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Contextual Info: Preliminary TSF10100C creat by ART Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Patented Trench MOS Barrier Schottky technology ² Excellent high temperature stability ² Low forward voltage ² Lower power loss/ High efficiency	Original	TSF10100C ITO-220AB J-STD-020D, JESD22-B102D J-STD-002 22-B102 TSF10100C	PDF
Contextual Info: Preliminary TSF10U60C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package	Original	ITO-220AB TSF10U60C JESD22-B102D ITO-220AB 2002/95/EC 2002/96/EC TSF10100C	PDF
TSF2060C Abstract: ITO-220AB Contextual Info: Preliminary TSF2060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260℃	Original	ITO-220AB TSF2060C J-STD-020D, 22-B106 ITO-220AB 2002/95/EC 2002/96/EC TSF10100C TSF2060C	PDF
EC 1030 Contextual Info: Preliminary TSF1060C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package	Original	ITO-220AB TSF1060C JESD22-B102D ITO-220AB 2002/95/EC 2002/96/EC TSF10100C EC 1030	PDF
Contextual Info: Preliminary TSF10U45C Dual High-Voltage Trench MOS Barrier Schottky Rectifier ITO-220AB Features ² Trench MOS Schottky technology ² Low forward voltage drop, low power losses ² High efficiency operation ² Solder bath temperature 245±5℃, per JESD22-B102D for ITO-220AB package	Original	ITO-220AB TSF10U45C JESD22-B102D ITO-220AB 2002/95/EC 2002/96/EC TSF10100C	PDF