2026Z

    Abstract: SPB-2026ZSR ER39 spb2026z s-parameters
    Text: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated


    Original     		PDF SPB2026Z SPB2026Z SOF-26 SPB2026ZSQ SPB2026ZSR SPB2026ZPCK1 SPB-2026Z SPB-2026ZSR ER39 s-parameters

    RF3171TR13

    Abstract: polar modulation
    Text: RF3171 QUAD-BAND GMSK POLAR EDGE TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2           20 W3 Bias and Power Control VBATT 5 VCTL4 6 Switch


    Original     		PDF RF3171 00mmx6 00mmx1 RF3171 RF3171TR13 RF3171TR7 EIA-481. DS110216 polar modulation

    RF9802

    Abstract: No abstract text available
    Text: RF9802 QUAD BAND GPRS/LINEAR EDGE TRANSMIT MODULE GND RX1 RX2 RX3 18 17 2 16 RX4 Proven PowerStar Architecture Amplifier Die GND 3 SP6T 15 ANTENNA ESD Protection RFIN LB 4 14 GND 13 GND GND 5 Integrated Power Flattening Circuit for Lower Power Variation


    Original     		PDF RF9802 63mmx5 24mmx1 GSM850/EGSM900 DCS1800/PCS1900 RF716x RF9802TR13 RF9802TR7 EIA-481. DS110217 RF9802

    Untitled

    Abstract: No abstract text available
    Text: $ 27LV512 M ic r o c h ip 512K 64K x 8 Low-Voltage CMOS EPROM PACKAGE TYPE FEATURES • W ide voltage range 3.0V to 5.5V • High speed performance - 200 ns access tim e available at 3.0V • CMOS Technology fo r low pow er consum ption - 12 m A Active current at 3.0V


    OCR Scan     		PDF 27LV512 28-pin 32-pin DS11021 27LV512 8x20mm

    DS11021

    Abstract: No abstract text available
    Text: 27LV512 M ic r o c h ip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V


    OCR Scan     		PDF 27LV512 28-pin DS11021 8x20mm 27LV512

    Untitled

    Abstract: No abstract text available
    Text: 27LV512 M ic r o c h ip 512K 64K X8 Low Voltage CMOS EPROM PIN CONFIGURATIONS FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V


    OCR Scan     		PDF 27LV512 28-pin 32-pin 27LV512 DS11021 blG35Gl

    DS11021

    Abstract: tce 1994
    Text: 27LV512 M ic r o c h ip 512K 64K X 8 Low-Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage range 3.0V to 5.5V • High speed performance — 200ns access time available at 3.0V • CMOS Technology for low power consumption — 12mA Active current at 3.0V


    OCR Scan     		PDF 27LV512 27LV512 64K-Byte) 200ns MCHPD001 DS11021C-page DS11021 tce 1994

    Untitled

    Abstract: No abstract text available
    Text: & 27LV512 M icro ch ip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage range 3.0V to 5.5V • High speed performance — 200ns maximum access time at 3.0V • CMOS Technology for low power consumption — 12mA Active current at 3.0V


    OCR Scan     		PDF 27LV512 200ns 100nA 27LV512 64KByte) DS11021A-7