DIODE SMD JS 8 Search Results

smd diode a7

Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
Contextual Info: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output

smd diode marking U1

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10PC3 Unit-mm Weight 0.326g Typ 30 V 10A Feature • SMD • SMD • î 2 ® V f =0.4 V • U ltra -L o w V f=0.4V • iJ 'S = À l; jS î § M • High lo R a tin g -S m a ll-P K G Main Use

smd diode SM 97

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30PC3M PyhfLig- ffl U nit-m m W eight 1.5g(Typ) 10.2 30V 30A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M

smd diode marking sm 34

Contextual Info: Schottky Barrier Diode mtmm Single Diode o u t l in e M2FH3 30V 6A Feature 1Small SMD ' Super-Low V f = 0 .3 6 V • /JvS Ü S M D • tliafîV F = 0.36V Main Use • i K y z r U —jS JS K it • DC/DC n y j { - 5 > • Reverse connect protection for DC power source

smd JSs

Abstract: smd JSs diode
Contextual Info: SK50GB065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GB065 *'-) RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ RU V B- I WS L$ UW V C$XYI J : C$0%&

Contextual Info: Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits. DESCRIPTION

diode s4

Abstract: smd diode S4 S4 DIODE smd diode j smd diode JS DIODE S4 65 DIODE S4 92 S4 SMD DIODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits.

DIODE S4 08

Abstract: smd diode 891 BA891 DIODE S4 65 smd diode S4 S4 DIODE ultra low forward voltage diode diode s4 smd diode nh smd diode JS
Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners

Contextual Info: Band-switching diode BA 891 FEATURES • Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount band-switching circuits.

IXGH24N60BU1

Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Contextual Info: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600

transistor smd AsG

Abstract: BSS88 M7 SMD DIODE MARKING
Contextual Info: BSS88 In fin e o n technologias SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^GS m = 0-8.2.0V Type Vbs BSS88 240 V Type BSS88 BSS88 BSS88 Ordering Code Q62702-S287 Q62702-S303 Q62702-S576 0.25 A B DS(on) Package

Diode SOT-23 marking Js

Abstract: DIODE JS4 Js SMD MARKING CODE SOT23 smd diode JS
Contextual Info: BAS21 / A / C / S 225mW SMD Switching Diode Small Signal Diode SOT-23 A Features F B E ­Fast switching speed ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate ­Pb free version and RoHS compliant

smd JS

Abstract: smd diode marking ja diode js smd transistor js 650 DIODE k 650 smd diode JS smd diode nh BAT62 ja smd
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT62 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Param eter Sym bol Value Unit VR 40 V Reverse voltage Forward current Total power dissipation, T S 85 Junction tem perature

book FOR D 1047

Contextual Info: SPP 80N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f î D S o n • Avalanche rated Continuous drain current b 30 V 0 .0 0 6 Q 80 A • Logic Level • dv/df rated

Contextual Info: High-speed diode BAS516 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 85 V · Repetitive peak forward current: max. 500 mA. APPLICATIONS · High-speed switching in e.g. surface mounted

fr diode

Abstract: IR s29 S293 BAS516 SC79
Contextual Info: LESHAN RADIO COMPANY, LTD. High-speed diode BAS516 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 85 V · Repetitive peak forward current: max. 500 mA.

Js SMD MARKING CODE SOT23

Abstract: SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm
Contextual Info: SMD Switching Diodes TYPE NO. CA SE DESCRIPTION BAS28 BAS56 C L L 914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CM PD914 C M P D IO O I C M P D IO O I A SO T -143 SO T -143 S O D -8 O SO D -8O S O D -8O S O D -8 O S O D -8 O SOT-23 SOT-23 SOT-23 C M P D IO O IS CM P02003

BST50

Contextual Info: SMD Type Product specification KST50; KST51; KST52 BST50; BST51; BST52 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 High current (max. 0.5 A) Integrated diode and resistor. +0.1 0.53-0.1 +0.1 0.44-0.1 0.40 +0.1 -0.1 2.60 +0.1 -0.1 +0.1 0.48-0.1 +0.1

BST50

Abstract: BST52 BST51 kst51 KST52 smd npn darlington
Contextual Info: Transistors SMD Type NPN Darlington Transistors KST50; KST51; KST52 BST50; BST51; BST52 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 High current (max. 0.5 A) Integrated diode and resistor. +0.1 0.53-0.1 +0.1 0.44-0.1 0.40 +0.1 -0.1 2.60 +0.1 -0.1

DIODE JS.9 smd

Contextual Info: SIEMENS SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

Contextual Info: BS 170 I nf ineon la c h n o I og i • s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 VPT05548 • ^GS th = 0-8-2.0V Pin 3 Pin 2 Pin 1 G S Type ^OS b flDS(on) Package Marking BS 170 60 V 0.3 A 5Ü TO-92 BS 170 Type

smd diode schottky code marking 2U

Abstract: smd diode marking codes 2U marking BTJ marking code IR10 diode SMD marking CODE 2U DIODE smd marking v1 SMD MARKING CODE 0B 2u schottky Barrier Diodes marking 2U diode J532
Contextual Info: Schottky Barrier Diode Single Diode DG1J2A Unit-mm Package : G1F Weight 0.011 g Typ 2 0 V 1 .5A Feature Ultra-small SMD Ultla-thin PKG=0.8mm Low Ir=10/UA Resistance for thermal run-away • itl'J v S J S M D • iS j S = 0 .8 m m • f i l R = 10/UA Main Use

smd code book transistor

Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO
Contextual Info: BSP 92 Infineon t « c h n o l o g i •* SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Pin 1 Type ^bs b BSP 92 -240 V -0.2 A Type BSP 92 Ordering Code Q62702-S653 Pin 2 °D S (on) Package

Drive circuit for IGBT using IR2130

Abstract: Schematic Drive circuit for IGBT using IR2130 SMD LD3 smd diode h15 AN-985 two IR2130 12 output single phase IR2130 MP816 ac motor speed control circuit ir2130 h1n1
Contextual Info: International ion R e c tifie r D e sig n T ips DT 93-6B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 MINIATURIZATION OF THE POWER ELECTRONICS FOR MOTOR DRIVES By G erry Limjuco & Dana Wilhelm