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    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364E080 8 4CT0-C Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M364E080(8)4CT0-C DRAM MODULE M364E080(8)4CT0-C


    Original     		M364E080 8Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364E80 8 4CS Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM364E80(8)4CS DRAM MODULE KMM364E80(8)4CS


    Original     		KMM364E80 8Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364C080 8 4CT0-C Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64M components are applied for this module. M364C080(8)4CT0-C DRAM MODULE M364C080(8)4CT0-C


    Original     		M364C080 8Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364C80 8 4CS Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64M components are applied for this module. KMM364C80(8)4CS DRAM MODULE KMM364C80(8)4CS KMM364C80(8)4CS Fast Page Mode


    Original     		KMM364C80 8Mx64 4Mx16 4Mx16, 4Mx64bits 4Mx16bits PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)


    OCR Scan     		IBM11M2645H 2Mx64 104ns 124ns PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11M2730H 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for ECC applications System Performance Benefits: • 2Mx72 Fast Page Mode DIMM - Buffered inputs except RAS, Data - Reduced noise (32 Vss/Vcc Pins)


    OCR Scan     		IBM11M2730H 2Mx72 110ns 130ns GGG24flE PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11M1640L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity applications • System Performance Benefits: -Buffered inputs except RAS, Data -Reduced noise (32 VSsA /cc P^s)


    OCR Scan     		IBM11M1640L 110ns 130ns PDF

    1X359

    Abstract: No abstract text available
    Text: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1 Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 tRAC ; RAS Access Tim e 60ns ; 70ns tcAC ! CAS Access Tim e 20ns ! 25ns W | Access Tim e From Address


    OCR Scan     		IBM11M1645L 1X359 PDF

    SO-DIMM 144-pin

    Abstract: No abstract text available
    Text: IBM11T1640L 1M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns


    OCR Scan     		IBM11T1640L 110ns 130ns Vss/18Vcc 128ms 00D0751 IBM11T1640L 50H8015 SA14-4462-00 SO-DIMM 144-pin PDF

    OC81

    Abstract: No abstract text available
    Text: TOSHIBA UNDER DEVELOPMENT TMP93CM84 LOW POWER CMOS 16-bit MICROCONTROLLERS TMP93CM84F 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93CM84F is high-speed advanced 16-bit microcontroller developed for controlling medium to large-scale equipment. It enable low power consumption


    OCR Scan     		TMP93CM84 16-bit TMP93CM84F TMP93CM84F 80-pin LQFP80-P-1212-0 OC81 PDF

    T3B5

    Abstract: DQ67-DQ70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random A cce ss Memory Module The M C M 64400 is a dynam ic random acce ss memory DRAM module organized as 4,194,304 x 64 bits. The module is a JE D E C -s ta n d a rd 168-lead


    OCR Scan     		MCM64400 168-lead 400-m b3b7251 T3B5 DQ67-DQ70 PDF

    DQ45D

    Abstract: No abstract text available
    Text: HB56UW272EJN-6B/7B 2,097,152-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 byte DIMM HITACHI ADE-203-586A Z Preliminary Rev. 0.1 May. 23,1996 Description The HB56UW 272EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been


    OCR Scan     		HB56UW272EJN-6B/7B 152-word 72-bit 168-pin ADE-203-586A HB56UW 272EJN 16-Mbit DQ45D PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11 M4645B IBM11 M4645C 4M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module - Buffered inputs except RAS, Data • 4Mx64 Extended Data Out Page Mode DIMM • Performance: - 4 Byte Interleave enabled - Byte write, byte read accesses


    OCR Scan     		IBM11 M4645B M4645C 4Mx64 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: -Buffered inputs except RAS, Data -Reduced noise (32 W s s ^ C C pins) -4 Byte Interleave enabled -Byte write, byte read accesses


    OCR Scan     		IBM11M1645L 1Mx64 PDF

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 1152 Megabit CMOS DRAM MICROSYSTEMS DP3D16MS72PKW5 ADVANCED INFORMATION D ESCRIPTIO N : The DP3D16MS72PKW5 is the 16 Meg x 72 Dynamic RAM module in the family of Super DIMM modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of twentyfour dynamic RAM stacks


