DIODE L7F Search Results

marking KZ diode

Abstract: SG20TC10M
Contextual Info: Schottky Barrier Diode Twin Diode • fl- tlH S G 20T C 1OM OUTLINE Unit: mm Package ! FTO-220G Weight L54g Typ 100V 20A 4.5 Feature • Tj=1751C • Tj=175°C • Full Molded • Low Ir=30|jA • 1£ l R = 3 0 p A • Resistance for thermal run-away Main Use

FTO-220G

Abstract: SG20TC10M w134
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE S G 20T C 1 OM 100V 20A Feature • Tj=175°C • Full Molded • T j= 175°C • I5 I r= 30|jA • L o w Ir = 3 0 | j A • • Resistance for thermal run-away • Dielectric Strength 2kV U 1C < 11 • igiU ÎŒ 2kV«IŒ

Contextual Info: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without

Contextual Info: MOTOROLA O rder this docum ent by M TP9N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP9N25E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES 250 VOLTS

Contextual Info: MOTOROLA O rder this docum ent by M TP1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

Contextual Info: MOTOROLA Order this document by MTP6P20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP6P20E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high

Contextual Info: MOTOROLA O rder this docum ent by M TP3N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3N100E T M O S E-FET™ P o w e r F ield E ffe c t T ra n s is to r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

Contextual Info: MOTOROLA Order this document by MTB2P50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB2P50E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 500 VOLTS P-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA O rder this docum ent by M TB3N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N100E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA O rder this docum ent by M TB1N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB1N100E TM OS E-FET™ High Energy Pow er FET D 2 p a k for S urface Mount Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB16 N2 5 E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: Preliminary Data Sheet OMD300N06HL OMD120L60HL OMD240N10HL OMDIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules With Internal Gate Drive, Half-Bridge Configuration FEATURES • • • • •

Contextual Info: MOTOROLA O rder this docum ent by M TB3N120E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N120E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1200 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB4N80E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: OM9Q335SF Series THREE PHASE BRUSHLESS MOTOR DRIVER MODULES IN HERMETIC ISOLATED PACKAGES 60 And 100 Volt, 50 To 100 Amp MOSFET Modules, Including Gate Drive For Complete 3-Phase Brushless Motor Control FEATURES • Hermetic Isolated Metal And Ceramic Packages

Contextual Info: MOTOROLA Order this document by MTD2N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

L6281

Abstract: Stepper driver board with L297 L6203 circuit L6201P Stepper driver board with L297 L6203 L297 used for 24V/ 5A DC motor CI L297 L6203 L6203 H bridge IC L6202 L6506
Contextual Info: L6201 - L6201P L6202 - L6203 Æ 7 SG S-TH O M SO N ^ 7#. R!ôll ^©li[L[i ÏIS3©R!l] êi DMOS FULL BRIDGE DRIVER PRELIMINARY DATA . SUPPLY VOLTAGE UP TO 42V • 5A MAX PEAK CURRENT (2A max. for L6201 . TOTAL RMS CURRENT UP TO L6201:1 A; L6202:1.5A; L6203/L6201 P:4A

Contextual Info: 0M100Q05CB/RB/DB OM1ÛOQ15CB/RB/DB OM100Q30CB/RB/DB OM100Q50CB/RB/DB OM100Q70CB/RB/DB 0M100Q1OCB/RB/DB OM100Q20CB/RB/DB OM100Q40CB/RB/DB OMIOOQ6OCB/RB/DB OMIOOQ8OCB/RB/DB 100 AMP ULTRA FAST CENTER-TAP IN HERMETIC ISOLATED POWER BLOCK PACKAGE 100 Amp, 50 To 800 Volt High Power

HC 148 TRANSISTOR

Abstract: AN569 MTY14N100E
Contextual Info: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY14N 100E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high

Contextual Info: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T Y 16N 8 0 E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n

ac motor servo control circuit diagram

Abstract: C-BUS Microcontroller Interface metal detector diagram PI QFP64 SAA7345 SAA7372 TDA1301 TDA1301T qfp100 wz Biphase mark code
Contextual Info: Philips Semiconductors Preliminary specification Single-chip digital servo processor and Compact Disc decoder CD7 CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 QUICK REFERENCE DATA 4 ORDERING INFORMATION 5 BLOCK DIAGRAM 6 PINNING 7 FUNCTIONAL DESCRIPTION 7.1

d2955

Contextual Info: MOTOROLA O rder this docum ent by M TD2955E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2955E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount M o to r o la P r e fe r r e d D e v ic e P-Channel Enhancement-Mode Silicon Gate

5252 F

Abstract: 5252 F led 5252 led 5252 S OM5250SM OM5251SM OM5252SM OM5253SM OM5254SM OM5255SM
Contextual Info: OM5250SM OM5251SM OM5252SM OM5253SM OM5254SM OM5256SM OM5255SM ISOLATED SURFACE MOUNT HIGH EFFICIENCY CENTER-TAP RECTIFIER Hermetic Surface Mount Package 12 Amp, 50V to 600V, 35 to 75 nsec FEATURES Hermetic Surface Mount Package Very Low Forward Voltage Very Fast Recovery Time

1990- 2335 optocoupler

Abstract: philips 3139 147 tv tuner TDA6101Q equivalent TDA3827 tda6100 ofw g 3201 ica v94 display OFW G 3352 BB515 pj 2309 smd diode
Contextual Info: Philips S em iconductors S em ico n d u cto rs fo r Television and V id eo S ystem s Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors