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    DRAM ZIP 256KX16 Search Results

    DRAM ZIP 256KX16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation
    UPD48011436FF-FH12-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation
    UPD48011336FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation
    UPD48011418FF-FH12-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation
    7MP4036S12Z Renesas Electronics Corporation 64K X 32 SRAM ZIP MODULE Visit Renesas Electronics Corporation

    DRAM ZIP 256KX16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    27c eeprom

    Abstract: AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F
    Text: STAND ARD MEMOR Y PRODUCT SELECT OR GUIDE ANDARD EMORY ELECTOR CERAMIC CONFIGURATIONS COMMITTED TO PROVIDING HIGH-QUALITY, INNOVATIVE SOLUTIONS TO THE HIGH-RELIABILITY MARKETPLACE STANDARD MEMORY PRODUCTS CERAMIC CONFIGURATIONS SRAM 16MEG MCM Configurable as


    Original     		16MEG 64Kx4) 256Kx1) 256Kx4) 512Kx32 1Mx16, 2Mx32 4Mx16, 1Mx32 2Mx16, 27c eeprom AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F PDF

    mb87020

    Abstract: tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER
    Text: F U J I T S U Master Product Selector Guide FUJITSU MICROELECTRONICS, INC. Visit our web site for the latest information: http://www.fujitsumicro.com Customer Response Center: For semiconductor products, flat panel displays, and PC cards in the U.S., Canada and Mexico,


    Original     		SD-SG-20342-9/96 mb87020 tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER PDF

    GM76C256all

    Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
    Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60


    OCR Scan     		GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410 PDF

    Untitled

    Abstract: No abstract text available
    Text: m i t i » MT4C16256/7/8/9 L 256K X 1 6 WIDE DRAM MICRON • SEMICONDUCTOR. MC WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process


    OCR Scan     		MT4C16256/7/8/9 256KX16DRAM MT4C16257 MT4C16258/9 512-cycle 500mW T4C1S256/7/VU. PDF

    Untitled

    Abstract: No abstract text available
    Text: n i CR ON S E M I C O N D U C T O R IN b3E D • blllS^ OOOflbTb 11b ■ MICRON I k m ,c o n d u c t o » « c NRN M T 4C 16256/7/8/9 L 256K X 16 W ID ED R A M WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions


    OCR Scan     		256KX16DRAM MT4C16257/9 MT4C16258/9 512-cyde MT4C16256/7/8/9 MT4C1C25OTV9L PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM M IC R O N 256KX16DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIG N M EN T Top View OPTIONS • Write Cycle Access BYTE or WORD via WE - (maskable) BYTE or WORD via CÄS (maskable) • Packages


    OCR Scan     		MT4C16256/7/8/9 256KX16DRAM 40-Pin MT4C16256/7/8/9L PDF

    GM76C88AL FW

    Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
    Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20


    OCR Scan     		GM71C1000B/BJ/BZ-60 GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80 200uA) 512cydes/8ms 18DIP GM76C88AL FW 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8 PDF

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


    OCR Scan     		KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ PDF

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


    OCR Scan     		KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble PDF

    HM62V8512LFP

    Abstract: HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT
    Text: Memories Dynamic RAMs DRAM Access time ns 60 80 {HM5116100AS/ATS J F.P. 4k refresh -4Mx4 - {HM5116400AS/ATS ] F.P. 4k refresh 1HM51W16400AS/ATS ] F.P. 4k refresh 1HM5117400AS/ATS ] F.P. 2k refresh -3.3V operation- 16M- 70 -16Mx1 -3.3V operation— 2Mx8 -3.3V operation-


    OCR Scan     		-16Mx1 operation60 HM5116100AS/ATS HM5116400AS/ATS 1HM51W16400AS/ATS 1HM5117400AS/ATS HM51W17400ATS HM5117800BJ/BTT HM5117805BJ/BTT HM51W17800BJ/BTT HM62V8512LFP HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT PDF

    256KX8 SIMM

    Abstract: 512kx8 dram simm dram zip 256kx16 1mx8 DPS 119 61 sram 256kx8
    Text: TABLE OF CONTENTS GENERAL PRODUCT INFORMATION Reference by S iz e . 4 Dense-Pac Microsystems Modules and M onolithics. 5


