Untitled
Abstract: No abstract text available
Text: 1N4150W-V www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • For general purpose and switching • This diode is also available in other case styles including the DO-35 case with the type
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1N4150W-V
DO-35
1N4150,
LL4150.
AEC-Q101
OD-123
GS18/10K
10K/box
GS08/3K
15K/box
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FB15R06KL4
Abstract: eupec fb15r06kl4 NTC 5e 842e3
Text: Technische Information / Technical Information FB15R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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FB15R06KL4
FB15R06KL4
eupec fb15r06kl4
NTC 5e
842e3
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smd diode a6
Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
Text: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.
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1SS304
smd diode a6
smd diode marking a6
DIODE A6
marking A6
A CLIPPER CIRCUIT APPLICATIONS
1SS304
smd transistor A6
A6 DIODE
SMD a6 Transistor
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American Microsemiconductor
Abstract: ADA1107R
Text: AMERICAN MICROSEMICONDUCTOR INC. P. 0. Box 104 Madison, New Jersey 07940 U. S. A. http://www.americanmicrosemi.com email:sales@americanmicrosemi.com ADA1107R Phone: 973 377-9566 Fax: (973) 377-3078 Switching Diode Array FEATURES • · · Dual 8 Diode Array
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ADA1107R
-550C
1500C
100mA
American Microsemiconductor
ADA1107R
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SOP-8L
Abstract: hall effect sensor 720 DIODE marking 8L SENSOR NTH 209 zener diode marking 4x AH280 410 hall 8L 05A
Text: AH280 Hall-Effect Smart Fan Driver Features General Description - On chip Hall plate - Built-in Zener diode protection for output driver - Built-in protection diode for power reverse connecting - Rotor-lock detection - Automatically restart after release of motor
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AH280
AH280
SOP-8L
hall effect sensor 720
DIODE marking 8L
SENSOR NTH 209
zener diode marking 4x
410 hall
8L 05A
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SOD-80C
Abstract: No abstract text available
Text: BAS86 Schottky barrier single diode 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device
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BAS86
OD80C
SOD-80C
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D8 marking, SOD123
Abstract: No abstract text available
Text: AZ23-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23
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AZ23-V-Series
OT-23
BZX84C,
OD-123
BZT52C
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
D8 marking, SOD123
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NX8563
Abstract: NX8563-AZ NX8563LB NX8563LF laser diode 1550 nm 160832
Text: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS 10 mW MIN NX8563 SERIES FEATURES DESCRIPTION • OUTPUT POWER: Pf = 10 mW MIN NEC's NX8563 Series are a 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
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NX8563
NX8563
14-PIN
NX8563-AZ
NX8563LB
NX8563LF
laser diode 1550 nm
160832
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Untitled
Abstract: No abstract text available
Text: LD421850 TM POW-R-BLOK Dual SCR/Diode Isolated Module 500 Amperes / 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual SCR/Diode Modules are designed for use in applications requiring phase control and isolated
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LD421850
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IMBD4148V-GS08
Abstract: No abstract text available
Text: IMBD4148-V Vishay Semiconductors Small Signal Switching Diode Features 3 • Silicon Epitaxial Planar Diodes • Fast switching diode in case SOT-23, especially suited for automatic insertion. • This diodes are also available in other case styles including: the DO-35 case
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IMBD4148-V
OT-23,
DO-35
1N4148,
LL4148,
OD-123
1N4148W-V.
