marking KZ diode
Abstract: SG20TC10M
Text: Schottky Barrier Diode Twin Diode • fl- tlH S G 20T C 1OM OUTLINE Unit: mm Package ! FTO-220G Weight L54g Typ 100V 20A 4.5 Feature • Tj=1751C • Tj=175°C • Full Molded • Low Ir=30|jA • 1£ l R = 3 0 p A • Resistance for thermal run-away Main Use
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SG20TC1OM
FTO-220G
i50HzT
CJ533-1)
marking KZ diode
SG20TC10M
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PDF
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FTO-220G
Abstract: SG20TC10M w134
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE S G 20T C 1 OM 100V 20A Feature • Tj=175°C • Full Molded • T j= 175°C • I5 I r= 30|jA • L o w Ir = 3 0 | j A • • Resistance for thermal run-away • Dielectric Strength 2kV U 1C < 11 • igiU ÎŒ 2kV«IŒ
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SG20TC1OM
FTO-220G
i50HzT
CJ533-1)
FTO-220G
SG20TC10M
w134
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without
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MTP2N50E/D
21A-06
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TP9N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP9N25E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES 250 VOLTS
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TP9N25E/D
TP9N25E
21A-06
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TP1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N60E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination
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OCR Scan
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TP1N60E/D
TP1N60E
MTP1N60E/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP6P20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP6P20E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high
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OCR Scan
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MTP6P20E/D
TP6P20E
21A-06
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TP3N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3N100E T M O S E-FET™ P o w e r F ield E ffe c t T ra n s is to r Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination
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TP3N100E/D
TP3N100E
21A-06
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB2P50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB2P50E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 500 VOLTS P-Channel Enhancement-Mode Silicon Gate
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OCR Scan
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MTB2P50E/D
MTB2P50E
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB3N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N100E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TB3N100E/D
MTB3N100E
MTB3N100E/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB1N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB1N100E TM OS E-FET™ High Energy Pow er FET D 2 p a k for S urface Mount Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TB1N100E/D
MTB1N100E
MTB1N100E/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB16N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB16 N2 5 E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 16 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTB16N25E/D
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet OMD300N06HL OMD120L60HL OMD240N10HL OMDIOOF6OHL HALF-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 100 To 300 Amp Modules With Internal Gate Drive, Half-Bridge Configuration FEATURES • • • • •
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OMD300N06HL
OMD120L60HL
OMD240N10HL
b76TD73
534-5776F
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB3N120E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N120E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1200 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TB3N120E/D
MTB3N120E
In982.
418B-02
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB4N80E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate
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MTB4N80E/D
MTB4N80E
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PDF
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Untitled
Abstract: No abstract text available
Text: OM9Q335SF Series THREE PHASE BRUSHLESS MOTOR DRIVER MODULES IN HERMETIC ISOLATED PACKAGES 60 And 100 Volt, 50 To 100 Amp MOSFET Modules, Including Gate Drive For Complete 3-Phase Brushless Motor Control FEATURES • Hermetic Isolated Metal And Ceramic Packages
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OM9Q335SF
-5Q/-100
OM90335SF-30/60
OM90335SF-60A
OM90335SF-30/60/60A
00011L7
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD2N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination
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MTD2N50E/D
