DIODE UF 400 Search Results

Contextual Info: UF 4001.UF 4007, UF 4007-1200 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter -3 Axial lead diode Ultrafast silicon rectifier diodes UF 4001.UF 4007, UF 4007-1200 8  9  4  9  9 +

Contextual Info: UF 4001.UF 4007, UF 4007-1200 -3 Axial lead diode Ultrafast silicon rectifier diodes UF 4001.UF 4007, UF 4007-1200 8  9  4  9  9 + 0+  4  9  9 +   9    9 3  5 "' 5 " 5 "= 5 "" 5 "2 5 " 5 "1 #88 #

diode IN 4007

Abstract: uf 4007 rectifier diode diode 4007 UF 4007 Diode in 4007 diode 4007 uf 1200 IN 4007 diode data diode 4001 diode IN 4001 in 4001 rectifier diode
Contextual Info: UF 4001.UF 4007, UF 4007-1200 -3 Axial lead diode Ultrafast silicon rectifier diodes UF 4001.UF 4007, UF 4007-1200 8  9  4  9  9 + 0+  4  9  9 +   9    9 3  5 "' 5 " 5 "= 5 "" 5 "2 5 " 5 "1 #88 #

Contextual Info: UF 4001.UF 4007 -3 Axial lead diode Ultrafast silicon rectifier diodes UF 4001.UF 4007 8  9  4  9  9 + 0+  4  9  9 +   9    9 3  5 "' 5 " 5 "= 5 "" 5 "2 5 " #88 # 2 '  "  > #80 # 2 '

diode UF-4007

Abstract: diode IN 4007 4007 diode 4007 in 4007 diode diode 4001 uf 4007 rectifier diode 4001 silicon diode IN 4007 diodes diode
Contextual Info: UF 4001.UF 4007 -3 Axial lead diode Ultrafast silicon rectifier diodes UF 4001.UF 4007 8  9  4  9  9 + 0+  4  9  9 +   9    9 3  5 "' 5 " 5 "= 5 "" 5 "2 5 " #88 # 2 '  "  > #80 # 2 '

Contextual Info: 1N5147A asi TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: -nrB The 1N5147A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. I' UF MAXIMUM RATINGS t If 250 mA Vr 60 V P diss 400 mW @ Ta = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C

UF10005

Abstract: TO-220AC UF10-005
Contextual Info: THUR UF10005 UF 1006 ULTRA FAST GLASS PASSIVATED RECTIFIERS AC 0.185 4.70 0.154(3.91) 0.415(10.54) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly suited for freewheeling diode power factor correction applications Excellent high temperature switching

Contextual Info: UF10005 THRU UF 1006 ULTRA FAST GLASS PASSIVATED RECTIFIERS AC 0.185 4.70 0.154(3.91) 0.415(10.54) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Idedlly suited for freewheeling diode power factor correction applications Excellent high temperature switching

Contextual Info: 1N5446A asi TUNING VARACTOR DESCRIPTION: The 1N5446A is a Silicon Abrupt Junction Tuning Varactor Diode. PACKAGE STYLE D0-204AA -nrB MAXIMUM RATINGS - 30 V Vr I' UF 100 m A If t P diss 400 mW @ TA = 25 °C Tj -65 °C t o +175 °C T stg -65 °C to +200 °C

z diode

Contextual Info: Vorläufige Oaten Heizspannung Heizstrom T E L B P U N K B N EAlll Diode für Kippgeräte 6j2 Uf 1^ Volt Amp 1,4 Oxydkathode strahlungsgeheizt♦ Grenzwerte: Diodenspannung Mittlerer Dioden- Id gleichstrom 250 80 Spitzenstrom 1^ Spitze 250 Spannung zwischen

YA1000

Abstract: ya 1000 TELEFUNKEN diode UF 400 UD DIODE telefunken ra 200
Contextual Info: G W -H eizu n g d ire k t g eh eizt D C -A C -H eatin g d ire ctly h e a te d TELEFUNKEN Y A 1000 Diode Vorläufige technische Daten * Tentative data Meßwerte • Measuring values 4 V 300 V Uf Ud If 325 mA Id 400 |xA Betriebswerte • Typical operation a

