1mx1 DRAM
Abstract: DRAM 1Mx1 DRAM 1Mx1 1000
Text: SM536028A02P4SX February 1996 Rev 0 SMART Modular Technologies SM536028A02P4SX 8MByte 2M x 36 CMOS DRAM Module General Description Features The SM536028A02P4SX is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line
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SM536028A02P4SX
SM536028A02P4SX
72-pin,
1mx1 DRAM
DRAM 1Mx1
DRAM 1Mx1 1000
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Untitled
Abstract: No abstract text available
Text: SM536512W April 1996 Rev 0 SMART Modular Technologies SM536512W 2MByte 512K x 36 CMOS DRAM Module General Description Features The SM536512W is a high performance, 2-megabyte dynamic RAM module organized as 512K words by 36 bits, in a 72-pin, leadless, SIMM package.
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SM536512W
SM536512W
72-pin,
512Kx8
512Kx1
60/70/80ns
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MCM91430
Abstract: Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B
Text: Memory Products In Brief . . . Motorola’s memory product portfolio has been expanded to support a broad range of engineering applications. Included in this portfolio are asynchronous devices with access times of 6 ns at 256K–bit density, 6 ns at 5 V 1
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stan00C
1Mx16
MCM4L4400B
MCM5L4100A
MCM54100A
256Kx16
512Kx8
MCM5L4100A
MCM54100A
MCM91430
Motorola CMOS Dynamic RAM 1M
Motorola CMOS Dynamic RAM 1M x 1
1mx1 DRAM DIP
MCM511000A
mcm511000
1K x4 static ram application note
Motorola CMOS Dynamic RAM 16m x 32
TSOP 400 86
MCM69F536B
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Untitled
Abstract: No abstract text available
Text: SM5361000 July 1995 Rev 3 SMART Modular Technologies SM5361000 4MByte 1M x 36 CMOS DRAM Module - Low Profile General Description Features The SM5361000 is a high performance, 4-megabyte dynamic RAM module organized as 1M words by 36 bits, in a 72-pin, leadless single-in-line memory module
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SM5361000
72-pin,
60/70/80ns
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Untitled
Abstract: No abstract text available
Text: SM536023001P4UU December 1996 Rev 1 SMART Modular Technologies SM536023001P4UU 8MByte 2M x 36 CMOS DRAM Module (1Mx16 based) General Description Features The SM536023001P4UU is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line
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SM536023001P4UU
1Mx16
SM536023001P4UU
72-pin,
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SIMM 1Mx9
Abstract: No abstract text available
Text: SMART SM5360140U1P3UU Modular Technologies October 26, 1999 Revision History • October 26, 1999 Datasheet released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SM5360140U1P3UU
72-pin
SM532014001P3UU
SM532N
SIMM 1Mx9
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Untitled
Abstract: No abstract text available
Text: SM5721000B January 1995 Rev 2 SMART Modular Technologies SM5721000B 8MByte 1M x 72 CMOS DRAM Module (Dual Readout) General Description Features The SM5721000B is a high performance, 8-megabyte dynamic RAM module organized as 1M words by 72 bits, in a 168-pin, leadless dual-in-line memory module
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SM5721000B
168-pin,
74FCT2244)
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jeida dram 88 pin
Abstract: jeida 88 pin memory card dram card 60 pin 1mx1 DRAM
Text: DRAM CARD 4 Mega Byte KMCJ5361000 1M X 36 / 2M X 18 Fast P age M ode GENERAL DESCRIPTION FEATURES The KMCJ5361000 is the industry standard high capacity DRAM memory card and consists of • Performance range : SAMSUNG'S advanced TSOP 1Mx4 and 1Mx1 DRAM devices.
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KMCJ5361000
KMCJ5361000
x36/x18
jeida dram 88 pin
jeida 88 pin memory card
dram card 60 pin
1mx1 DRAM
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1000CLP
Abstract: No abstract text available
Text: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C1000CL
KM41C1000CL
576x1
KM41C1000CL-6
KM41C1000CL-7
KM41inued)
20-LEAD
1000CLP
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PDF
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Untitled
Abstract: No abstract text available
Text: KM41C1000CSL CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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OCR Scan
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KM41C1000CSL
KM41C1000CSL
576x1
KM41C1000CSL-6
KM41C1000CSIC
20-LEAD
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PDF
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KM41C1000CJ-6
Abstract: KM41C1000cJ-7 KM41C1000C-6 KM41C1000C-8 KM41C1000CP-6 KM41C1000CG-7 741i DRAM 18DIP km41c1000 KM41C1000CP-7
Text: SAMSUNG E L E C TRONICS INC b?E ]> • 7=îtim42 0G153Ö0 553 I SMGK KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its
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b4142
KM41C1000C
KM41C1000C-6
110ns
KM41C1000C-7
130ns
KM41C1000C-8
150ns
256Kx4
KM41C1000CJ-6
KM41C1000cJ-7
KM41C1000CP-6
KM41C1000CG-7
741i
DRAM 18DIP
km41c1000
KM41C1000CP-7
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Untitled
Abstract: No abstract text available
Text: b?E J> m SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 0Ü1S3ÖG SS3 KM41C1000C CMOS DRAM 1Mx1 Bit C M O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e ra n g e : T h e S am sung KM41C1000C is a C M O S high speed 1,048,576x1 D ynam ic R andom A ccess M emory. Its
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KM41C1000C
KM41C1000C
576x1
110ns
KM41C1000C-7
130ns
KM41C1000C-8
KM41C1000C-6
150ns
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1mx1 DRAM
Abstract: AA2035 UM82C380 256KB static RAM 6182s UM82152 UM82C384 AADS PA10 Unicorn Microelectronics
Text: UNICORN MICROE LE CTRON ICS E4E D • =1270700 QOQOTOH T ■ UM82C389 Austek Cache Interface I General Description The UM82C389 Cache Interface Chip is one of the UMC UM82C380 series High End AT HEAT chip set. As a DRAM controller, UM82C389 works in tandem with
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UM82C389
UM82C389
UM82C380
UM82152
UM80386
UM82C384
256Kx1
1mx1 DRAM
AA2035
256KB static RAM
6182s
AADS
PA10
Unicorn Microelectronics
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PDF
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5117400
Abstract: sem 2500 7212 tube
Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1
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P-SOJ-26/20-1
J-26/20-5?
