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    BAW101 Price and Stock

    Rochester Electronics LLC BAW101E6433HTMA1

    DIODE ARR GP 300V 250MA SOT1433D
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    DigiKey BAW101E6433HTMA1 Bulk 20,000 3,418
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    Diodes Incorporated BAW101V-7

    DIODE ARRAY GP 325V 250MA SOT563
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    Avnet Silica BAW101V-7 3,000
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    Win Source Electronics BAW101V-7 15,000
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    Infineon Technologies AG BAW101E6327HTSA1

    DIODE ARR GP 300V 250MA SOT1433D
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    DigiKey BAW101E6327HTSA1 Cut Tape 1
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    BAW101E6327HTSA1 Digi-Reel 1
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    BAW101E6327HTSA1 Reel 9,000
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    Mouser Electronics BAW101E6327HTSA1 5,159
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    Verical BAW101E6327HTSA1 138,000 4,185
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    BAW101E6327HTSA1 7,675 4,185
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    BAW101E6327HTSA1 5,651 128
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    Arrow Electronics BAW101E6327HTSA1 6,000 4 Weeks 3,000
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    BAW101E6327HTSA1 6,000 4 Weeks 3,000
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    BAW101E6327HTSA1 5,651 1
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    Rochester Electronics BAW101E6327HTSA1 265,675 1
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    TME BAW101E6327HTSA1 1,845 5
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    Nexperia BAW101215

    Diode Switching 600V 0.25A 4-Pin(3+Tab) SOT-143B T/R - Tape and Reel (Alt: BAW101,215)
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    Avnet Americas BAW101215 Reel 21,000 8 Weeks 21,000
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    Avnet Asia BAW101215 9,000 8 Weeks 3,000
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    Diodes Incorporated BAW101Q-7

    HIVOLT SWITCHING DIODE BVR > 100V SOT143 T&R 3K - Tape and Reel (Alt: BAW101Q-7)
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    Avnet Americas BAW101Q-7 Reel 8 Weeks 3,000
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    Mouser Electronics BAW101Q-7 2,999
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    Arrow Electronics BAW101Q-7 60,000 12 Weeks 6,000
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    Newark BAW101Q-7 Cut Tape 1,430 5
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    Avnet Silica BAW101Q-7 3,000 10 Weeks 3,000
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    Find more BAW101 price and stock on Findchips.com

    BAW101 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAW101 Central Semiconductor DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES Original PDF
    BAW101 Diodes Incorporated DUAL SURFACE MOUNT SWITCHING DIODE Original PDF
    BAW101 Infineon Technologies Silicon Switching Diode Original PDF
    BAW101 Infineon Technologies Silicon Switching Diode Array with medium-speed diodes Original PDF
    BAW101 Infineon Technologies High Speed Switching Diodes; Package: PG-SOT143-4; Configuration: Dual; VR (max): 300.0 V; IF (max): 250.0 mA; IR (max): 150.0 nA; trr (max): 1,000.0 ns; Original PDF
    BAW101 Kexin Silicon Switching Diode Array Original PDF
    BAW101 NXP Semiconductors BAW101 - High voltage double diode - Cd max.: 2 pF; Configuration: dual isolated ; IF max: 250 mA; IFSM max: 4.5 A; IR max: 150@VR=250V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1.1@IF=100mA mV; VR max: 300 V Original PDF
    BAW101 Philips Semiconductors BAW101, High voltage double diode Original PDF
    BAW101 Siemens Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) Original PDF
    BAW101 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BAW101 Siemens Cross Reference Guide 1998 Original PDF
    BAW101 TY Semiconductor Silicon Switching Diode Array - SOT-143 Original PDF
    BAW101 Central Semiconductor DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES Scan PDF
    BAW101 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAW101 Siemens Components for Surface Mounting 1983/4 Scan PDF
    BAW101,215 NXP Semiconductors High voltage double diode - Cd max.: 2 pF; Configuration: dual isolated ; IF max: 250 mA; IFSM max: 4.5 A; IR max: 150@VR=250V nA; IFRM: 625 mA; trr max: 50 ns; VFmax: 1.1@IF=100mA mV; VR max: 300 V; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
    BAW101-7 Diodes Incorporated Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 300V 250MA SOT143 Original PDF
    BAW101E6327 Infineon Technologies DIODE SWITCHING 300V 0.25A PG-SOT143-4-1 T/R Original PDF
    BAW101E6327 Infineon Technologies Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 300V 250MA SOT143 Original PDF
    BAW101E6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 300V 250MA SOT143 Original PDF

    BAW101 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A1 SOT143

    Abstract: VPS05178 BAW101 EHA07008
    Text: BAW101 Silicon Switching Diode Array 3  Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		BAW101 VPS05178 EHA07008 OT143 EHN00019 Aug-20-2001 EHB00104 EHB00103 A1 SOT143 VPS05178 BAW101 EHA07008 PDF

    OA 91 diode

    Abstract: high voltage diode high voltage diodes BAW101
    Text: Central Semiconductor Corp. DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES DESCRIPTION The CENTRAL S E M IC O N D U C TO R BAW101 type is a Silicon Dual Isolated High Voltage Switching diode designed for surface mount switching applications requiring high voltage


    OCR Scan     		BAW101 OT-143 BAW101 100mA OA 91 diode high voltage diode high voltage diodes PDF

    Untitled

    Abstract: No abstract text available
    Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value


    Original     		BAW101. BAW101 OT143 PDF

    AB marking code smd diode

    Abstract: high voltage diode high voltage diodes marking CODE R SMD DIODE smd diode marking code BAW101
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BAW101 High voltage double diode Product specification 2003 May 13 Philips Semiconductors Product specification High voltage double diode BAW101 FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 50 ns


    Original     		M3D071 BAW101 BAW101 SCA75 613514/01/pp12 AB marking code smd diode high voltage diode high voltage diodes marking CODE R SMD DIODE smd diode marking code PDF

    BAW101S

    Abstract: No abstract text available
    Text: BAW101S NEW PRODUCT HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed: max. 50ns High Reverse Breakdown Voltage: 300V Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current: 150nA at Room Temperature


    Original     		BAW101S 150nA OT-363 J-STD-020 MIL-STD-202, DS32177 BAW101S PDF

    K95 Package

    Abstract: No abstract text available
    Text: BAW101V HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • NEW PRODUCT • • • • • Fast Switching Speed: Maximum of 50ns High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection Two Electrically Isolated Elements in a Single Compact Package


    Original     		BAW101V 150nA OT-563 J-STD-020 DS32178 K95 Package PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification BAW101 Unit: mm Features Electrically insulated high-voltage medium-speed diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e v o lta g e P e a k re v e rs e v o lta g e F o rw a rd c u rre n t


    Original     		BAW101 PDF

    BAW101S

    Abstract: sca75 smd diode marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAW101S High voltage double diode Product specification 2003 May 13 Philips Semiconductors Product specification High voltage double diode BAW101S FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION


    Original     		MBD128 BAW101S BAW101S SCA75 613514/01/pp12 sca75 smd diode marking code PDF

    CMSD4448

    Abstract: BAS21 SOD323 CMSD2004S
    Text: Issue Number │001 June 2011 New Product Announcement High-Voltage Switching Diodes • The BAS521 and BAS521LP available in the ultra-small plastic SMD packages. • The BAW101V SOT563 features 500mW power dissipation.  The MMBD3004BRM and MMBD5004BRM


    Original     		BAS521 BAS521LP BAW101V OT563) 500mW MMBD3004BRM MMBD5004BRM MMBD5004 BAS20 BAS21, CMSD4448 BAS21 SOD323 CMSD2004S PDF

    Untitled

    Abstract: No abstract text available
    Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! ,  ,  Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified


    Original     		BAW101. BAW101 OT143 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value


    Original     		BAW101. BAW101 OT143 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAW101S N EW PRODU CT HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed: max. 50ns High Reverse Breakdown Voltage: 300V Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current: 150nA at Room Temperature


    Original     		BAW101S 150nA OT-363 J-STD-020 MIL-STD-202, DS32177 PDF

    BAW101

    Abstract: BFP181
    Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 " ! ,  ,  Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage


    Original     		BAW101. BAW101 OT143 50/60Hz, BAW101 BFP181 PDF

    smd diode K2

    Abstract: smd diode 1301 DIODE smd marking k2 transistor smd K2 smd diode JS k2 smd transistor smd transistor k2 SOT-363 marking 05 BAW101S smd JS 3
    Text: Diodes SMD Type High Voltage Double Diode BAW101S SOT-363 Unit: mm +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 +0.1 1.3-0.1 0.65 Small plastic SMD package 0.36 High switching speed: max. 50 ns +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 High continuous reverse voltage: 300 V


    Original     		BAW101S OT-363 smd diode K2 smd diode 1301 DIODE smd marking k2 transistor smd K2 smd diode JS k2 smd transistor smd transistor k2 SOT-363 marking 05 BAW101S smd JS 3 PDF

    BAW101

    Abstract: BFP181
    Text: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! ,  ,  Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified


    Original     		BAW101. BAW101 OT143 BAW101 BFP181 PDF

    BAW101S

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAW101S High voltage double diode Product specification 2003 May 13 Philips Semiconductors Product specification High voltage double diode BAW101S FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION


    Original     		MBD128 BAW101S BAW101S PDF

    Untitled

    Abstract: No abstract text available
    Text: BAW101 SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW101 consists of two electrically islolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface


    Original     		BAW101 OT-143 BAW101 35age 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Central TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR BAW101 type is a Silicon Dual Isolated High Voltage Switching diode designed for surface mount switching applications requiring high voltage capabilities. Marking Code is CJP. 94 DATA SHEETS 95


    Original     		BAW101 PDF

    marking sot-143

    Abstract: BAW101 IR marking code
    Text: Central BAW101 TM Semiconductor Corp. DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW101 consists of two electrically islolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is


    Original     		BAW101 OT-143 100mA marking sot-143 BAW101 IR marking code PDF

    BAW101

    Abstract: No abstract text available
    Text: BAW101 SURFACE MOUNT DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW101 consists of two electrically islolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface


    Original     		BAW101 BAW101 OT-143 100mA 20-November PDF

    smd jpS

    Abstract: smd JS SMD MARKING E 5 smd diode s 4 j SMD MARKING P smd ja smd transistor js BAW101 GE-250 smd JS p
    Text: Diodes SMD Type Silicon Switching Diode Array BAW101 Unit: mm Features Electrically insulated high-voltage medium-speed diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e v o lta g e P e a k re v e rs e v o lta g e


    Original     		BAW101 smd jpS smd JS SMD MARKING E 5 smd diode s 4 j SMD MARKING P smd ja smd transistor js BAW101 GE-250 smd JS p PDF

    K95 Package

    Abstract: No abstract text available
    Text: BAW101V NEW PRODUCT HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • • Fast Switching Speed: max. 50ns High Reverse Breakdown Voltage: 300V Two Electrically Isolated Elements in a Single Compact Package Low Leakage Current: 150nA at Room Temperature


    Original     		BAW101V 150nA OT-563 J-STD-020 MIL-STD-202, DS32178 K95 Package PDF

    BAW101S

    Abstract: high voltage diodes 6 pin smd diode
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BAW101S High voltage double diode Product data sheet 2003 May 13 NXP Semiconductors Product data sheet High voltage double diode BAW101S FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION


    Original     		MBD128 BAW101S BAW101S 613514/01/pp9 high voltage diodes 6 pin smd diode PDF

    Untitled

    Abstract: No abstract text available
    Text: BAW101. Silicon Switching Diode  Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value


    Original     		BAW101. BAW101 OT143 Applicati00 EHN00019 Feb-03-2003 EHB00104 PDF