AEC-Q101
2002/95/EC
2002/96/EC
IMBD4148V-GS08
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Untitled
Abstract: No abstract text available
Text: Technical Data Sheet 3mm Infrared LED , T-1 HIR204 Features ԦHigh reliability ԦHigh radiant intensity ԦPeak wavelength ӳp=850nm Ԧ2.54mm Lead spacing ԦLow forward voltage ԦPb free Descriptions ԦEVERLIGHT’s infrared emitting diode HIR204 is a high intensity diode , molded in a yellow transparent plastic
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HIR204
850nm
HIR204)
NoDIH-020-006
date07-21-2004
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TPCA8A09-H
Abstract: No abstract text available
Text: TPCA8A09-H MOSFETs Silicon N-Channel MOS U-MOS-H/Schottky Barrier Diode TPCA8A09-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Built-in a schottky barrier diode Low forward voltage: VDSF = -0.6 V (max)
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TPCA8A09-H
TPCA8A09-H
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SOT 23 marking code a6 diode
Abstract: No abstract text available
Text: BAS16-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Ultra fast switching speed • Surface mount package ideally suited for automatic insertion • High conductance • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in
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BAS16-V
AEC-Q101
2002/95/EC
2002/96/EC
OT-23
BAS16-V
BAS16-V-GS18
2011/65/EU
2002/95/EC.
SOT 23 marking code a6 diode
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lm90 14
Abstract: T11C DS200337 LM90
Text: LM90 LM90 ±3°C Accurate, Remote Diode and Local Digital Temperature Sensor with Two-Wire Interface Literature Number: SNIS126 LM90 ± 3˚C Accurate, Remote Diode and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM90 is an 11-bit digital temperature sensor with a
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SNIS126
11-bit
2N3904.
lm90 14
T11C
DS200337
LM90
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1550nm laser diode
Abstract: InGaAs Photodiode 1550nm
Text: 1550nm 2.5G Laser Diode Module C-15-002-T/R/Px-SXXXX/XXX-X Features • Laser diode with multi-quantum-well structure • Un-cooled operation at -40 to +85ºC • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode
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1550nm
C-15-002-T/R/Px-SXXXX/XXX-X
TA-NWT-000983
LUMNDS528-0703
1550nm laser diode
InGaAs Photodiode 1550nm
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laser DFB 1310nm single mode
Abstract: Receptacle LC laser diode 1310 nm fiber coupled
Text: 1310 nm MQW-DFB Laser Diode Module C-13-DFB-T/R/PX-SXXXX/XXX-X Features • Un-cooled laser diode with MQW structure • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Complies with Bellcore TA-NWT-000983
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C-13-DFB-T/R/PX-SXXXX/XXX-X
TA-NWT-000983
LUMNDS535-0703
laser DFB 1310nm single mode
Receptacle LC
laser diode 1310 nm fiber coupled
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TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304EDCP
TSC5304EDCH
O-252
75pcs
marking E11 DIODE
power transistor Ic 4A NPN to - 251
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Untitled
Abstract: No abstract text available
Text: UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection
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UC1610
UC2610
UC3610
capC1610
UC3610
100mA
030S4
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Untitled
Abstract: No abstract text available
Text: y mumt UC1611 UC3611 UNITRODE Quad Schottky Diode Array FEATURES DESCRIPTION Matched, Four-Diode Monolithic Array This four-diode array is designed for general purpose use as individual di odes or as a high-speed, high-current bridge. It is particularly useful on
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UC1611
UC3611
UC3611
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PDF
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Untitled
Abstract: No abstract text available
Text: y — IN T E G R A T E D C IR C U IT S UC1610 UC3610 UNITRODE DUAL Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection makes this
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UC1610
UC3610
UC3610
ambient40V
UC1611
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Untitled
Abstract: No abstract text available
Text: BBY 55-05W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • Very low capacitance spread
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5-05W
OT-323
T2/CT10
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PIN Photodiode side look
Abstract: TOLD9442M
Text: T O SH IB A TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9442M
35idual
PIN Photodiode side look
TOLD9442M
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Untitled
Abstract: No abstract text available
Text: TOLD9221M TO SHIBA TO SHIBA LASER DAIODE InGaAlP TOLD9221M Unit in mm Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~60°C Pin Connection VsVT 1O 9 3 LD (3ï) PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE
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OLD9221M
670nm
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Untitled
Abstract: No abstract text available
Text: GaAÄAs IRED & PHOTO-DIODE ARRAY TLP590B ¡TLP590B TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOS GATE DRIVER MOS FET GATE DRIVER U n it in mm The T O S H IB A TLP590B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo
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TLP590B
TLP590B)
TLP590B
UL1577,
E67349
510kil
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