B530C Search Results

Contextual Info: B520C - B560C 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODEL: B520C B530C B540C B550C B560C Features • · · · · · Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak

Contextual Info: B520C - B560C Green 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits B520C/B530C/B540C • Guard Ring Die Construction for Transient Protection VRRM V IO (A) VF max (V) IR max (mA) • Ideally Suited for Automated Assembly

DS13

Contextual Info: SPICE MODELS: B520C B530C B540C B550C B560C B520C - B560C 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak

B540C-13

Contextual Info: B520C - B560C 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B520C B530C B540C B550C B560C Features • · · · · · Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak

b550 transistor

Abstract: DS13012 B550 B550 transistor datasheet B520C B520C-B560C B530C B540C B550C B560C
Contextual Info: B520C - B560C 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B520C B530C B540C B550C B560C Features • · · · · Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak

Contextual Info: B520C - B560C 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B520C B530C B540C B550C B560C Features • · · · · · Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak

Contextual Info: B520C - B560C 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER SPICE MODELS: B520C B530C B540C B550C B560C Features • · · · · · Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak

DS13012

Abstract: B540C B520C B520C-B560C B530C B550C B560C B560C smc schottky DS13
Contextual Info: SPICE MODELS: B520C B530C B540C B550C B560C B520C - B560C 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak

B520C

Abstract: B520C-B560C B530C B540C B550C B560C B540C-13-F
Contextual Info: SPICE MODELS: B520C B530C B540C B550C B560C B520C - B560C 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • · · · · · Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak

B520C

Abstract: B530C B540C B550C B560C B54C
Contextual Info: LITE-ON SEMICONDUCTOR B520C thru B560C REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 5.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMC For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: B520C thru B540C REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 5.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES • For surface mounted applications SMC • Metal-Semiconductor junction with guard ring • Epitaxial construction • Very Low forward voltage drop

Contextual Info: B520C - B560C 5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features • • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 175A Peak

B520C

Abstract: B530C D0214AB LSM535 LSM540 LSM545 SK52L SK53L SK54L
Contextual Info: 5 Amp Schottky Rectifier LSM535 — Oh rATur\nr d a m r LSM545 CATHODE BAND D im . In c h e s M inim um A B C D E F G H D0215AB D0214AB .117 .260 .220 .307 .075 .380 .025 .030 Working Peak Repetitive Peak Reverse Voltage Reverse Voltage Microsemi Industry

MPS 1005

Abstract: MP2482DN MP2482 MP2482DS mp24
Contextual Info: MP2482 5A, 30V, 420kHz Step-Down Converter The Future of Analog IC Technology DESCRIPTION FEATURES The MP2482 is a monolithic step-down switch mode converter with a built in internal power MOSFET. It achieves 5A continuous output current over a wide input supply range with

HM00-01604A

Abstract: vishay capacitors 220uf 50v BI HM00 ES1D DIODE GRM44 100v CRCW060316R0 MM5Z15T1 LM4041DIM-1.2 MURATA GRM44 B530C
Contextual Info: MIC9131 Evaluation Board Micrel MIC9131 Evaluation Board High Voltage, High Speed Telecom DC to DC Controller General Description Operation Operation requires a 36-72 V 2.5Amp dc power supply. Converter current limit is set at 22 Amps. The optimum orientation of the converter is to have the high power component side facing upwards for better exposure to forced air.

SMBJ11CA

Abstract: SMBJ22A-13-F sk341 SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA SMBJ13CA B2100A
Contextual Info: DCS/PCN-1112 PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: March 9. 2009 June 7, 2009 Discrete Semiconductor Encapsulate PCN #: PCN-1112 TITLE Conversion of SMA, SMB and SMC packages to Green Encapsulate molding compound

B54C

Contextual Info: LITE ON POWER SEMICONDUCTOR B520C thru B560C REVERSE VOLTAGE - 20 to 60 Volts FORWARD CURRENT - 5.0 Amperes SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES SMC For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

smd marking 911 zener

Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Contextual Info: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.

SMBJ11CA

Abstract: SMBJ15A 13/Altium SBR10200CT SBL2035CT SBR30A50CT SMBJ130A SMBJ130CA SMBJ17A SMBJ14CA
Contextual Info: DATE: 11th March, 2011 PCN #: 2034 REV 01 on 4th August, 2011 PCN Title: Qualification of Additional Assembly and Test Site for Select SMA, SMB, SMC, and TO220AB Packaged Devices