    OCR Scan     		250ns, 1Mx8/512Kx16/256Kx32, 150-250ns, DPZ128X32VT/DPZ128X32VTP Z256S32IW 512Kx8/256Kx16/128Kx32, 120-250ns, 256KX8 SIMM 512kx8 dram simm dram zip 256kx16 1mx8 DPS 119 61 sram 256kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N • 512K X SEMICONDUCTOR. MC WIDE DRAM 8 MT4C8512/3 WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		MT4C8512/3 350mW 024-cycle MT4C8513 28-Pin 256KX PDF

    DRAM 64kx16

    Abstract: dram zip 256kx16
    Text: Changed Point in '96 DRAM Databook Compared with '95 databook Changed Point in '96 DRAM databook Remarks - Remove TSOP ll(reverse) package General - Remove 80ns version in 5V product - Remove SC Mode, WPB Mode product - Remove 512Kx9 and 256Kx18 product


    OCR Scan     		512Kx9 256Kx18 128Kx8, 64Kx16 512Kx8. 256Kx16 16Mx1, 1Mx16 16Mx4, 4Mx16 DRAM 64kx16 dram zip 256kx16 PDF

    128-QFP

    Abstract: M5M410092 m5m4v4169c
    Text: A -MITSUBISHI ELECTRIC L-31004-0C New Product / Under Development ASM Function Memory cap Organization Type name Supply Voltage V Access time (ns) Synchronous DRAM 4M 4M Synchronous Graphic RAM 16M 2bankxl28Kxl6 2bankxl25Kxl6 2bankx256Kx32


    OCR Scan     		L-31004-0C 256KX16 320KX32 1MX16 320KX32 M5M410092C 128QFP 2bankxl28Kxl6 2bankxl25Kxl6 2bankx256Kx32 128-QFP M5M410092 m5m4v4169c PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b3E D • blll54T DGDflb3fl 302 HIMRN M T 4C 16260/1 256KX16 W ID ED R A M MICRON I s e m ic o n d u c t o rin c WIDE DRAM 256K X 1 6 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages


    OCR Scan     		blll54T 500mW 024-cycle MT4C16260/1 PDF

    1004CL

    Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
    Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page


    OCR Scan     		KM41C1000D# KM41C1000D-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# 128Kx8 KM48C128# KM48C128 KM48C124# 1004CL KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP PDF

    A7 VC 23

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54260B is a 0.6n CM OS high-speed, dynamic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS silicon-gate pro­


    OCR Scan     		MCM54260B 400-mil 100-mil 256KX16DRAM 40-Pin 40-Pln 475-mll A7 VC 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: I * * • " /G PRELIMINARY MICRON I 256K SEMICONDUCTOR MC WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • A ddress entry: ten row -addresses, eight colum naddresses


    OCR Scan     		MT4C16260/1 500mW 024-cycle M74Cl626Q, C1993, PDF

    KM418C256

    Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80


    OCR Scan     		KM41C1000D# KM41C10OOD-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# KM41C4000C# KM41C4000CL# KM41C4002C# KM41V4000C# KM418C256 KM48C2100AL KM416C254 KM44V4100AL KM44C1003 PDF

    256kx16 ucas zip

    Abstract: No abstract text available
    Text: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance


    OCR Scan     		MSM5416256/MSM54V16256 MSM5416256 256KX16 MSM54 DQ8-15 245MG 256kx16 ucas zip PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM 1 • DRAM - Normal Voltage Versions (CMOS) Vcc= +5V±10%, Ta=0°C to +70°C Organization ( Wx b ) Part Number Access Time max. (ns) Cycle Time min. (ns) Power Consumption max. (mW) Operating 4 M x1 M B 8 1 4 1 0 0 A -6 0 6 0 [1 5 ]'1 110 605 M B 8 1 4 1 0 0 A -7 0


    OCR Scan     		PDF

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL PDF

    Untitled

    Abstract: No abstract text available
    Text: JBL i»1M3 M IC R O N MT4C16260/1 256K x 16 WIDE DRAM I WIDE DRAM 256 K x 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process


    OCR Scan     		MT4C16260/1 500mW 024-cycle MT4C16261 WT4C1C26G/1 C1993 MT4C1C260/1 PDF

    dram zip 256kx16

    Abstract: I8833C
    Text: Electronic Design* Inc. Table of Contents Page Letter from the Table o f Contents . 2


    OCR Scan     		PDF