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    1842M Price and Stock

    ROHM Semiconductor BD81842MUV-ME2

    AUTOMOTIVE PANEL POWER MANAGEMEN
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    DigiKey BD81842MUV-ME2 Digi-Reel 2,380 1
    • 1 $5.84
    • 10 $3.84
    • 100 $2.7276
    • 1000 $2.205
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    BD81842MUV-ME2 Cut Tape 2,380 1
    • 1 $5.84
    • 10 $3.84
    • 100 $2.7276
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    BD81842MUV-ME2 Reel 2,500
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    Mouser Electronics BD81842MUV-ME2 3,270
    • 1 $4.59
    • 10 $3.21
    • 100 $2.53
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    Newark BD81842MUV-ME2 Cut Tape 1
    • 1 $3.45
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    Avnet Asia BD81842MUV-ME2 24 Weeks 2,500
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    Avnet Silica BD81842MUV-ME2 33 Weeks 2,500
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    CoreStaff Co Ltd BD81842MUV-ME2 2,300
    • 1 $3.44
    • 10 $1.864
    • 100 $1.332
    • 1000 $1.292
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    Harwin M80-5T11842MC

    CONN HEADER VERT 18POS 2MM
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    DigiKey M80-5T11842MC Tube 252
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    Mouser Electronics M80-5T11842MC
    • 1 $14.93
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    Newark M80-5T11842MC Bulk 36
    • 1 -
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    • 100 $13.59
    • 1000 $10.07
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    Harwin M80-5L11842MC

    CONN HEADER R/A 18POS 2MM
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    Mouser Electronics M80-5L11842MC
    • 1 $7.08
    • 10 $6.39
    • 100 $5.81
    • 1000 $4.71
    • 10000 $4.12
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    Harwin M80-5T11842ME

    CONN HDR 2MM PCB 18POS
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    DigiKey M80-5T11842ME Tube 252
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    Mouser Electronics M80-5T11842ME
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    Newark M80-5T11842ME Bulk 252
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    Avnet Abacus M80-5T11842ME 16 Weeks 252
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    Harwin M80-5L11842MD

    DATAMATE J-TEK DIL MALE HORIZONT
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    DigiKey M80-5L11842MD Tube 54
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    • 100 $9.2187
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    Avnet Abacus M80-5L11842MD 7 Weeks 54
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    1842M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    JCIQ-1880D

    Abstract: No abstract text available
    Text: I&Q Demodulator JCIQ-1880D Typical Performance Data FREQUENCY LO=1842MHz MHz RF I&Q 1842.30 1842.55 1842.79 1843.04 1843.29 1843.54 1843.78 1844.03 1844.20 1844.53 1844.77 1845.02 1845.27 1845.52 1845.76 1846.01 1846.26 1846.51 1846.75 1847.00 0.30 0.55


    Original     		JCIQ-1880D 1842MHz JCIQ-1880D PDF

    1090Mhz LNA

    Abstract: GSM LNA AN797 GSM ic REP027 gsm amplifier schematic APP797 MAX2338 measurement rf gsm
    Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lnas, low noice amplifiers, mixer, rf, rfic, cdma, gsm, wireless, rf ics, front end ic Sep 07, 2001 APPLICATION NOTE 797 MAX2338 LNAs and Downconverters Optimized for GSM Front-End REP027 Abstract: The MAX2338 front-end IC is tuned to support GSM and DCS operation at 942MHz and 1842MHz. A


    Original     		MAX2338 REP027) 942MHz 1842MHz. 270MHz com/an797 MAX2338: AN797, 1090Mhz LNA GSM LNA AN797 GSM ic REP027 gsm amplifier schematic APP797 measurement rf gsm PDF

    X3DC18E2S

    Abstract: No abstract text available
    Text: Model X3DC18E2S Rev B PRELIMINARY Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier


    Original     		X3DC18E2S X3DC18E2S RF-35, RO4350 20log PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is


    Original     		SPB-2026Z SPB-2026Z 10mil EDS-105436 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is


