DQ45D Search Results

Contextual Info: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)

Contextual Info: IBM11M2730H 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for ECC applications System Performance Benefits: • 2Mx72 Fast Page Mode DIMM - Buffered inputs except RAS, Data - Reduced noise (32 Vss/Vcc Pins)

Contextual Info: IBM11M1640L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity applications • System Performance Benefits: -Buffered inputs except RAS, Data -Reduced noise (32 VSsA /cc P^s)

1X359

Contextual Info: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1 Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 tRAC ; RAS Access Tim e 60ns ; 70ns tcAC ! CAS Access Tim e 20ns ! 25ns W | Access Tim e From Address

SO-DIMM 144-pin

Contextual Info: IBM11T1640L 1M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns

Contextual Info: DRAM MODULE M364E080 8 4CT0-C Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M364E080(8)4CT0-C DRAM MODULE M364E080(8)4CT0-C

OC81

Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP93CM84 LOW POWER CMOS 16-bit MICROCONTROLLERS TMP93CM84F 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93CM84F is high-speed advanced 16-bit microcontroller developed for controlling medium to large-scale equipment. It enable low power consumption

T3B5

Abstract: DQ67-DQ70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random A cce ss Memory Module The M C M 64400 is a dynam ic random acce ss memory DRAM module organized as 4,194,304 x 64 bits. The module is a JE D E C -s ta n d a rd 168-lead

DQ45D

Contextual Info: HB56UW272EJN-6B/7B 2,097,152-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 byte DIMM HITACHI ADE-203-586A Z Preliminary Rev. 0.1 May. 23,1996 Description The HB56UW 272EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: DRAM MODULE KMM364E80 8 4CS Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM364E80(8)4CS DRAM MODULE KMM364E80(8)4CS

Contextual Info: DRAM MODULE M364C080 8 4CT0-C Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64M components are applied for this module. M364C080(8)4CT0-C DRAM MODULE M364C080(8)4CT0-C

Contextual Info: IBM11 M4645B IBM11 M4645C 4M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module - Buffered inputs except RAS, Data • 4Mx64 Extended Data Out Page Mode DIMM • Performance: - 4 Byte Interleave enabled - Byte write, byte read accesses

Contextual Info: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: -Buffered inputs except RAS, Data -Reduced noise (32 W s s ^ C C pins) -4 Byte Interleave enabled -Byte write, byte read accesses

ICE5L

Contextual Info: IBM11M1640B = = = = - = 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity applications System Performance Benefits: - • 1Mx64 Fast Page Mode DIMM • Performance: -60 -70 Buffered inputs except RAS, Data

Contextual Info: DRAM MODULE KMM364C80 8 4CS Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64M components are applied for this module. KMM364C80(8)4CS DRAM MODULE KMM364C80(8)4CS KMM364C80(8)4CS Fast Page Mode

Contextual Info: IBM11N4645B/C IBM11N4735B/C 4M x 64/72 DRAM MODULE • System Performance Benefits: Features • 168 Pin JED EC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 4Mx64, 4Mx72 Extended Data Out Page Mode DIMMs • Performance: -60 -70 Wc RAS Access Time

DM 4203

Abstract: ns 4203
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33I35

Contextual Info: IBM11T1645NP IBM11T2645NP 1M/2M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Au contacts • Optimized for byte-write non-parity applications • 1M/2Mx64 Extended Data Out SO DIMM

Nippon capacitors

Contextual Info: HB56S872ESN Series, HB56S864ESN Series 8.388.608-word x 72-bit High Density Dynamic RAM Module 8.388.608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-778A Z Rev. 1.0 Apr. 30, 1997 Description The HB56S872ESN, HB56S864ESN belong to 8 Byte DIMM (Dual In-line Memory Module) family, and

KH U10

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview 256K x 72 Bit BurstRAM Multichip Module MCM72FB8ML MCM72PB8ML The 256K x 72 multichip module uses four 4M bit synchronous fast static RAMs designed to provide a burstable, high performance, secondary cache for the

5e012

Abstract: DQ52-DQ53 Nippon capacitors
Contextual Info: HB56AW872EJK Series 8,388,608-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-719A Z Rev. 1.0 Feb. 20, 1997 Description The HB56AW872EJK belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: IB M 1 1 M 2 6 4 0 H IB M 1 1 M 2 6 4 0 H B 2M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity applications • System Performance Benefits: • 2Mx64 Fast Page Mode DIMM - • Performance:

Nippon capacitors

Contextual Info: HB56SW872ESNJ Series, HB56SW864ESNJ Series 8.388.608-word x 72-bit High Density Dynamic RAM Module 8.388.608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-764B Z Rev. 2.0 Jun. 10, 1997 Description The HB56SW872ESNJ, HB56SW864ESNJ belong to 8 Byte DIMM (Dual In-line Memory Module)

Contextual Info: I B M 1 1M 1 6 4 5 L 1M X 64 DRAM MODULE Preliminary System Performance Benefits: Features -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc Pins) -4 Byte Interleave enabled -Byte write, byte read accesses -Buffered PDs • 168 Pin JEDEC Standard, 8 Byte Dual In-line