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PDF
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L6281
Abstract: Stepper driver board with L297 L6203 circuit L6201P Stepper driver board with L297 L6203 L297 used for 24V/ 5A DC motor CI L297 L6203 L6203 H bridge IC L6202 L6506
Text: L6201 - L6201P L6202 - L6203 Æ 7 SG S-TH O M SO N ^ 7#. R!ôll ^©li[L[i ÏIS3©R!l] êi DMOS FULL BRIDGE DRIVER PRELIMINARY DATA . SUPPLY VOLTAGE UP TO 42V • 5A MAX PEAK CURRENT (2A max. for L6201 . TOTAL RMS CURRENT UP TO L6201:1 A; L6202:1.5A; L6203/L6201 P:4A
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L6201
L6201P
L6202
L6203
L6201)
L6203/L6201
T0100
L6281
Stepper driver board with L297 L6203 circuit
Stepper driver board with L297 L6203
L297 used for 24V/ 5A DC motor
CI L297
L6203
L6203 H bridge IC
L6506
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PDF
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Untitled
Abstract: No abstract text available
Text: 0M100Q05CB/RB/DB OM1ÛOQ15CB/RB/DB OM100Q30CB/RB/DB OM100Q50CB/RB/DB OM100Q70CB/RB/DB 0M100Q1OCB/RB/DB OM100Q20CB/RB/DB OM100Q40CB/RB/DB OMIOOQ6OCB/RB/DB OMIOOQ8OCB/RB/DB 100 AMP ULTRA FAST CENTER-TAP IN HERMETIC ISOLATED POWER BLOCK PACKAGE 100 Amp, 50 To 800 Volt High Power
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0M100Q05CB/RB/DB
OQ15CB/RB/DB
OM100Q30CB/RB/DB
OM100Q50CB/RB/DB
OM100Q70CB/RB/DB
0M100Q1OCB/RB/DB
OM100Q20CB/RB/DB
OM100Q40CB/RB/DB
MIL-S-19500,
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PDF
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HC 148 TRANSISTOR
Abstract: AN569 MTY14N100E
Text: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TY14N 100E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high
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MTY14N100E/D
Speci100E
340G-02
O-264
HC 148 TRANSISTOR
AN569
MTY14N100E
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T Y 16N 8 0 E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n
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OCR Scan
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MTY16N80E/D
340G-02
O-264
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PDF
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ac motor servo control circuit diagram
Abstract: C-BUS Microcontroller Interface metal detector diagram PI QFP64 SAA7345 SAA7372 TDA1301 TDA1301T qfp100 wz Biphase mark code
Text: Philips Semiconductors Preliminary specification Single-chip digital servo processor and Compact Disc decoder CD7 CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 QUICK REFERENCE DATA 4 ORDERING INFORMATION 5 BLOCK DIAGRAM 6 PINNING 7 FUNCTIONAL DESCRIPTION 7.1
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SAA7372
7110fl2b
QCH7550
ac motor servo control circuit diagram
C-BUS Microcontroller Interface
metal detector diagram PI
QFP64
SAA7345
SAA7372
TDA1301
TDA1301T
qfp100 wz
Biphase mark code
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PDF
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d2955
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD2955E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD2955E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount M o to r o la P r e fe r r e d D e v ic e P-Channel Enhancement-Mode Silicon Gate
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TD2955E/D
MTD2955E/D
d2955
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PDF
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5252 F
Abstract: 5252 F led 5252 led 5252 S OM5250SM OM5251SM OM5252SM OM5253SM OM5254SM OM5255SM
Text: OM5250SM OM5251SM OM5252SM OM5253SM OM5254SM OM5256SM OM5255SM ISOLATED SURFACE MOUNT HIGH EFFICIENCY CENTER-TAP RECTIFIER Hermetic Surface Mount Package 12 Amp, 50V to 600V, 35 to 75 nsec FEATURES Hermetic Surface Mount Package Very Low Forward Voltage Very Fast Recovery Time
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OM5250SM
OM5252SM
OM5254SM
OM5256SM
OM5251SM
OM5253SM
OM5255SM
MIL-S-19500,
OM5254,
OM5250,
5252 F
5252 F led
5252 led
5252 S
OM5255SM
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PDF
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1990- 2335 optocoupler
Abstract: philips 3139 147 tv tuner TDA6101Q equivalent TDA3827 tda6100 ofw g 3201 ica v94 display OFW G 3352 BB515 pj 2309 smd diode
Text: Philips S em iconductors S em ico n d u cto rs fo r Television and V id eo S ystem s Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors
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OCR Scan
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BA481
SAA7197
SAA7199B
TDA4680
TDA4685
pA733C
LCD01
1990- 2335 optocoupler
philips 3139 147 tv tuner
TDA6101Q equivalent
TDA3827
tda6100
ofw g 3201
ica v94 display
OFW G 3352
BB515
pj 2309 smd diode
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PDF
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