    Original     		SPB-2026Z SPB-2026Z 10mil EDS-105436 PDF

    hall marking code A04

    Abstract: INTELDX4 write-through YSS 928
    Text: INTEL486 PROCESSOR FAMILY • lntelDX4TM P ro c e s s o r — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant I/O Buffers


    OCR Scan     		INTEL486â 100-MHz 32-Bit 16K-Byte hall marking code A04 INTELDX4 write-through YSS 928 PDF

    SPB2026Z

    Abstract: SPB-2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026
    Text: Advanced Information SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is


    Original     		SPB-2026Z 10mil EDS-105436 SPB-2026Z SPB2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026 PDF

    FDS 4468

    Abstract: HBT 01 - 04G INTEL 486 sx sl pinout 240950 JVC 4580 fds 4418 TOT - 4301 INTEL DX4 241199 Intel DX4TM
    Text: intj, INTEL486 PROCESSOR FAMILY • Write-Back Enhanced lntelDX4™ Processor — Up to 100-MHz Operation — Speed-Multiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant


    OCR Scan     		INTEL486TM 100-MHz 32-Bit 16K-Byte 01b3324 FDS 4468 HBT 01 - 04G INTEL 486 sx sl pinout 240950 JVC 4580 fds 4418 TOT - 4301 INTEL DX4 241199 Intel DX4TM PDF

    BP65R1505S112

    Abstract: No abstract text available
    Text: DIELECTRIC FILTER SPECIFICATION China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: BP65R1505S112 www.sipatsaw.com 1. MODEL NUMBER MODEL NUMBER. CUSTOMER PART NO. BP65R1505S112 2. TEST CONDITION 2-1 TYPICAL CONDITION


    Original     		BP65R1505S112 BP65R1505S112 PDF

    MQE9

    Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


    Original     		HD155121F ADE-207-265A HD155121F 48-pin MQE9 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors PDF

    Untitled

    Abstract: No abstract text available
    Text: " DC-DC ECLB40W ECLB40W Series Features: • • • • • • • • • • • • • 40W isolated output Efficiency to 91% 2.05" x 1.2 x 0.4" six sided sheild metal case 4:1 input range Regulated outputs Fixed switching frequency Input under voltage protection


    Original     		ECLB40W ECLB40W 2004/108/EC UL60950-1, EN60950-1 IEC60950-1 ECLB40w-24S33 9-36VDC 10000mA PDF

    315 MHz Power Amplifier

    Abstract: No abstract text available
    Text: Model X3DC18E2S RevA Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as


    Original     		X3DC18E2S X3DC18E2S RF-35, RO4350 20log 315 MHz Power Amplifier PDF

    gi 9644 diode

    Abstract: INTELDX4 write-through
    Text: in te i, MILITARY Intel 486 PROCESSOR FAMILY • Write-Back Enhanced ln t e l D X 4 ™ Processor — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit


    OCR Scan     		100-MHz 32-Bit 16K-Byte Intel486â 168-oller gi 9644 diode INTELDX4 write-through PDF

    GSM400

    Abstract: RF8889A RFMD ASM RF8889 RFMD LTE Band 40
    Text: RF8889A RF8889A SP10T ANTENNA SWITCH MODULE SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm RF8889A GSM Rx1 GSM Rx2 Features           GSM Rx3 TRX1 Broadband Performance Suitable for all Cellular Modulation Schemes up to


    Original     		RF8889A SP10T RF8889A B13-2Fo, DS111017 GSM400 RFMD ASM RF8889 RFMD LTE Band 40 PDF

    Untitled

    Abstract: No abstract text available
    Text: Model X3DC18E2S Rev B Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as


    Original     		X3DC18E2S X3DC18E2S 20log PDF

    HD155121F

    Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


    Original     		HD155121F ADE-207-265A HD155121F 48-pin Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF8889A RF8889A SP10T ANTENNA SWITCH MODULE SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm RF8889A GSM Rx1 GSM Rx2 Features GSM Rx3 Broadband Performance Suitable for all Cellular Modulation Schemes up to 2.7GHz TRX1  Excellent Insertion Loss and


