shockley diode
Abstract: shockley diode application shockley diode datasheet diode shockley n-channel enhancement mode vmos power fet shockley shockley diode applications megamos megamos 13 SIEMENS WASHING machine
Text: MicroNote Series 901 by Dan Tulbure, Microsemi Santa Ana Introduction to Power MOSFETs What is a Power MOSFET? We all know how to use a diode to implement a switch. But we can only switch with it, not gradually control the signal flow. Furthermore, a diode acts
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O-250
shockley diode
shockley diode application
shockley diode datasheet
diode shockley
n-channel enhancement mode vmos power fet
shockley
shockley diode applications
megamos
megamos 13
SIEMENS WASHING machine
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Untitled
Abstract: No abstract text available
Text: 1N3837 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)46 V(BO) Max. (V)54 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)30 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3837
Current15m
StyleDO-204AA
NumberTY00200003
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shockley diode
Abstract: No abstract text available
Text: 470 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)560 V(BO) Max. (V)840 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)420 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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Current500u
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shockley diode
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Abstract: No abstract text available
Text: 450 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)400 V(BO) Max. (V)600 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)300 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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Current500u
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Abstract: No abstract text available
Text: 1N3846 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) V(R) Max. (V)60 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3846
Current50m
StyleDO-204AA
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: 1N3840 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3840
Current50m
StyleDO-204AA
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: 1N3936 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current11m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m
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1N3936
Current11m
StyleDO-204AA
NumberTY00200003
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shockley diode
Abstract: No abstract text available
Text: UF100A Thyristors Four-Layer Shockley Diode V(BO) Min. (V)80 V(BO) Max. (V)120 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)120 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m
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UF100A
Current50m
StyleTO-204AAvar
NumberTY00200003
shockley diode
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Abstract: No abstract text available
Text: 460 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)480 V(BO) Max. (V)720 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)360 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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Current500u
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Abstract: No abstract text available
Text: 1N3845 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)46 V(BO) Max. (V)54 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)30 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3845
Current50m
StyleDO-204AA
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: 430 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)240 V(BO) Max. (V)360 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)180 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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shockley diode
Abstract: No abstract text available
Text: 1N3838 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) V(R) Max. (V)60 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3838
Current15m
StyleDO-204AA
NumberTY00200003
shockley diode
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Untitled
Abstract: No abstract text available
Text: 410 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)80 V(BO) Max. (V)120 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)60 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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Current500u
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shockley diode
Abstract: No abstract text available
Text: 1N3832 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3832
Current15m
StyleDO-204AA
NumberTY00200003
shockley diode
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Abstract: No abstract text available
Text: 1N3844 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)41 V(BO) Max. (V)49 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)27 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3844
Current50m
StyleDO-204AA
NumberTY00200003
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shockley diode
Abstract: No abstract text available
Text: 420 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)160 V(BO) Max. (V)240 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)120 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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Current500u
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shockley diode
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shockley diode
Abstract: No abstract text available
Text: 1N3490 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)12 I(H) Max. (A) Holding Current45m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m
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1N3490
Current45m
StyleDO-204AA
NumberTY00200003
shockley diode
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Untitled
Abstract: No abstract text available
Text: 1N3836 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)41 V(BO) Max. (V)49 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)27 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3836
Current15m
StyleDO-204AA
NumberTY00200003
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shockley diode
Abstract: No abstract text available
Text: 480 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)640 V(BO) Max. (V)960 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)480 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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Current500u
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shockley diode
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Untitled
Abstract: No abstract text available
Text: UF100C Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)110 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m
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UF100C
Current50m
StyleTO-204AAvar
NumberTY00200003
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Abstract: No abstract text available
Text: UF100B Thyristors Four-Layer Shockley Diode V(BO) Min. (V)85 V(BO) Max. (V)115 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)115 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m
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UF100B
Current50m
StyleTO-204AAvar
NumberTY00200003
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T40R06220400
Abstract: No abstract text available
Text: T40R06220400 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)650 V(BO) Max. (V)0.8k I(S) Max. (A)5.0m I(TRM) Max. (A)35² @ t(w) (s) (Test Condition) I(TSM) Max. (A)300¥ V(R) Max. (V)600 I(H) Max. (A) Holding Current100m V(TM) Max. (V)40 @I(T) (A) (Test Condition)1.0k
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T40R06220400
Current100m
NumberTY00200003
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shockley diode application
Abstract: shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite
Text: CATALOG OF SHOCKLEY 4-LAYER DIODES L L E V IT E SHOCKLEY 10O1 RAGE M IL L TRANSISTOR ROAD • PA LO A L T O . C A L IF . General Information and Introduction to the Shockley 4 -L a y e r Diode The Shockley 4-layer diode is a two terminal, silicon semiconductor switch. It has
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8000/nominal
shockley diode application
shockley diode
shockley diode applications
1N3835
2sc 945 p transistor
diode shockley
1N3837
shockley diode high voltage and high current
shockley
clevite
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shockley diode
Abstract: diode shockley shockley 1n3842 shockley diode 1N3842 IN3831
Text: MICROWAVE DIODE CORPORATION , , «3831 IN3846 • h -, SILICON PLANAR THYRISTOR DIODES lOOO Also known as Four Layer Diodes and Shockley Diodes Switching Voltage 20 to 100 volts Holding current .5 to 45 mA. u PACKAGE OUTLINE ELECTRI CAL PA RA M ETERS Type Switching Voltage Vg V Holding Cutrent IH (mA)
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IN3831
IN3846
IN3832
IK3833
IN3834
IK3835
IN3836
IN3837
IN3838
shockley diode
diode shockley
shockley
1n3842
shockley diode 1N3842
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