DIODE ZG 21 Search Results

semikron thyristor

Contextual Info: SKT Tabl. 15,2 Qu ZG bond. power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter Absolute Maximum Ratings Symbol Conditions Values Units +, +,(    ! 0( $%& 1 ! +2( $% +3# * 1 ! +2( $%& +( &   

Contextual Info: SKT Tabl. 15,2 Qu ZG bond.SEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions Values Units +, +,(    ! 0( $%& 1 ! +2( $% +3# * 1 ! +2( $%& +( &    2"( * 1 ! +2( $%& +( &   

Contextual Info: SKT 15,2 Qu ZG bond.SEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions Values Units +, +,(    ! 0( $%& 1 ! +2( $% +3# * 1 ! +2( $%& +( &    2"( * 1 ! +2( $%& +( &   

Contextual Info: SKT Tabl. 15,2 Qu ZG bond.SEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions Values Units +, +,(    ! 0( $%& 1 ! +2( $% +3# * 1 ! +2( $%& +( &    2"( * 1 ! +2( $%& +( &   

D-68623

Abstract: HTZ260G14K HTZ260G16K HTZ260G19K HTZ260G22K
Contextual Info: HTZ260G Series High Voltage Diode Rectifier Module IF AV = 4.7 A VRRM = 22400 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ260G22K HTZ260G19K HTZ260G16K HTZ260G14K 22400 19600 16800 14000 23800 21000 18200 15400 CIRCUIT DIAGRAM LARONTROL

diode SKN molybdenum

Contextual Info: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3

Relais ITT

Abstract: SDS Relais Rapa Relais feme relais Relais gruner 9059 Zettler relais az 421 Relais gruner 9066 ZG450024 haller relais sds relais rs-24 v
Contextual Info: Produktübersicht Relaiskoppler / Relaissockel Relaiskoppler mit 1 Schließer oder 1 Öffner Relaiskoppler mit 2,8 mm Flachsteckanschluß Seite 6-5/4 Relaiskoppler 1 Öffner / 1 Schließer Seite 6-5/5 Relaiskoppler mit 2 x 1 Wechsler oder 3 x 1 Schließer

RD02MUS2

Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
Contextual Info: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15

diode gp 434

Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.

schrack zg relay

Abstract: em18 PCB 4-pole 3.5mm Socket em-18 diode zg 36 EM01 EM09 EM-04 PCB mounted 230 V relay EM05
Contextual Info: General Purpose Relays Accessories Miniature Relay PT Q Easy replacement of relays on a densely packed DIN rail Q Socket with logical arrangement of control/load terminals Q High quality rising clamp terminals Q Captive combination terminal screws Q No reduction of protection class or creepage/clearance with

xaar

Contextual Info: SK150GD066T =' S BR TIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PI:9 =U S BR TI <I =U S @YR TI <IZ; SEMITOP 4 IGBT Module .5'( WXX P @R@ J =' S YX TI @B@ J CXX J [ BX P =U S @BR TI W _' =' S BR TI @`a J =' S YX TI @RB J BXX

schrack zg relay

Abstract: PCB 4-pole 3.5mm Socket em18 EM01 PT78730 diode zg 36 s0427b
Contextual Info: General Purpose Relays Accessories Miniature Relay PT Q Easy replacement of relays on a densely packed DIN rail Q Socket with logical arrangement of control/load terminals Q High quality rising clamp terminals Q Captive combination terminal screws Q No reduction of protection class or creepage/clearance with

093.266

Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
Contextual Info: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability

RD07MVS2

Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05

diode gp 434

Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)

bubba oscillator

Abstract: LM358 and wein bridge oscillator amplitude controlled Wien Bridge Oscillator ua709 OP AMP COOKBOOK uA709 cross reference uA709 application op amp transistor current booster circuit uA709 substitute single-supply wein bridge oscillator
Contextual Info: Op Amps For Everyone Ron Mancini, Editor in Chief Design Reference September 2001 Advanced Analog Products SLOD006A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at

24VDC 15A 4 POLE RELAY

Abstract: PTF22012 PTF21012 12vdc tyco relay PTF21110 PTF22048 PTF20048 relay 220vdc 10a 1800VA VARISTOR 440VAC
Contextual Info: General Purpose Relay PT series ver.2.1 PT Faston 2 pole 15A, DC or AC Coil 2 C/O contacts 15A Rated Current Relay Height 29mm Built-in LED Green color for DC, RED color for AC Cadmium-free contact material Universal use in control and automation. Mounting options include socket, PCB, and top flange

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD07MUS2B

Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

CNC ELECTRICAL DIAGRAM

Abstract: ron 350 PI3A3160C PI5A3158 TDFN-12
Contextual Info: PI3A3160C 3.0V, SOTiny 0.8Ω Dual SPDT Analog Switch with -1.0V to 4.2V Operating Range Features Description • Analog Signal Range: -1.0V to VCC when switch is “ON” The PI3A3160C is a high-bandwidth, fast Dual single-pole doublethrow SPDT CMOS switch. It can be used as an analog switch or

DIODE GP 704

Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

T7026

Abstract: QFN20 T7026-PGP T7026-PGQ T7026-PGS 33 GP 4563D
Contextual Info: Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier Pout Typically 28 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode

RD07MUS2B

Abstract: RD07MUS2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

T7026

Abstract: QFN20 T7026-PGP T7026-PGPW T7026-PGQ T7026-PGQW 33 GP ATMEL QFN20
Contextual Info: Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier Pout Typically 28 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode