Untitled
Abstract: No abstract text available
Text: TSF20U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability
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Original
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TSF20U60C
2011/65/EU
2002/96/EC
ITO-220AB
22-B102
D1311001
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PDF
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Untitled
Abstract: No abstract text available
Text: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency
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Original
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TSF20H120C
2011/65/EU
2002/96/EC
ITO-220AB
22-B102
D1309048
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PDF
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Untitled
Abstract: No abstract text available
Text: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability
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Original
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TSF2080C
2011/65/EU
2002/96/EC
ITO-220AB
22-B102
D1309047
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PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency
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Original
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TSF20H150C
2011/65/EU
2002/96/EC
ITO-220AB
22-B102
D1309049
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PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency
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Original
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TSF20H120C
2011/65/EU
2002/96/EC
ITO-220AB
22-B102
D1307012
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency
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Original
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TSF20H150C
2011/65/EU
2002/96/EC
ITO-220AB
22-B102
D1307013
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor FEATURES Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability
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Original
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TSF20U45C
TSF20U60C
2011/65/EU
2002/96/EC
ITO-220AB
22-B102
D1312014
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency
|
Original
|
TSF20H150C
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1310028
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF2080C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability
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Original
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TSF2080C
2011/65/EU
2002/96/EC
ITO-220AB
22-B102
D1307011
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability
|
Original
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TSF20U45C
TSF20U60C
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1401024
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PDF
|
TSF20U100C
Abstract: No abstract text available
Text: TSF20U100C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability
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Original
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TSF20U100C
2011/65/EU
2002/96/EC
ITO-220AB
D1403005
TSF20U100C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20U100C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and
|
Original
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TSF20U100C
2011/65/EU
2002/96/EC
ITO-220AB
D1408026
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability
|
Original
|
TSF20H100C
TSF20H150C
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1401006
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability
|
Original
|
TSF2080C
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1408021
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability
|
Original
|
TSF20U45C
TSF20U60C
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1401024
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability
|
Original
|
TSF20U45C
TSF20U60C
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1408028
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20U45C thru TSF20U60C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability
|
Original
|
TSF20U45C
TSF20U60C
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1401024
|
PDF
|
TSF2060C
Abstract: ITO-220AB
Text: Preliminary TSF2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260℃
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Original
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ITO-220AB
TSF2060C
J-STD-020D,
22-B106
ITO-220AB
2002/95/EC
2002/96/EC
TSF10100C
TSF2060C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary TSF20100C creat by ART Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Patented Trench MOS Barrier Schottky technology ² Excellent high temperature stability ² Low forward voltage ² Lower power loss/ High efficiency
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Original
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TSF20100C
ITO-220AB
J-STD-020D,
JESD22-B102D
ITO-220AB
J-STD-002
22-B102
TSF20100C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and
|
Original
|
TSF20H100C
TSF20H150C
2011/65/EU
2002/96/EC
ITO-220AB
JESD22-B102
D1401006
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSF20H100C thru TSF20H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and
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Original
|
TSF20H100C
TSF20H200C
2011/65/EU
2002/96/EC
ITO-220AB
D1404001
|
PDF
|
ASEA motor
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs
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OCR Scan
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TSF2P02HD/D
ASEA motor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Motorola Preferred Device Micro8™ devices are an advanced series of power MOSFETs
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OCR Scan
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MTSF2P02HD/D
2PHX43416-0
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTSF2P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs
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OCR Scan
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MTSF2P03HD/D
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PDF
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