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    DIODE TSF2 Search Results

    DIODE TSF2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UC1611J
    		Texas Instruments Quad Schottky Diode Array 8-CDIP -55 to 125 Visit Texas Instruments
    5962-90538012A
    		Texas Instruments Quad Schottky Diode Array 20-LCCC -55 to 125 Visit Texas Instruments Buy
    TPD4E05U06DQAR
    		Texas Instruments 4-Channel Ultra-Low-Capacitance IEC ESD Protection Diode 10-USON -40 to 125 Visit Texas Instruments Buy
    5962-9053801PA
    		Texas Instruments Quad Schottky Diode Array 8-CDIP -55 to 125 Visit Texas Instruments Buy
    UC3610DW
    		Texas Instruments Dual Schottky Diode Bridge 16-SOIC 0 to 70 Visit Texas Instruments Buy

    DIODE TSF2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ASEA motor

    Contextual Info: MOTOROLA O rder this docum ent by M TSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs


    OCR Scan     		TSF2P02HD/D ASEA motor PDF

    Contextual Info: TSF20U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311001 PDF

    Contextual Info: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309048 PDF

    Contextual Info: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF2080C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309047 PDF

    Contextual Info: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309049 PDF

    Contextual Info: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307012 PDF

    Contextual Info: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307013 PDF

    Contextual Info: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor FEATURES Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20U45C TSF20U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1312014 PDF

    Contextual Info: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1310028 PDF

    Contextual Info: TSF2080C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF2080C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307011 PDF

    Contextual Info: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20U45C TSF20U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401024 PDF

    TSF20U100C

    Contextual Info: TSF20U100C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20U100C 2011/65/EU 2002/96/EC ITO-220AB D1403005 TSF20U100C PDF

    Contextual Info: TSF20U100C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


    Original     		TSF20U100C 2011/65/EU 2002/96/EC ITO-220AB D1408026 PDF

    Contextual Info: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20H100C TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401006 PDF

    Contextual Info: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF2080C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401018 PDF

    Contextual Info: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20U45C TSF20U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401024 PDF

    Contextual Info: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20U45C TSF20U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408028 PDF

    Contextual Info: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20U45C TSF20U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401024 PDF

    TSF2060C

    Abstract: ITO-220AB
    Contextual Info: Preliminary TSF2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260℃


    Original     		ITO-220AB TSF2060C J-STD-020D, 22-B106 ITO-220AB 2002/95/EC 2002/96/EC TSF10100C TSF2060C PDF

    Contextual Info: Preliminary TSF20100C creat by ART Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Patented Trench MOS Barrier Schottky technology ² Excellent high temperature stability ² Low forward voltage ² Lower power loss/ High efficiency


    Original     		TSF20100C ITO-220AB J-STD-020D, JESD22-B102D ITO-220AB J-STD-002 22-B102 TSF20100C PDF

    Contextual Info: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


    Original     		TSF20H100C TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401006 PDF

    Contextual Info: TSF20H100C thru TSF20H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and


    Original     		TSF20H100C TSF20H200C 2011/65/EU 2002/96/EC ITO-220AB D1404001 PDF

    Contextual Info: MOTOROLA Order this document by MTSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Motorola Preferred Device Micro8™ devices are an advanced series of power MOSFETs


    OCR Scan     		MTSF2P02HD/D 2PHX43416-0 PDF

    Contextual Info: MOTOROLA Order this document by MTSF2P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs


    OCR Scan     		MTSF2P03HD/D PDF