    OCR Scan     		DP3D16MS72PKW5 DP3D16MS72PKW5 168-pin 30A160-10 30A16CM0 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM11N4645B/C IBM11N4735B/C 4M x 64/72 DRAM MODULE • System Performance Benefits: Features • 168 Pin JED EC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 4Mx64, 4Mx72 Extended Data Out Page Mode DIMMs • Performance: -60 -70 Wc RAS Access Time


    OCR Scan     		IBM11N4645B/C IBM11N4735B/C 4Mx64, 4Mx72 104ns 124ns 0000M52 PDF

    DM 4203

    Abstract: ns 4203
    Text: s z JO I. 0 ß E d 9 6 /2 1- pssjAay f0 "£ I-VS SOSt'HOS ;u0 ujnoop s|L|; jo pu0 0 4 ; ;e suoiswoja 0 4 ; o; poiqns j 0 i|ijn|. s| 0 sn P0/U0S0J sm&j uv uo^EJodjoQ iMai S 3 1- VZY U7 Ot? 991 *8 S6 H. n n iin n n n n n n ^ O t?6 H S8 I- (>|OBg ( lu o jj)


    OCR Scan     		90UELUJ0jJ9d d-891. DM 4203 ns 4203 PDF

    33I35

    Abstract: No abstract text available
    Text: IBM11T1645NP IBM11T2645NP 1M/2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications • 1M/2Mx64 Extended Data Out SO DIMM


    OCR Scan     		IBM11T1645NP IBM11T2645NP 1M/2Mx64 256ms GA14-4478-01 33I35 PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56S872ESN Series, HB56S864ESN Series 8.388.608-word x 72-bit High Density Dynamic RAM Module 8.388.608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-778A Z Rev. 1.0 Apr. 30, 1997 Description The HB56S872ESN, HB56S864ESN belong to 8 Byte DIMM (Dual In-line Memory Module) family, and


    OCR Scan     		HB56S872ESN HB56S864ESN 608-word 72-bit 64-bit ADE-203-778A HB56S872ESN, Nippon capacitors PDF

    KH U10

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview 256K x 72 Bit BurstRAM Multichip Module MCM72FB8ML MCM72PB8ML The 256K x 72 multichip module uses four 4M bit synchronous fast static RAMs designed to provide a burstable, high performance, secondary cache for the


    OCR Scan     		MCM72PB8ML 72FB8 72PB8 MCM72FB8 MCM72PB8 MCM72FB8ML7 MCM72PB8ML3 MCM72FB8ML8 KH U10 PDF

    5e012

    Abstract: DQ52-DQ53 Nippon capacitors
    Text: HB56AW872EJK Series 8,388,608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-719A Z Rev. 1.0 Feb. 20, 1997 Description The HB56AW872EJK belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The


    OCR Scan     		HB56AW872EJK 608-word 72-bit ADE-203-719A 16-Mbit HM51W16400) 16-bit 74LVT16244) 5e012 DQ52-DQ53 Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 M 2 6 4 0 H IB M 1 1 M 2 6 4 0 H B 2M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity applications • System Performance Benefits: • 2Mx64 Fast Page Mode DIMM - • Performance:


    OCR Scan     		2Mx64 130ns 110ns PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB56SW872ESNJ Series, HB56SW864ESNJ Series 8.388.608-word x 72-bit High Density Dynamic RAM Module 8.388.608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-764B Z Rev. 2.0 Jun. 10, 1997 Description The HB56SW872ESNJ, HB56SW864ESNJ belong to 8 Byte DIMM (Dual In-line Memory Module)


    OCR Scan     		HB56SW872ESNJ HB56SW864ESNJ 608-word 72-bit 64-bit ADE-203-764B HB56SW872ESNJ, HB56SW Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: I B M 1 1M 1 6 4 5 L 1M X 64 DRAM MODULE Preliminary System Performance Benefits: Features -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc Pins) -4 Byte Interleave enabled -Byte write, byte read accesses -Buffered PDs • 168 Pin JEDEC Standard, 8 Byte Dual In-line


    OCR Scan     		1Mx64 104ns 124ns 00023B7 PDF