SL-1263

Abstract: SL-1274 SL-2283 SL-1283 SL-2264 SL-1264 SL2264 1249L SL-2272 SL-1222
Contextual Info: 7b DE17117D7!= 0002343 h • J&'-j-r \ Uf-CS LED Light Emitting Diode 2 Digits LED Numeric Displays m m « Absolute Maximum Ratings 6 tt Color m m IF/seg IFP/seg VR/seg Type No. Drawing No. Red Gre­ mA V Com.-Anode Com.-Cathode mA en L-10 o 20 40 3 SL-1272

1NS14

Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
Contextual Info: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S

LM431AIM3

Abstract: Si4800 Forward Transformer Design design of line frequency inductor and transformer EPCOS 3650 B540C BAV19WS DI-37 PC357N1T SL44
Contextual Info: DI-37 Design Idea DPA-Switch 16.5 W DC-DC Converter Application Device Power Output Input Voltage Output Voltage Topology Telecom DPA424RN 16.5 W 36 – 75 VAC 3.3 V Forward Sync. Rec. Design Highlights • Low cost • 400 kHz synchronous rectification design

DIODE 4d

Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
Contextual Info: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser

1842m

Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
Contextual Info: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser

3n40k

Abstract: STD3N40K3
Contextual Info: STD3N40K3 N-channel 400 V, 2.7 Ω typ., 2 A SuperMESH3 Zener-protected Power MOSFET in a DPAK package Datasheet — production data Features Order code VDSS RDS on max ID Pw STD3N40K3 400 V < 3.4 Ω 2A 30 W TAB • 100% avalanche tested ■ Extremely high dv/dt capability

STN3N40K3

Abstract: 3n40k stn3n40k 29-Jun-2010 P008
Contextual Info: STN3N40K3 N-channel 400 V, 3 Ω, 1.8 A SOT-223 SuperMESH3 Power MOSFET Features Order code VDSS RDS on max ID PW STN3N40K3 400 V < 3.4 Ω 1.8 A 3.3 W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance

STW25N95K3

Abstract: 25N95K3 ENERGY SAVING UNIT Diagram transistor st make 803 B2 marking code Zener
Contextual Info: STW25N95K3 N-channel 950 V, 0.32 Ω, 22 A, TO-247 SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS on max STW25N95K3 950 V < 0.36 Ω Pw ID 22 A 400 W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized

25N95K3

Abstract: STW25N95K3 Stw25n95
Contextual Info: STW25N95K3 N-channel 950 V, 0.32 Ω, 22 A, TO-247 SuperMESH3 Power MOSFET Features Type VDSS RDS on max STW25N95K3 950 V < 0.36 Ω Pw ID 22 A 400 W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrinsic capacitances

Contextual Info: STN3N40K3 N-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3 Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 Order code VDS RDS on max ID PTOT STN3N40K3 400V 3.4 Ω 1.8 A 3.3W • 100% avalanche tested 3 • Extremely high dv/dt capability

Contextual Info: Data Sheet True RMS AC + DC Tool Kit DMM Model 2712 T RUE RMS A ut o/ Manual Ranging Select between Auto or Manual ranging The 2712 is a full featured auto ranging true RMS DMM that combines performance, value and functionality. The 40000 count LCD has a green back

Contextual Info: STL3NK40 N-channel 400 V, 4.5 :, 2.3 A PowerFLAT 5x5 SuperMESH™ Power MOSFET Features Type VDSS RDS(on) max ID(1) Pw (1) STL3NK40 400 V < 5.5 : 2.3 A 75 W 1. The value is rated according to Rthj-f • Extremely high dv/dt capability ■ Improved ESD capability

Contextual Info: STD9N40M2 N-channel 400 V, 0.59 Ω typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code VDS @ TJmax RDS on max STD9N40M2 TAB 0.8 Ω 450 V ID 6A • Extremely low gate charge 1 3 • Lower RDS(on) x area vs previous generation