philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAS21/A/C/SLT1 SOT—23 SWITCHING DIODE FEATURES BAS21LT1 Marking: JS BAS21ALT1 Marking: JS2 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage
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OT-23
BAS21/A/C/SLT1
BAS21LT1
BAS21ALT1
BAS21CLT1
037TPY
950TPY
550REF
022REF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes CMPSH-3/3A/3C/3S SOT—23 SCHOTTKY DIODE FEATURES CMPSH-3 Marking: D95 CMPSH-3A Marking: DB1 Reverse breakdown voltage Reverse voltage Forward Diode leakage current voltage
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OT-23
037TPY
950TPY
550REF
022REF
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BAS16W
Abstract: MMBD4148W
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE MMBD4148W/BAS16W SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking: A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-323
MMBD4148W/BAS16W
OT-323
150mA
MMBD4148W
/BAS16W
BAS16W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40 SERIES SOT—23 SCHOTTKY DIODE FEATURES BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage
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OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
037TPY
950TPY
550REF
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LBAL99WT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LBAL99WT1G Switching Diode • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING ORDERING INFORMATION . Device Marking LBAL99WT1G JF 3000 Tape & Reel JF 10000 Tape & Reel LBAL99WT1G SC-70
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LBAL99WT1G
SC-70
LBAL99WT1G
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage
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OCR Scan
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Q62702-A3466
OT-343
EHN00019
100ns,
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BAW56 application note
Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Text: BAW56 Silicon Switching Diode Array 3 For high-speed switching applications Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR
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BAW56
VPS05161
EHA07006
EHB00091
EHB00092
Jul-31-2001
EHB00093
BAW56 application note
A1s sot23
BAW56
V6010
ta1504
A2 SOT23
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BAV70
Abstract: No abstract text available
Text: BAV70 Silicon Switching Diode Array 3 For high-speed switching applications Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV70
VPS05161
EHA07004
EHB00066
EHB00067
Jul-31-2001
EHB00068
BAV70
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BAV99
Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Text: BAV99 Silicon Switching Diode Array 3 For high-speed switching applications Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAV99
VPS05161
EHA07005
EHB00076
EHB00077
Jul-30-2001
EHB00078
BAV99
free pdf transistor a7s
bav99 marking
diode bav
A2 SOT23
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DIODE S4 Schottky SOD-323
Abstract: DIODE marking S4 sod diode SOD-323 S4 DIODE schottky SD103CWS SD103AWS SD103BWS diode s6 28 diode x sod 323
Text: SOD-323 Plastic-Encapsulate Diode SD103AWS-SD103CWS SCHOTTKY DIODE SOD-323 Features • · 1.00 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance 1.70 1.30 Marking: SD103AWS:S4
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OD-323
SD103AWS-SD103CWS
OD-323
SD103AWS
SD103BWS
SD103CWS
SD103AWS
SD103BWS
SD103CWS
DIODE S4 Schottky SOD-323
DIODE marking S4 sod
diode SOD-323
S4 DIODE schottky
diode s6 28
diode x sod 323
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BAT62
Abstract: VPS05178
Text: BAT62 Silicon Schottky Diode 3 Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62 62s Pin Configuration 1 = A1 2 = C2 3 = A2
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BAT62
VPS05178
EHA07020
OT143
Aug-23-2001
EHD07061
EHD07062
900MHz
BAT62
VPS05178
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode BAT42WS/BAT43WS SCHOTTKY DIODE SOD-323 Low Forward Voltage Drop Fast Switching Time Surface Mount Package Ideally Suited for Automatic Insertion 1.70 Marking: BAT42WS:S7 BAT43WS:S8
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
BAT43WS
300ms,
019REF
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S3 DIODE schottky
Abstract: S3 marking DIODE SD101AWS SD101BWS SD101CWS
Text: SOD-323 Plastic-Encapsulate Diode SD101AWS-SD101CWS SCHOTTKY DIODE SOD-323 Features • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time 1.00 · · Marking: SD101AWS:S1 SD101BWS:S2 SD101CWS:S3 Maximum Ratings
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OD-323
SD101AWS-SD101CWS
OD-323
SD101AWS
SD101BWS
SD101CWS
BAV16WS/1N4148WS
019REF
475REF
S3 DIODE schottky
S3 marking DIODE
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A1 SOT143
Abstract: VPS05178 BAW101 EHA07008
Text: BAW101 Silicon Switching Diode Array 3 Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
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BAW101
VPS05178
EHA07008
OT143
EHN00019
Aug-20-2001
EHB00104
EHB00103
A1 SOT143
VPS05178
BAW101
EHA07008
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s3s sot23
Abstract: BBY51
Text: BBY51 Silicon Tuning Diode 3 High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment 2 1 Type Marking BBY51 S3s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT23 Maximum Ratings
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BBY51
VPS05161
Aug-08-2001
EHD07128
s3s sot23
BBY51
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BBY 52
Abstract: No abstract text available
Text: BBY 52 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 2 1 Type Marking BBY 52 S5s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23
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VPS05161
OT-23
Oct-05-1999
BBY 52
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450KW
Abstract: No abstract text available
Text: BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values
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Q62702-A1004
OT-143
450KW
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BBY53
Abstract: No abstract text available
Text: BBY53 3 Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation 2 for VCOs in mobile communications equipment High ratio at low reverse voltage Type BBY53 Marking S7s 1 Pin Configuration 1 = A1 2 = A2 3 = C1/2
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BBY53
VPS05161
Jul-04-2001
BBY53
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BBY53-05W
Abstract: VSO05561
Text: BBY53-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY53-05W
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BBY53-05W
VSO05561
EHA07179
OT323
Jul-02-2001
BBY53-05W
VSO05561
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BAT62-07W
Abstract: VPS05605
Text: BAT62-07W Silicon Schottky Diode 3 Low barrier diode for detectors up to GHz 4 frequencies 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62-07W 62s Pin Configuration 1=C1 2=C2 3=A2
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BAT62-07W
VPS05605
EHA07008
OT343
Jul-06-2001
BAT62-07W
VPS05605
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6A1 diode
Abstract: marking code 76s 7006S 6A1 MARKING
Text: SIEMENS BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching • Circuit protection 6 • Voltage clamping • High-level detecting and mixing 3 • Available with CECC quality assessment A1/A2 2 C2 1 . R FI Type Marking
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OCR Scan
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70-06S
VPS05604
Q62702-A3469
OT-363
100ns)
6A1 diode
marking code 76s
7006S
6A1 MARKING
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PDF
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VPS05178
Abstract: No abstract text available
Text: BBY 51-07 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation 4 • For VCO's in mobile communications equipment 2 1 Type Marking BBY 51-07 HHs Pin Configuration 1 = C1 2 = C2 3 = A2 VPS05178 Package
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VPS05178
OT-143
Oct-05-1999
EHD07128
EHD07129
VPS05178
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Untitled
Abstract: No abstract text available
Text: BBY 51 Silicon Tuning Diode 3 • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 2 1 Type Marking BBY 51 S3 Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT-23
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VPS05161
OT-23
Oct-05-1999
EHD07128
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