MT4C16257 Search Results

MT4C16257

Contextual Info: MT4C16257 L 256KX 16 DRAM (M IC R O N 256K x 16 DRAM DRAM 5V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V +10% power supply*

BCM 6302

Abstract: micron MT4C database for 4081 ic
Contextual Info: OBSOLETE MARCH 1995 D18A 512K X 8, 256K x 16 D R A M D IE I^IICRON 512Kx 8, 256Kx 16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A G EN ERAL PHYSICAL SPECIFICATIONS • Wafer thickness =18.5 mils ±0.5 mils. • The backside wafer surface Is polished bare silicon.

MT4C16257DJ-6

Abstract: MT4C16257 MT4C16257DJ-6 pin out mt4c16257dj
Contextual Info: 256K x 16 FPM DRAM TECHNOLOGY, INC. MT4C16257 DRAM FEATURES • Industry-standard x16 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • All inputs, outputs and clocks are TTL-compatible

MT4C16257DJ-6

Contextual Info: 256K X 16 FPM DRAM MICRON I TECHNOLOGY, INC. DRAM MT4C16257 FEATURES • In d u stry -sta n d a rd x l6 p in o u ts, tim ing, functions an d packages • H igh-perform ance CM OS silicon-gate process • Single +5V +10% p o w er su p p ly • All in p u ts, o u tp u ts an d clocks are TTL-com patible

MT4C16257

Contextual Info: p iC R MT4C16257 L 256K X 16 DRAM O N DRAM 256K x 16 DRAM 5V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • In d u stry-stan d ard x l 6 p in o u ts, tim in g , fu n ctio n s an d p ackages • H ig h -p erfo rm a n ce C M O S silico n -g a te p ro cess

Contextual Info: MICRON MT4C16257 256K X 16 DRAM I ,lt— DRAM 256K x 16 DRAM 5V, FAST PAGE M O DE PIN ASSIGNMENT Top View • In d u stry -sta n d a rd x l 6 p in o u ts, tim in g , fu n ctio n s an d packages • H ig h -p erfo rm a n ce C M O S silico n -g ate process

Contextual Info: MICRON SEMICONDUCTOR INC b?E D • b 1 1 1 5 MT 000^7=57 711 ■ MRN OBSOLETE JUNE 94 D18A 512K X 8, 256K X 16 DRAM DIE M IC R O N B SEMiCONO'JCTOa INC. 512Kx8, 256Kx16 DRAM DRAM DIE MT4C8512D18A and MT4C16257D18A GENERAL PHYSICAL SPECIFICATIONS • • •

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: ADVANCE MICRON MT4LC16257 S I 2256KX 5 6 K X 16 DRAM DRAM 256K x 16 DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process

Contextual Info: MT2D25632, MT4D51232 256K, 512K x 32 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM MODULE 256K, 512K x 32 1, 2 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Front View OPTIONS 72-Pin SIMM (DD-5) 256K x 32 (DD-6) 512K x 32 o imïïïïirrffrrmmy^^ 1 PIN#

Contextual Info: m i t i » MT4C16256/7/8/9 L 256K X 1 6 WIDE DRAM MICRON • SEMICONDUCTOR. MC WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: '993 Tí* PRELIMINARY MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON I SCHICONDUCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES OPTIONS PIN ASSIGNMENT Top View 40-Pin SOJ (DC-6) Vcc [ 1 DOl [ 2 D02 E 3 D03 E 4 004 [ 5 • Write Cycle Access _ BYTE or WORD via WE

Contextual Info: PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM M IC R O N 256KX16DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIG N M EN T Top View OPTIONS • Write Cycle Access BYTE or WORD via WE - (maskable) BYTE or WORD via CÄS (maskable) • Packages

Contextual Info: m . i s MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON • ««ICOHOliCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply*

MT4C16256DJ-7

Contextual Info: lU IIÖ Q ö lX I I techno lo g y. iN t MT4CÎ6256/7* 256K X 16 DRAM DRAM 256Kx 16DRAM FAST PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CMOS silicon-gate process • Single +5V ±10% pow er supply*

Contextual Info: PRELIMINARY MT4C16256/7/8/9 256KX 16 WIDE DRAM MICRON WIDE DRAM 256K 16 DRAM X FAST-PAGE-MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 500m W active, typical

MA4380

Abstract: DU20
Contextual Info: MT2D25632, MT4D51232 256K. 512K x 32 DRAM M O D U LE M IC R O N 256K, 512K x 32 DRAM MODULE 1 ,2 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT (Front View • JEDEC- and industry-standard pinout in a 72-pin single-in-line m emory module (SIMM) • High-perform ance CM OS silicon-gate process

0Q1335

Contextual Info: PRELIMINARY M T4C 16256/7/8/9 256K X 16 W IDE DRAM I^IICZROIM 256K X 16 DRAM WIDE DRAM FEATURES PIN ASSIGNMENT Top View • I n d u s try -s ta n d a rd x l6 p in o u ts, tim in g , fu n ctio n s a n d p ack ag e s • H ig h -p e rfo rm a n c e C M O S silicon-gate pro c e ss

Contextual Info: NI CR ON S F 1 I C C N D U C T O R INC blllS'-H Ü 0 1 0 0 Q Ü 5 b^ • URN bTE i MICRON I M T4 D 51232 5 12 K X 3 2 D R A M M O D U L E sem iconductorm e. DRAM MODULE 512K x 32 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 72-pin single-in-line

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

Contextual Info: M IC S Q N I IIW - 1 W IH • t s em c o n o u c to r MT2D88C25632, MT4D88C5123Z 1MBr 2MB DRAM CARDS n c DRAM CARD 1, 2 MEGABYTES 256K, 512K x 32; 5.0V FAST PAGE MODE FEATURES • Low power • JEDEC-standard 88-pin DRAM card pinout • Polarized receptacle connector

Contextual Info: DRAM 256K X 16 DRAM 5V, FAST PAGE MODE IEATURES • Industry-standard xl6 pinouts, timii g, functions and packages • High-performance CMOS silicon-ga e process • Single +5V ±10'^ power supply* • Low power, 3mW standby; 375mW ictive, typical • All device pins are fully TTL-compa ible

Contextual Info: m ' i PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM MICRON I SEMICONDUCTOR MC WIDE DRAM 256K x 16 DRAM LOW POWER, EXTENDED REFRESH FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • H igh-perform ance CMOS silicon-gate process

am29f010b-70ef

Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
Contextual Info: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI