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    DQ116 Search Results

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    DQ116 Price and Stock

    Eaton Bussmann MDQ-1-16

    FUSE GLASS 62.5MA 250VAC 3AB 3AG
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    DigiKey MDQ-1-16 Bulk 5
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    TME MDQ-1-16 5
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    • 100 $34.6
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    Eaton Bussmann BK-MDQ-1-16

    FUSE GLASS 62MA 250VAC 3AB 3AG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BK-MDQ-1-16 Bulk 100
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    • 100 $10.4539
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    SiTime Corporation SIT9002AI-233N33DQ116.62500

    MEMS OSC XO 116.6250MHZ LVDS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT9002AI-233N33DQ116.62500 1
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    SiTime Corporation SIT9002AI-233N33DQ116.62500T

    HIGH PERFORMANCE SPREAD SPECTRUM OSCILLATOR, -40 TO 85C, 5032, 50PPM, 3.3V, 116.625MHZ, SD, LVDS, NORMAL, -1.0%, SMD - Tape and Reel (Alt: SIT9002AI-233N33DQ)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT9002AI-233N33DQ116.62500T Reel 24 Weeks 3,000
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    SiTime Corporation SIT9002AI-233N33DQ116.625000Y

    Clock Oscillator 116.625MHz 3.3V 6-Pin QFN T/R - Tape and Reel (Alt: SIT9002AI-233N33DQ)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT9002AI-233N33DQ116.625000Y Reel 24 Weeks 1,000
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    DQ116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EDI4164MEV50SM

    Abstract: EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI
    Text: EDI4164MEV-RP HI-RELIABILITY PRODUCT 4Mx16 EDO Extended Data Out Dynamic RAM 3.3V FEATURES • 4 Meg x 16 bit CMOS Dynamic RAM ■ RAS - Only, CAS-before-RAS, and HIDDEN refresh capability ■ Package: ■ Low Operating Power Dissipation ■ Access Time: 50, 60 and 70ns


    Original     		PDF EDI4164MEV-RP 4Mx16 EDI4164MEV50SM EDI4164MEV60SM EDI4164MEV70SM EDI4164MEV50SI EDI4164MEV60SI EDI4164MEV70SI EDI4164MEV50SM EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


    Original     		PDF UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131

    DQ111

    Abstract: No abstract text available
    Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


    Original     		PDF SM544083U74S6UU 128MByte 4Mx16 DQ111

    Untitled

    Abstract: No abstract text available
    Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,


    Original     		PDF SM544028002BXGU 32MByte 32-megabyte 100-pin, 72-bit 70/80ns

    GS841E18A

    Abstract: GS841E18AT-180 256k x 18 119bga TS/103/02 B180
    Text: GS841E18AT/B-180/166/150/130/100 180 MHz–100 MHz 3.3 V VDD 3.3 V and 2.5 V I/O 256K x 18 Sync Cache Tag TQFP, BGA Commercial Temp Industrial Temp Features • 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O supply • Dual Cycle Deselect DCD • Intergrated data comparator for Tag RAM application


    Original     		PDF GS841E18AT/B-180/166/150/130/100 GS841E18A GS841E18AT-180 256k x 18 119bga TS/103/02 B180

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


    Original     		PDF HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99

    GS84118-2000207

    Abstract: DQ116
    Text: GS84118T/B-166/150/133/100 166 MHz–100 MHz 8.5 ns–12 ns 3.3 V VDD 3.3 V and 2.5 V I/O 256K x 18 Sync Cache Tag TQFP, BGA Commercial Temp Industrial Temp Features • 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O supply • Intergrated data comparator for Tag RAM application


    Original     		PDF GS84118T/B-166/150/133/100 GS84118-2000207 DQ116

    Untitled

    Abstract: No abstract text available
    Text: 1, 2 MEG x 64 DRAM SODIMMs TECHNOLOGY, INC. MT4LDT164H X (S) MT8LDT264H(X)(S) SMALL-OUTLINE DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) 144-Pin Small-Outline DIMM (DF-7) 1 Meg x 64 (shown), (DF-8) 2 Meg x 64 • JEDEC- and industry-standard pinout in a 144-pin,


    Original     		PDF 144-pin, 024-cycle 048-cycle 128ms MT4LDT164H 144-PIN

    MT4LC4M16R6

    Abstract: MT4LC4M16R6TG5 MT4LC4M16R6TG-5
    Text: PRELIMINARY 4 MEG x 16 EDO DRAM TECHNOLOGY, INC. MT4LC4M16R6 DRAM FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x16 pinout, timing, functions and package • 12 row, 10 column addresses • High-performance CMOS silicon-gate process • All inputs, outputs and clocks are LVTTL-compatible


    Original     		PDF MT4LC4M16R6 096-cycle 50-Pin MT4LC4M16R6 MT4LC4M16R6TG5 MT4LC4M16R6TG-5

    DQ124

    Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
    Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


    Original     		PDF UG016E14488HSG 200-Pin 256MB 2560mil) DQ124 DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79

    DQ112

    Abstract: UG016C14488HSG-6 DQ100 DQ88
    Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


    Original     		PDF UG016C14488HSG 200-Pin 256MB 2560mil) DQ112 UG016C14488HSG-6 DQ100 DQ88

    W78M32VP

    Abstract: W78M64VP-XBX x0355
    Text: White Electronic Designs W78M64VP-XBX *ADVANCED 8Mx32 Flash 3.3V Page Mode Multi-Chip Package FEATURES Access Times of 110, 120ns Secured Silicon Sector region Packaging Page Mode • 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random


    Original     		PDF W78M64VP-XBX 8Mx32 120ns 128-word/256-byte 8-word/16-byte 128KB 20-year 13x22mm W78M32VP-XBX 8Mx64 W78M32VP W78M64VP-XBX x0355

    Untitled

    Abstract: No abstract text available
    Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8


    Original     		PDF UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil)

    sht22

    Abstract: SHT12 5BE1 EL114 6nc3 SHT20 RAM128KX8 SHT13 VG-468 57BE2
    Text: 5 EBSA-110 SHEET SIG 4 Schematic PREFIXES 3 2 BAN#=EBSA-110 REV#=REVB Directory 1 - STRONGARM SHT20, C 1 - Schematic sht 2 - Block sht 3 CPU_, sht 4 - Debug sht 5 - SSRAM sht 6 BUF_, IO_ Address sht 7 MUX_, SIM_ DRAM sht 8 CTA_, CTB_ Control sht 9 CTA_, CTB_


    Original     		PDF EBSA-110 SHT20, ebsa110 sht22 SHT12 5BE1 EL114 6nc3 SHT20 RAM128KX8 SHT13 VG-468 57BE2

    DG123

    Abstract: DG125 Dtl 937 DG118
    Text: g { f iü i DQ116111811231125 4 and 5-Channel Drlver-MOS-FET Switch Combinations M ilitary Series - 5 5 ° C t o + 12 5°C FEATURES GENERAL DESCRIPTION • This series includes devices w ith fo u r and five channel sw itching cap ability. Each channel is composed o f a driver


    OCR Scan     		PDF DG118 DG125 DG116 DG123 Dtl 937

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N ‘ » Eg R>4'n' DRAM MT4LC4M16R6 FEATURES • Single +3.3V +0.3V pow er supply • Industry-standard xl6 pinout, timing, functions and package • 12 row, 10 colum n addresses • High-performance CMOS silicon-gate process • All inputs, outputs and clocks are LVTTL-compatible


    OCR Scan     		PDF MT4LC4M16R6 096-cycle 50-Pin

    PBSRAM

    Abstract: MC8031
    Text: M C80364K32, MC8031 28K32 6 4 K X 3 2 , 1 2 8 K X 3 2 PIPELINE BURST S R A M M o Sys 6 - - • High performance, low power pipeline burst SRAM


    OCR Scan     		PDF C80364K32, MC8031 28K32 83-133MHz 100-Pin PBSRAM

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M564R16CJ.TP-10,-12,-15 í f at Nc*,ce » • uSume Pdid 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M564R16C is a family of 65536-word by 16-bit static RAMs, fabricated with the high performance CMOS process and


    OCR Scan     		PDF M5M564R16CJ TP-10 1048576-BIT 65536-WORD 16-BIT) M5M564R16C 16-bit AO-15 DQt-16

    Untitled

    Abstract: No abstract text available
    Text: 9 Jul ,1997 MITSUBISHI LSIs M5M51016BTP,RT-12VL-I, -12VLL-I 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION T h e M 5 M 5 1 0 1 6 B T P , R T a re a 1 0 4 8 5 7 6 -b it C M O S s ta tic RAM o rg a n ize d a s 6 5 5 3 6 w o rd b y 1 6-b it w h ich a re fa b ric a te d u sing


    OCR Scan     		PDF M5M51016BTP RT-12VL-I, -12VLL-I 1048576-BIT 65536-WQRD 16-BIT

    KM416C1200

    Abstract: TCA 1085 km416c1200j
    Text: CMOS DRAM KM416C1200 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P e rfo rm a n c e range: The S am sung KM416C1200 is a CMOS h ig h speed 1,048,576 bit x 16 D ynam ic Random A ccess Memory. Its de sig n is op tim ize d fo r high pe rform ance a p p lica tio n s


    OCR Scan     		PDF KM416C1200 KM416C1200-7 KM416C1200-8 KM416C1200-10 130ns 150ns 180ns KM416C1200 TCA 1085 km416c1200j

    Untitled

    Abstract: No abstract text available
    Text: 9 J u l ,1997 MITSUBISHI LSIs M5M51016BTP, RT-12VL, -12VLL 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of


    OCR Scan     		PDF M5M51016BTP, RT-12VL, -12VLL 1048576-BIT 65536-WQRD 16-BIT 51016BTP

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51016BTP,RT-1 OVL-I, -10VLL-I 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of


    OCR Scan     		PDF M5M51016BTP -10VLL-I 1048576-BIT 65536-WQRD 16-BIT M5M51016BTP, 51016BTP 44-pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4LC4M16N3/R6 4 MEG X 16 DRAM l^ iic n g N 4 M E G X 16 D R A M S DRAM 3.3V, EDO PAGE MODE PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard x l6 pinout, timing, functions and package • 13 row-addresses, 9 column-addresses (N3) or


    OCR Scan     		PDF MT4LC4M16N3/R6 096-cycle 50-Pin C4M16N3/R6 0D1334Ã

    Untitled

    Abstract: No abstract text available
    Text: KM416C256LL CMOS DRAM 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256LL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM416C256LL 256Kx KM416C256LL 130ns KM416C256LL-8 150ns KM416C256LL-10 100ns 180ns KM416C256LL-7