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    Taiwan Semiconductor TSF2080C-C0G

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    TSF2080C Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF2080C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309047 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF2080C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401018 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF2080C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF2080C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307011 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF2080C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408021 PDF