DS100297 Search Results

IF110

Abstract: IXGQ50N60C4D1 tc9050 IGBT 15A TO-3P
Contextual Info: Advance Technical Information High-Gain IGBT w/ Diode IXGQ50N60C4D1 VCES IC90 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 50A 2.50V 40ns TO-3P Maximum Ratings G C E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGH50N60C4D1

Abstract: IXGQ50N60C4D1 G50N60 g50n
Contextual Info: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 46A VCE sat ≤ 2.3V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V

Contextual Info: High-Gain IGBTs w/ Diode VCES = 600V IC110 = 46A VCE sat ≤ 2.3V IXGQ50N60C4D1 IXGH50N60C4D1 High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V

45028

Contextual Info: + A ugust 1998 & Na tio nal Semiconductor o o o o CO CO GO 100313 Low Power Quad Driver •o O General Description Features The 100313 is a m onolithic quad d river w ith tw o O R and two NOR outputs and com m on enable. The com m on input is buffered to m inim ize input loading. If th e D inputs are not

G50N60

Abstract: IXGH50N60C4D1 IXGQ50N60C4D1
Contextual Info: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 36A VCE sat ≤ 2.50V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V

45028

Abstract: F100K J24E W24B
Contextual Info: General Description Features The 100313 is a monolithic quad driver with two OR and two NOR outputs and common enable. The common input is buffered to minimize input loading. If the D inputs are not used the Enable can be used to drive sixteen 50Ω lines. All