P-SOJ-28-2
P-SOJ-40-1
P-TSOPII-26/20-1
P-SOJ-26/24-1
1000BJ
514256BJ
514100BJ
514400BJ
5117400
sem 2500
7212 tube
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KM44C1000CJ
Abstract: KMM5361000C
Text: DRAM MODULE 4 Mega Byte KMM5361000C2/C2G Fast Page Mode 1Mx36 DRAM SIMM Using Parity PLCC, 5V G EN E R A L D ESCRIPTIO N FEATURES The Samsung KMM5361000C2 is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361000C2 consists of eight CMOS
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KMM5361000C2/C2G
1Mx36
KMM5361000C2
20-pin
18-pin
72-pin
KM44C1000CJ
KMM5361000C
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1mx1 DRAM
Abstract: No abstract text available
Text: KM41C1000D CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 1 bit Fast Page M ode CM OS DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the same row. Access tim e -6, -7 or -8 , pow er consum ption (Norm al
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KM41C1000D
1000D
1mx1 DRAM
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Untitled
Abstract: No abstract text available
Text: KM M5361000B1 /B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000B1 is a 1M bits x 36 Dynamic RAM KMM5361000B1-6 tR A C tcA c tn c 60ns 15ns 110ns high density memory module. The Sam sung
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M5361000B1
KMM5361000B1
KMM5361000B1
KMM5361000B1-6
KMM5361000B1-7
KMM5361000B1-8
110ns
130ns
150ns
20-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: S A M S U N G E L E C T R O N I C S INC b7 E D • 7 Tb4142 KMM5361000B/BG 0015150 SGÖ H i S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5361000B is a 1M bits x 36 Dynam ic RAM high density memory module. The Samsung
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OCR Scan
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Tb4142
KMM5361000B/BG
KMM5361000B
20-pin
72-pin
110ns
KMM5361000B-7
130ns
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E T> WM T T b m M E KMM5361OOOBV/BVG 0015122 GTT • SMGK DRAM MODULES 1Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5361000BV is a 1M bitsx36 Dynamic RA M high density memory module. The Samsung
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KMM5361OOOBV/BVG
1Mx36
KMM5361000BV
bitsx36
20-pin
72-pin
KMM5361000BV-7
130ns
5361OOOBV-8
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PDF
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Untitled
Abstract: No abstract text available
Text: KM41C1000D CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fam ily of 1,048,576 x 1 bit Fast Page M ode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells within the sam e row. Access tim e -6, -7 o r -8 , pow er consum ption (Norm al
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OCR Scan
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KM41C1000D
1000D
oper12.
GQ2311Ö
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7Sb4142 0014517 721 KMM5361000B1/B1G DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tRAC tcAC tra KMM5361000B1-6 60ns 15ns 110ns KMM5361000B1-7
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OCR Scan
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7Sb4142
KMM5361000B1/B1G
110ns
KMM5361000B1-7
130ns
KMM5361000B1-8
KMM5361000B1
20-pin
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PDF
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0015142
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b 7 E ]> • DDS I SHGK 7 *b4 1 4 E D 0 1 5 1 4 0 KMM5361000B2/B2G DRAM MODULES 1M x36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tRAC tcAC tRC KM M5361000B2-6 60ns 15ns 110ns KMM5361000B2-7 70ns 20ns
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KMM5361000B2/B2G
M5361000B2-6
110ns
KMM5361000B2-7
130ns
M5361000B2-8
150ns
M5361000B2
5361000B2
20-pin
0015142
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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74FCT245
Abstract: 74FCT543 V96BMC m1l4b5 casa30 a2054 aab1
Text: AHî e 1992 V96BM C Burst Memory Controller Advance Information i960 CA Support Product! F e a tu re s • Interfaces directly to the ¡960 CA • On Chip Memory Address Multiplexer/Drivers • • • • • "Same Row" Address Compare • Software-Configured operational parameters
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V96BMC
256Kb
V96BMC
74FCT245
74FCT543
m1l4b5
casa30
a2054
aab1
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