    Original     		RF8889A SP10T SP10T B13-2Fo, DS111017 PDF

    Untitled

    Abstract: No abstract text available
    Text: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems HITACHI ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF


    OCR Scan     		HD155121F ADE-207-265 HD155121F 48-pin cop12 cop22 PDF

    transistor j5

    Abstract: 45W AMP PH1819-45A Wireless power
    Text: Wireless Power Transistor 45 Watts 1805-1880 MHz PH1819-45A PH1819-45A Wireless Power Transistor 45 Watts, 1805 - 1880 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor rd -28 dBc Typical 3 IMD at 45 Watts PEP Common Emitter Class AB Operation


    Original     		PH1819-45A PH11819-45A PH1819-4 100KHz 1805MHz 1842MHz 1880MHz transistor j5 45W AMP PH1819-45A Wireless power PDF

    SPB-2026

    Abstract: zo 107 TL 188 TRANSISTOR PIN DIAGRAM SPB2026Z SPB-2026Z SPB2026 0722 ER39 SOF-26 ML200D
    Text: SPB-2026Z Product Description 0.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is


    Original     		SPB-2026Z SPB-2026Z SOF-26 EDS-105436 SPB-2026 zo 107 TL 188 TRANSISTOR PIN DIAGRAM SPB2026Z SPB2026 0722 ER39 ML200D PDF

    HBT 01 - 04G

    Abstract: HBT 00 - 04G INTEL DX4 86-1-S smi LT 9636 INTEL DX2 1184N gi 9214 80286 instruction set 22-31N
    Text: in te i MILITARY Intel486 PROCESSOR FAMILY • lntelDX4™ Processor — Up to 100-MHz Operation — Speed-Multiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant


    OCR Scan     		Intel486TM 100-MHz 32-Bit 16K-Byte 462bl75 HBT 01 - 04G HBT 00 - 04G INTEL DX4 86-1-S smi LT 9636 INTEL DX2 1184N gi 9214 80286 instruction set 22-31N PDF

    SPB-2026Z

    Abstract: SPB-2026ZSR ER39 spb2026z s-parameters
    Text: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated


    Original     		SPB2026Z SPB2026Z SOF-26 SPB2026ZSQ SPB2026ZSR SPB2026ZPCK1 SPB-2026Z SPB-2026ZSR ER39 s-parameters PDF

    LTC6946-3

    Abstract: LTC6946 1810MHz VCO 16 pin TB 112MA sdi 0818 LTC5541 QFN-28 LTC6946IUFD-1 CI LM 4800 Marking Code h06
    Text: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise


    Original     		LTC6946 37GHz 226dBc/Hz 274dBc/Hz 157dBc/Hz 600MHz LTC5590/LTC5591 LTC5592/LTC5593 LTC5569 LTC6946-3 LTC6946 1810MHz VCO 16 pin TB 112MA sdi 0818 LTC5541 QFN-28 LTC6946IUFD-1 CI LM 4800 Marking Code h06 PDF

    NGK Spark Plug

    Abstract: NTK 20 mHZ ntk filter 2808 transistor DCS1800 MFE1842BBU22 SPARK S21L
    Text: COMMUNICATION MEDIA COMPONENTS GROUP NGK SPARK PLUG CO.,LTD. 2808 IWASAKI, KOMAKI-SHI, AICHI, JAPAN 485-8510 Dielectric Filter with Attenuation Pole P / N : MFE1842BBU22 Application : DCS1800 Rx Features 1.High attenuation for using pole in stop band. 2.Extreme mechanical stability


    Original     		MFE1842BBU22 DCS1800 S11logMAG S21logMAG 1842MHz 400MHz NGK Spark Plug NTK 20 mHZ ntk filter 2808 transistor MFE1842BBU22 SPARK S21L PDF